Z. C. Niu

Finer resolution observation and monitoring of global land cover: first mapping results with Landsat TM and ETM+ data

We have produced the first 30 m resolution global land-cover maps using Landsat Thematic Mapper (TM) and Enhanced Thematic Mapper Plus (ETM+) data. We have classified over 6600 scenes of Landsat TM data after 2006, and over 2300 scenes of Landsat TM and ETM+ data before 2006, all selected from the green season. These images cover most of the worlds land surface except Antarctica and Greenland. Most of these images came from the United States Geological Survey in level L1T (orthorectified). Four classifiers that were freely available were employed, including the conventional maximum likelihood classifier (MLC), J4.8 decision tree classifier, Random Forest (RF) classifier and support vector machine (SVM) classifier. A total of 91,433 training samples were collected by traversing each scene and finding the most representative and homogeneous samples. A total of 38,664 test samples were collected at preset, fixed locations based on a globally systematic unaligned sampling strategy. Two software tools, Global Analyst and Global Mapper developed by extending the functionality of Google Earth, were used in developing the training and test sample databases by referencing the Moderate Resolution Imaging Spectroradiometer enhanced vegetation index (MODIS EVI) time series for 2010 and high resolution images from Google Earth. A unique land-cover classification system was developed that can be crosswalked to the existing United Nations Food and Agriculture Organization (FAO) land-cover classification system as well as the International Geosphere-Biosphere Programme (IGBP) system. Using the four classification algorithms, we obtained the initial set of global land-cover maps. The SVM produced the highest overall classification accuracy (OCA) of 64.9% assessed with our test samples, with RF (59.8%), J4.8 (57.9%), and MLC (53.9%) ranked from the second to the fourth. We also estimated the OCAs using a subset of our test samples (8629) each of which represented a homogeneous area greater than 500 m × 500 m. Using this subset, we found the OCA for the SVM to be 71.5%. As a consistent source for estimating the coverage of global land-cover types in the world, estimation from the test samples shows that only 6.90% of the world is planted for agricultural production. The total area of cropland is 11.51% if unplanted croplands are included. The forests, grasslands, and shrublands cover 28.35%, 13.37%, and 11.49% of the world, respectively. The impervious surface covers only 0.66% of the world. Inland waterbodies, barren lands, and snow and ice cover 3.56%, 16.51%, and 12.81% of the world, respectively.

Object-based land cover change detection for cross-sensor images

Accurate and timely land cover change detection at regional and global scales is necessary for both natural resource management and global environmental change studies. Satellite remote sensing has been widely used in land cover change detection over the past three decades. The variety of satellites which have been launched for Earth Observation (EO) and the large volume of remotely sensed data archives acquired by different sensors provide a unique opportunity for land cover change detection. This article introduces an object-based land cover change detection approach for cross-sensor images. First, two images acquired by different sensors were stacked together and principal component analysis (PCA) was applied to the stacked data. Second, based on the Eigen values of the PCA transformation, six principal bands were selected for further image segmentation. Finally, a land cover change detection classification scheme was designed based on the land cover change patterns in the study area. An image–object classification was implemented to generate a land cover change map. The experiment was carried out using images acquired by Landsat 5 TM and IRS-P6 LISS3 over Daqing, China. The overall accuracy and kappa coefficient of the change map were 83.42% and 0.82, respectively. The results indicate that this is a promising approach to produce land cover change maps using cross-sensor images.

Single-photon-emitting diode at liquid nitrogen temperature

We report on the study of a single-photon-emitting diode at 77 K. The device is composed of InAs/GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g((2))(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g((2))(0), and provided some useful information for the future application. (c) 2008 American Institute of Physics.

Effect of InxGa1−xAs (0⩽x⩽0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands

We report the effect of InchiGa1-chiAs (0 less than or equal to chi less than or equal to0.4) capping layer on photoluminescence (PL) properties of 1.3 mum wavelength self-assembled InAs quantum islands, which are formed via depositing 3.5 monolayers (ML) InAs on GaAs (1 0 0) substrate by molecular beam epitaxy (MBE). Compared with the InchiGa1-chiAs capping layer containing a larger In mole fraction chi greater than or equal to0.2 and the GaAs capping layer (chi = 0), the InAs islands covered by the In0.1Ga0.9As layer show PL with lower emission energy, narrower full-width at half-maximum (FWHM), and quite stronger intensity. The PL peak energy and FWHM become more temperature dependent with the increase of In content in the InchiGa1-chiAs capping layer (chi greater than or equal to0.2), while the InAs islands covered by the In0.1Ga0.9As layer is much less temperature sensitive. In addition, the InAs islands covered by the In0.1Ga0.9As capping layer show room temperature PL wavelength at about 1.3 mum

Using a global reference sample set and a cropland map for area estimation in China

A technically transparent and freely available reference sample set for validation of global land cover mapping was recently established to assess the accuracies of land cover maps with multiple resolutions. This sample set can be used to estimate areas because of its equal-area hexagon-based sampling design. The capabilities of these sample set-based area estimates for cropland were investigated in this paper. A 30-m cropland map for China was consolidated using three thematic maps (cropland, forest and wetland maps) to reduce confusion between cropland and forest/wetland. We compared three area estimation methods using the sample set and the 30 m cropland map. The methods investigated were: (1) pixel counting from a complete coverage map, (2) direct estimation from reference samples, and (3) model-assisted estimation combining the map with samples. Our results indicated that all three methods produced generally consistent estimates which agreed with cropland area measured from an independent national land use dataset. Areas estimated from the reference sample set were less biased by comparing with a National Land Use Dataset of China (NLUD-C). This study indicates that the reference sample set can be used as an alternative source to estimate areas over large regions.

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs∕GaAs quantum wells

The influence of nonradiative recombination on the photoluminescence (PL) decay dynamics in GaInNAs∕GaAs quantum wells is studied by time-resolved photoluminescence under various excitation intensities. It is found that the PL decay process strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual nonexponential behavior and show a convex shape. By introducing a new parameter of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. The cw PL data further demonstrate the nonradiative recombination effect on the optical properties of GaInNAs∕GaAs quantum wells.

Surface morphology control of strained InAs∕GaAs(331)A films: From nanowires to island-pit pairs

We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable

High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector

A 1.55 mu m low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 degrees C was used as the absorption layer. Twenty- and fifteen-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 mu m. The dark current densities are 1.28x10(-7) A/cm(2) at the bias of 0 V and 3.5x10(-5) A/cm(2) at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs. (c) 2006 American Institute of Physics.

Electron spin relaxation by nuclei and holes in single InAs quantum dots

Electron spin relaxation of charged excitons X+ and X2+ are investigated by time-resolved and polarization-resolved photoluminescence spectroscopy. For X+ configuration, the electron spin relaxation shows a typical decay curve induced by hyperfine interaction with nuclei, whereas for X2+ state the electron spin relaxation is affected not only by nuclei but also by electron-hole exchange interaction, leading to a power-law time dependence.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures