Zhang Fu-jia

Pd/Zn/Pd ohmic contacts to p-type GaP

Low resistance ohmic contacts have been fabricated and analyzed to Zn-doped p-type Gap using an annealed Pd/Zn/Pd metalization. It has been found that the Pd/Zn/Pd multilayer structure shows good ohmic characteristics after heat treatment. The results show that the alloying temperature and alloying time are the important factors for the quality of the ohmic contact layer. When the surface hole concentration of the p-type Gap is 2 x 10(17) cm(-3), a specific contact resistance of 6 x 10(-5) Omega cm(2) has been obtained at the optimum alloying temperature of 550 degrees C and the optimum alloying time of 3 min

Numerical analysis of the mechanism of carrier transport in organic light-emitting devices

The mechanism of carrier transport in organic light-emitting devices is numerically studied, on the basis of trapped-charge-limited conduction with an exponential trap distribution. The spatial distributions of the electrical potential, field and carrier density in the organic layer are calculated and analysed. Most carriers are distributed near the two electrodes, only a few of them are distributed over the remaining part of the organic layer. The carriers are accumulated near the electrodes and the remaining region is almost exhausted of carriers. When the characteristic energy of trap distribution is greater than 0.3 eV, it leads to a reduction of current density. In order to improve the device efficiency, organic materials with minor traps and low characteristic energy should be chosen. The diffusion current is the dominant component near the injection electrode, whereas the drift current dominates the remaining region of the organic layer.

Thin film design for advanced thermochromic smart radiator devices

This paper describes the research on the materials and design methods for advanced smart radiator devices (SRDs) on large-area flexible substrates utilized on spacecraft. The functional material is thermochromic vanadium dioxide. The coating design of SRD is similar to the design of broadband filter coatings in a mid-infrared region. The multilayer coatings have complex structures. Coating materials must be highly transparent in a required spectrum region and also mechanically robust enough to endure the influence from the rigorous environments of outer space. The number of layers must be very small, suitable for the deposition on large-area flexible substrates. All the coatings are designed initially based on optical calculation and practical experience, and then optimized by the TFCALC software. Several designs are described and compared with each other. The results show that the emittance variability of the designed SRDs is great than 400%, more advanced than the reported ones.

Numerical investigations on the current conduction in bilayer organic light-emitting devices with ohmic injection of charge carriers

A numerical model for bilayer organic light-emitting diodes (OLEDs) has been developed on the basis of trapped charge limited conduction. The dependences of the current density on the operation voltage, the thickness and trap properties of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode have been numerically investigated. It has been found that, for given values of reduced trap depth, total trap density and carrier mobility of HTL and EML, there exists an optimum thickness ratio of HTL to the sum of HTL and EML, by which a maximal current density and hence maximal quantum efficiency and luminance, can be achieved. The current density decreases quickly with the mean trap density and decreases nearly exponentially with the mean reduced trap depth.

Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors

A comprehensive understanding of the organic semiconductor material pentacene is meaningful for organic field-effect transistors (OFETs). Thin films of pentacene are the most mobile molecular films known to date. This paper reported that the pentacene sample was successfully synthesized. The purity of pentacene is up to 95%. The results of a joint experimental investigation based on a combination of infrared absorption spectra, mass spectra (MS), element analysis, x-ray diffraction (XRD) and atom force microscopy (AFM). The authors fabricated OFET with the synthesized pentacene. Its field effect mobility is about 1.23 cm2/(Vs) and on-off ratio is above 106.

Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer

The organic field effect transistors had been fabricated using the pentacene by vacuum evaporation as the active layer, the polyimide by spin coating as insulator layer, and aluminum by vacuum evaporation as gate, source and drain electrodes respectively. The field-effect mobility of 0.079 cm2/V.s was tested at Vds=70 V, and on/off radio up to 1.7×104.

Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy

Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy . At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes (OLEDs).

Deposition of carbon nitride films for space application

Carbon nitride thin films were prepared by electron-beam evaporation assisted with nitrogen ion bombardment and TiN/CNx composite films were by unbalanced dc magnetron sputtering, respectively. It was found that the sputtered films were better than the evaporated films in hardness and adhesion. The experiments of atomic oxygen action, cold welding, friction and wearing were emphasized, and the results proved that the sputtered TiN/CNx composite films were suitable for space application.

Low-Temperature (< 100°C) Poly-Si Thin Film Fabrication on Glass

Polycrystalline silicon (poly-Si) thin-film is fabricated on Al-coated planar glass substrates at the temperature below 100 °C, using aluminium-induced crystallized (AIC) amorphous silicon (a-Si) deposited by dc-magnetron sputtering under an electric field. The properties of NA poly-Si films (AIC of dc-magnetron sputtered silicon non-annealing) are characterized by Raman spectroscopy and x-ray diffraction (XRD) spectroscopy. A narrow and symmetrical Raman peak at a wave number of about 521 cm−1 is observed for samples, showing that the films are fully crystallized. XRD spectra reveal that the films are preferentially (111) oriented. Furthermore, the XRD spectrum of the sample prepared without electric field does not show any XRD peaks for poly-Si, which only appears at about 38° for Al (111) orientation. It is indicated that the electric field plays an important role in crystallization of poly-Si during the dc-magnetron sputtering. Thus, high quality poly-Si film can be obtained at low temperature and separate post-deposition step of AIC of a-silicon can be avoided.