Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Zhang Lian is active.

Publication


Featured researches published by Zhang Lian.


china international forum on solid state lighting | 2016

Normally-off recessed MOS-gate AlGaN/GaN HEMTs with over +4V saturation drain current density and a 400V breakdown voltage

Cheng Zhe; Zhang Yun; Zhang Lian; Zhao Yongbing; Wang Junxi; Li Jinmin

Owing to outstanding properties of two-dimensional electron gas (2DEG) and GaN-base material, such as high electron mobility and high critical electric field, AlGaN/GaN high electron mobility transistors (HEMTs) have been considered as the next-generation power semiconductor devices with high power conversion efficiency, high switching frequency and high-temperature operation capability. For power switching applications, enhancement mode (e-mode, or say normally-off) transistors are desired for fail-safe operation and silicon-compatible gate drive circuit. However, e-mode operation is difficult for AlGaN/GaN-based HEMTs because of the natural existence of 2DEG. To achieve e-mode operation, several approaches have been reported, including gate recess structure, fluorine plasma ion implantation, p-type gate structure and selective channel regrowth, etc. This paper reports normally-off AlGaN/GaN HEMTs with a recessed MOS-gate. After mesa isolation and Source and drain metal, the gate recess process used inductively coupled plasma (ICP). In order to avoid severe etching damage and obtain high drain current density, etching power was carefully optimized. The etching rate is slow for accurate etching depth control to leverage the current density and threshold voltage. After that, an O2 plasma treatment was applied using a plasma asher to oxidize the damaged semiconductor surface. The oxide layer was then removed in HCl: DI-water (1: 3). The next step is an atomic layer deposition (ALD) of Al2O3 as the gate dielectric to increase the breakdown voltage. Follow after that, gate metal and pad metal. By the process, our team made three kinds of HEMTs with different recessed gate depths. The first one, which has been report before, exhibits a high threshold voltage of +4.6V, a specific on-resistance of 4mΩ-cm⁁2 and a drain current density of 108 mA/mm. This paper will show the others fabricated in the later researches. The device transfer curves show that this normally-off recessed MOS-gate AlGaN/GaN HEMTs exhibit threshold voltage of +0.9V and +2.1V, respectively. Additionally, the specific on-resistance and saturation drain current density of the device with 0.9V threshold voltage are 2.26mΩ-cm⁁2 and 326mA/mm, while 2.1V-Threshold Voltage-device are 3.03mΩcm⁁2 and 173mA/mm. Both of the two HEMTs have a breakdown voltage over 400V.


Archive | 2013

UV LED multiple quantum well structure device capable of regulating and controlling energy band and growing method

Zhang Lian; Zeng Jianping; Wei Tongbo; Yan Jianchang; Wang Junxi; Li Jinmin


Archive | 2013

Energy band adjustable light-emitting diode (LED) quantum well structure

Zhang Lian; Zeng Jianping; Lu Hongxi; Wang Junxi; Li Jinmin


Archive | 2014

GaN-based HEMT structure with polarized induction doped high-resistance layer and growing method of GaN-based HEMT structure

Zhang Lian; Zhang Yun; Yan Jianchang; Wang Junxi; Li Jinmin


Archive | 2014

Method for producing multi-chip LED (light-emitting diode) package

Zhang Lian; Xie Haizhong; Yang Hua; Li Jing; Wang Junxi; Li Jinmin


Archive | 2017

On-metal monocrystal nitride film preparation method and bulk acoustic wave resonator

Sun Lili; Zhang Yun; Cheng Zhe; Zhang Lian; Wang Junxi; Li Jinmin


Archive | 2017

Monocrystal sound wave device and manufacture method therefor

Sun Lili; Zhang Yun; Yang Shuai; Cheng Zhe; Zhang Lian; Lyu Hongrui; Wang Junxi; Li Jinmin


Archive | 2017

Bulk acoustic wave device preparation method

Sun Lili; Zhang Yun; Cheng Zhe; Zhang Lian; Wang Junxi; Li Jinmin


Archive | 2016

Enhanced-mode high electron mobility transistor, preparation method thereof, and semiconductor device

Huang Yuliang; Cheng Zhe; Zhang Lian; Zhang Yun; Wang Junxi; Li Jinmin


Archive | 2016

High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/ GaN HEMT with Large Gate Swing

Yi Xiaoyan; Huang Yuliang; Zhang Yun; Cheng Zhe; Zhao Yongbing; Liu Zhiqiang; Li Jinmin; Zhang Lian; Wang Guohong

Collaboration


Dive into the Zhang Lian's collaboration.

Top Co-Authors

Avatar

Li Jinmin

Chinese Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

Wang Junxi

Chinese Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

Zhang Yun

Chinese Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

Cheng Zhe

Chinese Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

Wei Tongbo

Chinese Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

Zhao Yongbing

Chinese Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

Feng Xiang-Xu

Chinese Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

Li Jing

Beijing Jiaotong University

View shared research outputs
Top Co-Authors

Avatar

Liu Naixin

Chinese Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

Lu Hongxi

Chinese Academy of Sciences

View shared research outputs
Researchain Logo
Decentralizing Knowledge