Zh. I. Alferov

Room temperature 637-nm Ga-In-As-P injection laser

Separate-confinement AlGaAs/GaAs heterostructure lasers fabricated by a modified method of liquid-phase epitaxy (l sub t = 260 A/sq cm, lambda = 0.86-0.83 micron, T = 300 K)

200-W solar photoelectric system based on AlGaAs heterostructure solar cells and mirror concentrators

Heterostructure spectrum converter with heat sinks in a system for pumping Nd:YAG lasers

Radiation converting heterostructures with heat release in the pumping systems of solid-state Nd/3+/-doped YAG lasers

Photocells with intermediate conversion of radiation and which operate at an increased concentration /2500-fold/ of solar radiation

Heterostructure Ga-In-As-P injection laser operating at 300 K and a wavelength of 637 nm

High-power electroluminescent diodes with two heterojunctions of the AlAs-GaAs system

Ga-In-As-P heterolasers emitting in the red band

Possibility of increasing the pulse power of a YAG:Nd3/+/ laser with semiconductor pump