Zhaowen Fan

11.4: A Novel Shadow Mask PDP with High Luminance and Contrast

An improved AC PDP with shadow mask SMPDP is presented in this paper. The manufacture cost of SMPDP can be reduced significantly by replacing the normal dielectric rib with shadow mask. A 14″ full color SM-PDP 240×RGB×180 prototype TV set has been made. High luminance with 550cd/m2 and high contrast over 5000:1 have been achieved by applying high Xe content and True Black driving scheme.

25.3: Concept of a Carbon‐Nanotube FED with a Normally on Driving Under‐Gate Structure

The structure and working principle of a normally on driving under-gate FED are presented in this paper. Different from traditional under-gate driving scheme, field emission electrons are pulled out from cathode by anode voltage, and restrained by negative gate voltage. The electric field inside the emission region was calculated by finite element method. The emission property of the cathode was also studied by numerical calculation method. The results indicated that a uniform and large emission area could be obtained in this new under-gate FED. The study may provide a powerful theoretic support for the feasibility of this new kind under-gate FED. This normally on driving under-gate FED achieves large emission area, notable emission uniformity, high luminance efficacy and high anode voltage.

P-89: Influence of Sustaining Frequency on the Discharge of Shadow Mask PDP

The influence of sustaining frequency on the discharge of Shadow Mask PDP (SM-PDP) is been investigated by both experiments and two dimensional simulations. The ratio of VIS/IR and Efficacy/(VIS/IR) is used to illustrate the xenon excitation efficiency and electron heating efficiency respectively. It can be seen from the simulations that the decrease of efficacy in high sustaining frequency is the result of long life xenon metastables relative to the repetition rate, cannot convert into xenon excimer efficiently and therefore a lower value of the overall discharge efficiency.

Development of a 25‐in. SVGA SMPDP

— A newly developed 25-in. SVGA ACPDP containing a shadow mask (SMPDP) is presented. Some modifications have been introduced into the fabrication technique. Instead of using conventional Ag in a thick-film process, an aluminum bus electrode without ITO was fabricated on the front substrate, which was made by using a thin-film process. Due to this improvement, excellent uniformity of the dielectric layer has been achieved. Only five necessary process steps are required during the manufacturing process of the front/rear substrates for the SMPDP. The panel capacitance was reduced by over 20% by adopting an ITO-less structure, which enables high-speed addressing for large-capacity displays. The color purity was improved by applying a high Xe content.