Zhaozhu Yang

Synthesis of Large-scale GaN Nanowires by Ammoniating Ga2O3/V Films

Abstract Large-scale GaN nanowires were synthesized on Si(111) substrates through ammoniating Ga2O3/V films. The as-grown products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results reveal that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 20 nm to 60 nm and lengths of about several tens of micrometers. The results of HRTEM and selected-area electron diffraction (SAED) show that the nanowires are pure hexagonal GaN single crystal. The photoluminescence (PL) spectrum indicates that the GaN nanowires have good emission property. The growth mechanism is discussed briefly.

Influence of Different Ammoniating Time on Tb-Catalyzed GaN Nanorods

A novel rare earth metal seed is employed as a catalyst for the growth of GaN nanorods. Large-scale GaN nanorods have been successfully synthesized through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates, ammoniating time is changed to study its influence on GaN nanorods. The samples are characterized with scanning electron microscopy, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectrum. The results demonstrate that the nanorods are single crystal hexagonal wurtzite GaN, whose diameter increases gradually with the rise of ammoniating time. The nanorods possess good optical properties. The growth mechanism of GaN nanorods is also discussed.