Zairi Ismael Rizman

Characterization of a submicron PMOS in mixer circuits

In this paper, we investigate the properties of a submicron pMOS with a single layer of metallization. The fabrication process and electrical characterization of the device were simulated using the SILVACO TCAD tools. We have applied constant field scaling on the effective channel length, the density of ion implantation for threshold voltage adjustment, and gate oxide thickness. To suppress short channel effects, we have also applied retrograde well implantation, Shallow Trench Isolation (STI), sidewall spacer deposition, silicide formation, and Lightly Doped Drain implantation in our process simulation. We have validated the electrical performance of the device by plotting and analyzing the ID - Vg relationship

Performance analysis of 22 nm deep submicron NMOS transistors

We present the design and analysis of 22 nm deep submicron indium gallium nitride InGaN and silicon Si NMOS transistors. The results show that the saturation and breakdown behavior of the InGaN transistor is significantly higher than that of its silicon Si counterpart. Our analysis suggests that InGaN could be a better alternative substrate material in the design and fabrication of transistors, as the size of the channel approaches the mean free path of the carriers.