Zaid Al-Ars
Delft University of Technology
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Publication
Featured researches published by Zaid Al-Ars.
vlsi test symposium | 2000
Ad J. van de Goor; Zaid Al-Ars
This paper presents a notation for describing functional fault models, which may occur in memory devices. Using this notation, the space of all possible memory faults has been constructed. It has been shown that this space is infinite, and contains the currently established fault models. New fault models in this space have been identified and verified using resistive and capacitive defect injection and simulation of a DRAM model.
design, automation, and test in europe | 2001
Zaid Al-Ars; A. J. van de Goor
Fault analysis of memory devices using defect injection and simulation is becoming increasingly important as the complexity of memory faulty behavior increases. In this paper this approach is used to study the effects of opens and shorts on the faulty behavior of embedded DRAM (eDRAM) devices produced by Infineon Technologies. The analysis shows the existence of previously defined memory fault models, and establishes new ones. The paper also investigates the concept of dynamic faulty behavior and establishes its importance for memory devices. Conditions to test the newly established fault models are also given.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 2004
Said Hamdioui; Zaid Al-Ars; A. J. van de Goor; Mike Rodgers
The analysis of linked faults (LFs), which are faults that influence the behavior of each other, such that masking can occur, has proven to be a source for new memory tests, characterized by an increased fault coverage. However, many newly reported fault models have not been investigated from the point-of-view of LFs. This paper presents a complete analysis of LFs, based on the concept of fault primitives, such that the whole space of LFs is investigated and accounted for and validated. Some simulated defective circuits, showing linked-fault behavior, will be also presented. The paper establishes detection conditions along with new tests to detect each fault class. The tests are merged into a single test March SL detecting all considered LFs. Preliminary test results, based on Intel advanced caches, show that its fault coverage is high as compared with all other traditional tests and that it detects some unique faults; this makes March SL very attractive industrially.
Journal of Electronic Testing | 2003
Said Hamdioui; Zaid Al-Ars; Ad J. van de Goor; Mike Rodgers
The ever increasing trend to reduce DPM levels of memories requires tests with very high fault coverage and low cost. This paper describes an important fault class, called dynamic faults, that cannot be ignored anymore. The dynamic fault behavior can take place in the absence of the static fault behavior, for which the conventional memory tests have been constructed. The concept of dynamic fault will be established and validated for both dynamic and static Random-Access-Memories. A systematic way to develop fault models for dynamic faults will be introduced. Further, it will be shown that conventional memory tests do not necessarily detect its dynamic faulty behavior, which has been shown to exist in real designs. The paper therefore also presents new memory tests to target the dynamic fault class.
international conference on design and technology of integrated systems in nanoscale era | 2007
Laiq Hasan; Zaid Al-Ars; Stamatis Vassiliadis
Sequence alignment is one of the most important activities in bioinformatics. With the ever increasing volume of data in bioinformatics databases, the time for comparing a query sequence with the available databases is always increasing. Many algorithms have been proposed to perform and accelerate sequence alignment activities. This paper introduces a taxonomy of the various sequence alignment algorithms found in the literature, with particular emphasis on the Smith-Waterman (S-W) algorithm. The paper also provides a classification of the available hardware acceleration methods used to speed up the S-W algorithm.
IEEE Transactions on Computers | 2003
Zaid Al-Ars; A. J. van de Goor
Spot defects in memory devices are caused by imperfections in the fabrication process of these devices. In order to analyze the faulty effect of spot defects on the memory behavior, simulations have been performed on an electrical model of the memory in which the defects are injected, causing opens, shorts, or bridges. In this paper, simulation is used to analyze the faulty behavior of embedded DRAM (eDRAM) devices produced by Infineon Technologies. The paper applies the new approach of fault primitives to perform this analysis. The analysis shows the existence of most traditional memory fault models and establishes new ones. The paper also investigates the concept of dynamic faulty behavior and establishes its importance for eDRAMs. Conditions to test the newly established fault models, together with a test, are also given.
vlsi test symposium | 2002
Zaid Al-Ars; Ad J. van de Goor
Analyzing the dynamic faulty behavior in DRAMs is a severely time consuming task, because of the exponential growth of the analysis time needed with each memory operation added to the sensitizing operation sequence of the fault. In this paper, a new fault analysis approach for DRAM cell defects is presented where the total infinite space of dynamic faulty behavior can be approximated within a limited amount of analysis time. The paper also presents the analysis results for some cell defects using the new approach, in combination with detection conditions that guarantee the detection of any detectable dynamic faults in the defective cell.
Intelligent Decision Technologies | 2011
Hamid Mushtaq; Zaid Al-Ars; Koen Bertels
With the advent of modern nano-scale technology, it has become possible to implement multiple processing cores on a single die. The shrinking transistor sizes however have made reliability a concern for such systems as smaller transistors are more prone to permanent as well as transient faults. To reduce the probability of failures of such systems, online fault tolerance techniques can be applied. These techniques need to be efficient as they execute concurrently with applications running on such systems. This paper discusses the challenges involved in online fault tolerance and existing work which tackles these challenges. We classify fault tolerance into four different steps which are proactive fault management, error detection, fault diagnosis and recovery and discuss related work for each step, with focus on techniques for shared memory multicore/multiprocessor systems. We also highlight the additional difficulties in tolerating faults for parallel execution on shared memory multicore/multiprocessor systems.
Intelligent Decision Technologies | 2008
Laiq Hasan; Zaid Al-Ars; Zubair Nawaz; Koen Bertels
In this paper we adapted a novel approach for accelerating the Smith-Waterman (S-W) algorithm using Recursive Variable Expansion (RVE), which exposes extra parallelism in the algorithm, as compared to any other technique. The results demonstrate that applying the recursive variable expansion technique speeds up the performance by a factor of 1.36 to 1.41, as compared to traditional acceleration approaches at the cost of using 1.25 to 1.28 times more hardware resources.
international conference on embedded computer systems architectures modeling and simulation | 2015
Ernst Joachim Houtgast; Vlad Mihai Sima; Koen Bertels; Zaid Al-Ars
We present the first accelerated implementation of BWA-MEM, a popular genome sequence alignment algorithm widely used in next generation sequencing genomics pipelines. The Smith-Waterman-like sequence alignment kernel requires a significant portion of overall execution time. We propose and evaluate a number of FPGA-based systolic array architectures, presenting optimizations generally applicable to variable length Smith-Waterman execution. Our kernel implementation is up to 3× faster, compared to software-only execution. This translates into an overall application speedup of up to 45%, which is 96% of the theoretically maximum achievable speedup when accelerating only this kernel.