Zempei Kawazu

Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure

The high-power operation of the lateral mode stabilized 780-nm AlGaAs laser diode (LD) with the window-mirror structure has been achieved. The stable lateral mode operation up to 250 mW is realized. This is the highest power record among the narrow stripe LDs with the wavelength of 780 nm. This LD is suitable for the next generation high-speed (16-24/spl times/) CD-R/RW drives needing 200 mW class LDs.

Zn diffusion in Ruthenium doped InP with annealing by Metalorganic Vapor Phase Epitaxy

Ruthenium (Ru) as the semi-insulated doping material for InP has good characteristics in terms of the capacitance and heat dissipation of the current blocking layer for Laser Diodes. However unintentional Zn diffusion from adjacent p-InP into Ru-InP causes the degradation of Laser characteristics such as the output power. In this paper, we fabricated p-InP/Ru-InP/pInP (p/Ru/p-InP) structure by Metalorganic Vapor Phase Epitaxy (MOVPE) and analyzed the behavior of Zn diffusion from Zn-InP into Ru-InP after annealing by SIMS measurement.

Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration

We investigated the Zn concentration dependence of Zn diffusion from Zn-doped InP (Zn-InP) to Ru-doped InP (Ru-InP). As semi-insulated InP, Ru-InP shows advantages in terms of higher resistivity and lower capacitance when Ru-InP is sandwiched by Zn-InP. Control of the diffusion of Zn from the adjacent Zn-InP layer is required to achieve laser diodes with superior characteristics. In this paper, we examined the diffusion of Zn at a Ru-InP stacking structure sandwiched by Zn-InP using metal-organic vapor phase epitaxy.

Diodes with window-mirror structure

The high power operation of the lateral mode stabilized 785nm AlGaAs LD with the window-mirror structure has been demonstrated. The stable lateral mode operation up to 250mW (kink level of 280 mW) is realized. To the best our knowledge, this is the highest power record among the narrow stripe LDs with a wavelength of 785 nm and is suitable for CD ROM disc drives.