Zhen-Fei Liu

Single-molecule diodes with high rectification ratios through environmental control.

Molecular electronics aims to miniaturize electronic devices by using subnanometre-scale active components. A single-molecule diode, a circuit element that directs current flow, was first proposed more than 40 years ago and consisted of an asymmetric molecule comprising a donor-bridge-acceptor architecture to mimic a semiconductor p-n junction. Several single-molecule diodes have since been realized in junctions featuring asymmetric molecular backbones, molecule-electrode linkers or electrode materials. Despite these advances, molecular diodes have had limited potential for applications due to their low conductance, low rectification ratios, extreme sensitivity to the junction structure and high operating voltages. Here, we demonstrate a powerful approach to induce current rectification in symmetric single-molecule junctions using two electrodes of the same metal, but breaking symmetry by exposing considerably different electrode areas to an ionic solution. This allows us to control the junctions electrostatic environment in an asymmetric fashion by simply changing the bias polarity. With this method, we reliably and reproducibly achieve rectification ratios in excess of 200 at voltages as low as 370 mV using a symmetric oligomer of thiophene-1,1-dioxide. By taking advantage of the changes in the junction environment induced by the presence of an ionic solution, this method provides a general route for tuning nonlinear nanoscale device phenomena, which could potentially be applied in systems beyond single-molecule junctions.

Reliable Energy Level Alignment at Physisorbed Molecule–Metal Interfaces from Density Functional Theory

A key quantity for molecule–metal interfaces is the energy level alignment of molecular electronic states with the metallic Fermi level. We develop and apply an efficient theoretical method, based on density functional theory (DFT) that can yield quantitatively accurate energy level alignment information for physisorbed metal–molecule interfaces. The method builds on the “DFT+Σ” approach, grounded in many-body perturbation theory, which introduces an approximate electron self-energy that corrects the level alignment obtained from conventional DFT for missing exchange and correlation effects associated with the gas-phase molecule and substrate polarization. Here, we extend the DFT+Σ approach in two important ways: first, we employ optimally tuned range-separated hybrid functionals to compute the gas-phase term, rather than rely on GW or total energy differences as in prior work; second, we use a nonclassical DFT-determined image-charge plane of the metallic surface to compute the substrate polarization term, rather than the classical DFT-derived image plane used previously. We validate this new approach by a detailed comparison with experimental and theoretical reference data for several prototypical molecule–metal interfaces, where excellent agreement with experiment is achieved: benzene on graphite (0001), and 1,4-benzenediamine, Cu-phthalocyanine, and 3,4,9,10-perylene-tetracarboxylic-dianhydride on Au(111). In particular, we show that the method correctly captures level alignment trends across chemical systems and that it retains its accuracy even for molecules for which conventional DFT suffers from severe self-interaction errors.

Charge density wave order in 1D mirror twin boundaries of single-layer MoSe2

A scanning tunnelling microscopy study demonstrates that one-dimensional charge density waves can form at twin boundaries in a monolayer transition metal dichalcogenide.

Dirac line nodes and effect of spin-orbit coupling in the nonsymmorphic critical semimetals MSiS (M = Hf, Zr)

Topological Dirac semimetals (TDSs) represent a new state of quantum matter recently discovered that offers a platform for realizing many exotic physical phenomena. A TDS is characterized by the linear touching of bulk (conduction and valance) bands at discrete points in the momentum space [i.e., three-dimensional (3D) Dirac points], such as in Na3Bi and Cd3As2. More recently, new types of Dirac semimetals with robust Dirac line nodes (with nontrivial topology or near the critical point between topological phase transitions) have been proposed that extend the bulk linear touching from discrete points to one-dimensional (1D) lines. In this paper, using angle-resolved photoemission spectroscopy (ARPES), we explored the electronic structure of the nonsymmorphic crystals MSiS (M = Hf, Zr). Remarkably, by mapping out the band structure in the full 3D Brillouin zone (BZ), we observed two sets of Dirac line-nodes in parallel with the k(z) axis and their dispersions. Interestingly, along directions other than the line nodes in the 3D BZ, the bulk degeneracy is lifted by spin-orbit coupling (SOC) in both compounds with larger magnitude in HfSiS. Our paper not only experimentally confirms a new Dirac line-node semimetal family protected by nonsymmorphic symmetry but also helps understanding and further exploring the exotic properties, as well as practical applications of the MSiS family of compounds.

Detection of sub-MeV dark matter with three-dimensional Dirac materials

We propose the use of three-dimensional Dirac materials as targets for direct detection of sub-MeV dark matter. Dirac materials are characterized by a linear dispersion for low-energy electronic excitations, with a small band gap of O(meV) if lattice symmetries are broken. Dark matter at the keV scale carrying kinetic energy as small as a few meV can scatter and excite an electron across the gap. Alternatively, bosonic dark matter as light as a few meV can be absorbed by the electrons in the target. We develop the formalism for dark matter scattering and absorption in Dirac materials and calculate the experimental reach of these target materials. We find that Dirac materials can play a crucial role in detecting dark matter in the keV to MeV mass range that scatters with electrons via a kinetically mixed dark photon, as the dark photon does not develop an in-medium effective mass. The same target materials provide excellent sensitivity to absorption of light bosonic dark matter in the meV to hundreds of meV mass range, superior to all other existing proposals when the dark matter is a kinetically mixed dark photon.

Mapping the Transmission Functions of Single-Molecule Junctions

Charge transport phenomena in single-molecule junctions are often dominated by tunneling, with a transmission function dictating the probability that electrons or holes tunnel through the junction. Here, we present a new and simple technique for measuring the transmission functions of molecular junctions in the coherent tunneling limit, over an energy range of 1.5 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different exposed areas, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junction Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junctions transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed from first principles. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.

Distinctive orbital anisotropy observed in the nematic state of a FeSe thin film

Nematic state, where the system is translationally invariant but breaks the rotational symmetry, has drawn great attentions recently due to experimental observations of such a state in both cuprates and iron-based superconductors. The mechanism of nematicity that is likely tied to the pairing mechanism of high-Tc, however, still remains controversial. Here, we studied the electronic structure of multilayer FeSe film by angle-resolved photoemission spectroscopy (ARPES). We found that the FeSe film enters the nematic state around 125 K, while the electronic signature of long range magnetic order has not been observed down to 20K indicating the non-magnetic origin of the nematicity. The band reconstruction in the nematic state is characterized by the splitting of the dxz and dyz bands. More intriguingly, such energy splitting is strong momentum dependent with the largest band splitting of ~80meV at the zone corner. The simple on-site ferro-orbital ordering is insufficient to reproduce the nontrivial momentum dependence of the band reconstruction. Instead, our results suggest that the nearest-neighbor hopping of dxz and dyz is highly anisotropic in the nematic state, the origin of which holds the key in understanding the nematicity in iron-based superconductors.

Energy level alignment at molecule-metal interfaces from an optimally tuned range-separated hybrid functional

The alignment of the frontier orbital energies of an adsorbed molecule with the substrate Fermi level at metal-organic interfaces is a fundamental observable of significant practical importance in nanoscience and beyond. Typical density functional theory calculations, especially those using local and semi-local functionals, often underestimate level alignment leading to inaccurate electronic structure and charge transport properties. In this work, we develop a new fully self-consistent predictive scheme to accurately compute level alignment at certain classes of complex heterogeneous molecule-metal interfaces based on optimally tuned range-separated hybrid functionals. Starting from a highly accurate description of the gas-phase electronic structure, our method by construction captures important nonlocal surface polarization effects via tuning of the long-range screened exchange in a range-separated hybrid in a non-empirical and system-specific manner. We implement this functional in a plane-wave code and...

Communication: Energy-dependent resonance broadening in symmetric and asymmetric molecular junctions from an ab initio non-equilibrium Green's function approach

The electronic structure of organic-inorganic interfaces often features resonances originating from discrete molecular orbitals coupled to continuum lead states. An example is molecular junction, individual molecules bridging electrodes, where the shape and peak energy of such resonances dictate junction conductance, thermopower, I-V characteristics, and related transport properties. In molecular junctions where off-resonance coherent tunneling dominates transport, resonance peaks in the transmission function are often assumed to be Lorentzian functions with an energy-independent broadening parameter Γ. Here we define a new energy-dependent resonance broadening function, Γ(E), based on diagonalization of non-Hermitian matrices, which can describe resonances of a more complex, non-Lorentzian nature and can be decomposed into components associated with the left and right leads, respectively. We compute this quantity via an ab initio non-equilibrium Greens function (NEGF) approach based on density functional theory (DFT) for both symmetric and asymmetric molecular junctions, and show that our definition of Γ(E), when combined with Breit-Wigner formula, reproduces the transmission calculated from DFT-NEGF. Through a series of examples, we illustrate how this approach can shed new light on experiments and understanding of junction transport properties in terms of molecular orbitals.

Parameter-free driven Liouville-von Neumann approach for time-dependent electronic transport simulations in open quantum systems

A parameter-free version of the recently developed driven Liouville-von Neumann equation [T. Zelovich et al., J. Chem. Theory Comput. 10(8), 2927–2941 (2014)] for electronic transport calculations in molecular junctions is presented. The single driving rate, appearing as a fitting parameter in the original methodology, is replaced by a set of state-dependent broadening factors applied to the different single-particle lead levels. These broadening factors are extracted explicitly from the self-energy of the corresponding electronic reservoir and are fully transferable to any junction incorporating the same lead model. The performance of the method is demonstrated via tight-binding and extended Huckel calculations of simple junction models. Our analytic considerations and numerical results indicate that the developed methodology constitutes a rigorous framework for the design of “black-box” algorithms to simulate electron dynamics in open quantum systems out of equilibrium.