Zhefeng Li

Conversion process of the dominant electroluminescence mechanism in a molecularly doped organic light-emitting device with only electron trapping

In this work, the detailed conversion process of the dominant electroluminescence (EL) mechanism in a device with Eu(TTA)3phen (TTA=thenoyltrifluoroacetone, phen=1,10-phenanthroline) doped CBP (4,4′-N,N′-dicarbazole-biphenyl) film as the emitting layer was investigated by analyzing the evolution of carrier distribution on dye and host molecules with increasing voltage. Firstly, it was confirmed that only electrons can be trapped in Eu(TTA)3phen doped CBP. As a result, holes and electrons would be situated on CBP and Eu(TTA)3phen molecules, respectively, and thus creates an unbalanced carrier distribution on both dye and host molecules. With the help of EL and photoluminescence spectra, the distribution of holes and electrons on both Eu(TTA)3phen and CBP molecules was demonstrated to change gradually with increasing voltage. Therefore, the dominant EL mechanism in this device changes gradually from carrier trapping at relatively low voltage to Forster energy transfer at relatively high voltage.

Mechanisms of efficiency enhancement in the doped electroluminescent devices based on a europium complex

In this study, we investigated the dependence of electroluminescence (EL) efficiency on carrier distribution in the light-emitting layer (EML) of the device based on Eu(TTA)3phen (TTA=thenoyltrifluoroacetone, phen=1,10-phenanthroline) doped 4,4′-N,N′-dicarbazole-biphenyl (CBP) system. We found that EL efficiency increases monotonously with increasing hole injection even when holes are the majority carriers. This phenomenon was attributed to the accumulation of holes in EML, which improves the balance of holes and electrons on Eu(TTA)3phen molecules, thus enhancing the EL efficiency. To further improve the balance of holes and electrons on Eu(TTA)3phen molecules, the injection of electron was gently decreased by modulating the thickness of Al and LiF layers. Interestingly, EL efficiency increases gradually to a maximum and then decreases rapidly with decreasing electron injection. As a result, the device with 80 nm Al and 1.2 nm LiF obtained the maximal current efficiency of 9.53 cd/A, power efficiency of ...

Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures

The fundamental relationship between excitonic photoluminescence(PL) intensity and excitation intensity in semiconductorquantum well structures is developed. This relationship is further simplified in the regime of low excitation, and used for a fit function of the Arrhenius plot of time-integrated PL intensity. The proposed four fit parameters are definitely correlated to the distinct characteristic quantities of the sample material, which are the binding energy of excitons, the activation energy, the scattering time, and the background concentration in the well. The validity of the model has been confirmed using our experiments.