Zafer Say

Enhanced Sulfur Tolerance of Ceria-Promoted NO x Storage Reduction (NSR) Catalysts: Sulfur Uptake, Thermal Regeneration and Reduction with H2(g)

SOx uptake, thermal regeneration and the reduction of SOx via H2(g) over ceria-promoted NSR catalysts were investigated. Sulfur poisoning and desulfation pathways of the complex BaO/Pt/CeO2/Al2O3 NSR system was investigated using a systematic approach where the functional sub-components such as Al2O3, CeO2/Al2O3, BaO/Al2O3, BaO/CeO2/Al2O3, and BaO/Pt/Al2O3 were studied in a comparative fashion. Incorporation of ceria significantly increases the S-uptake of Al2O3 and BaO/Al2O3 under both moderate and extreme S-poisoning conditions. Under moderate S-poisoning conditions, Pt sites seem to be the critical species for SOx oxidation and SOx storage, where BaO/Pt/Al2O3 and BaO/Pt/CeO2/Al2O3 catalysts reveal a comparable extent of sulfation. After extreme S-poisoning due to the deactivation of most of the Pt sites, ceria domains are the main SOx storage sites on the BaO/Pt/CeO2/Al2O3 surface. Thus, under these conditions, BaO/Pt/CeO2/Al2O3 surface stores more sulfur than that of BaO/Pt/Al2O3. BaO/Pt/CeO2/Al2O3 reveals a significantly improved thermal regeneration behavior in vacuum with respect to the conventional BaO/Pt/Al2O3 catalyst. Ceria promotion remarkably enhances the SOx reduction with H2(g).

Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films

In this study, we implanted N+ and N2+ ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible phase separation routes in boron carbon nitride (BCN) films. In addition, we investigated the effect of implanted C+ ions in sputter deposited amorphous boron nitride (a-BN) films. Implanted ion energies for all ion species were set at 40 KeV. Implanted films were then analyzed using x-ray photoelectron spectroscopy (XPS). The changes in the chemical composition and bonding chemistry due to ion-implantation were examined at different depths of the films using sequential ion-beam etching and high resolution XPS analysis cycles. A comparative analysis has been made with the results from sputter deposited BCN films suggesting that implanted nitrogen and carbon atoms behaved very similar to nitrogen and carbon atoms in sputter deposited BCN films. We found that implanted nitrogen atoms would ...