Z. Ben Ayadi

Correction to: Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering

In the original version of this article reference (“Influence of, J. Alloy. Compd 695:697–703, 2017) was unfortunately missed and should have been included as proper citation of related work. In addition, the authors would like to make the following comments to avoid the appearance of duplicate work in these two papers.

Elaboration and characterisation of Si(p)/PS/ZnO(i)/ZnO(n) structure obtained by rf-magnetron sputtering from aerogel nanopowder target material

Al-doped zinc oxide (AZO) thin films has been grown onto p type porous silicon (PS) substrate by rf-magnetron sputtering at room temperature using aluminium (3 at%) doped nanocrystalline powder synthesised by the sol-gel method. XRD measurements show that the obtained AZO film is polycrystalline with a hexagonal wurtzite structure, preferentially orientated in the (002) crystallographic direction. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to study the film morphology. The obtained AZO film has a typical columnar structure and very smooth surface.