Zhengtang Luo

Intrinsic Response of Graphene Vapor Sensors

Graphene is a two-dimensional material with extremely favorable chemical sensor properties. Conventional nanolithography typically leaves a resist residue on the graphene surface, whose impact on the sensor characteristics has not yet been determined. Here we show that the contamination layer chemically dopes the graphene, enhances carrier scattering, and acts as an absorbent layer that concentrates analyte molecules at the graphene surface, thereby enhancing the sensor response. We demonstrate a cleaning process that verifiably removes the contamination on the device structure and allows the intrinsic chemical responses of the graphene monolayer to be measured. These intrinsic responses are surprisingly small, even upon exposure to strong analytes such as ammonia vapor.

DNA Translocation through Graphene Nanopores

We report on DNA translocations through nanopores created in graphene membranes. Devices consist of 1-5 nm thick graphene membranes with electron-beam sculpted nanopores from 5 to 10 nm in diameter. Due to the thin nature of the graphene membranes, we observe larger blocked currents than for traditional solid-state nanopores. However, ionic current noise levels are several orders of magnitude larger than those for silicon nitride nanopores. These fluctuations are reduced with the atomic-layer deposition of 5 nm of titanium dioxide over the device. Unlike traditional solid-state nanopore materials that are insulating, graphene is an excellent electrical conductor. Use of graphene as a membrane material opens the door to a new class of nanopore devices in which electronic sensing and control are performed directly at the pore.

High yield preparation of macroscopic graphene oxide membranes.

Graphene oxide membranes up to 2000 microm(2) in size can be synthesized with 90% yield in bulk quantities through a microwave-assisted chemical method. Membranes are readily visualized on an oxidized silicon substrate, which enables efficient fabrication of electronic devices and sensors. Field effect transistors made of the membrane show ambipolar behavior, and their conductivity is significantly higher than previously reported values.

Photoluminescence and band gap modulation in graphene oxide

We report broadband visible photoluminescence from solid graphene oxide, and modifications of the emission spectrum by progressive chemical reduction. The data suggest a gapping of the two-dimensional electronic system by removal of π-electrons. We discuss possible gapping mechanisms, and propose that a Kekule pattern of bond distortions may account for the observed behavior.

Turning off Hydrogen To Realize Seeded Growth of Subcentimeter Single-Crystal Graphene Grains on Copper

Subcentimeter single-crystalline graphene grains, with diameter up to 5.9 mm, have been successfully synthesized by tuning the nucleation density during atmospheric pressure chemical vapor deposition. Morphology studies show the existence of a single large nanoparticle (>~20 nm in diameter) at the geometric center of those graphene grains. Similar size particles were produced by slightly oxidizing the copper surface to obtain oxide nanoparticles in Ar-only environments, followed by reduction into large copper nanoparticles under H2/Ar environment, and are thus explained to be the main constituent nuclei for graphene growth. On this basis, we were able to control the nanoparticle density by adjusting the degree of oxidation and hydrogen annealing duration, thereby controlling nucleation density and consequently controlling graphene grain sizes. In addition, we found that hydrogen plays dual roles on copper morphology during the whole growth process, that is, removing surface irregularities and, at the same time, etching the copper surface to produce small nanoparticles that have only limited effect on nucleation for graphene growth. Our reported approach provides a highly efficient method for production of graphene film with long-range electronic connectivity and structure coherence.

Growth mechanism of hexagonal-shape graphene flakes with zigzag edges.

The properties of a graphene nanostructure are strongly influenced by the arrangement of the atoms on its edge. Growing graphene nanostructures with specified edge types in practical, scalable ways has proven challenging, with limited success to date. Here we report a method for producing graphene flakes with hexagonal shape over large areas, by a brief chemical vapor deposition growth at atmospheric pressure on polished Cu catalyst foil, with limited carbon feedstock. Raman spectra show evidence that the edges of the hexagonal crystallites are predominantly oriented along the zigzag direction. Density functional theory calculations demonstrate that the edge selectivity derives from favorable kinetics of sequential incorporation of carbon atoms to the vacancies in nonzigzag portions of the edges, driving the edges to pure zigzag geometry. This work represents an important step toward realization of graphene electronics with controlled edge geometries, which might find use in digital logic applications or zigzag-edge-based spintronic devices.

Size-selective nanoparticle growth on few-layer graphene films.

We observe that gold atoms deposited by physical vapor deposition onto few-layer graphenes condense upon annealing to form nanoparticles with an average diameter that is determined by the graphene film thickness. The data are well described by a theoretical model in which the electrostatic interactions arising from charge transfer between the graphene and the gold particle limit the size of the growing nanoparticles. The model predicts a nanoparticle size distribution characterized by a mean diameter D that follows a D proportional, variant m(1/3) scaling law where m is the number of carbon layers in the few-layer graphene film.

Polymer-Embedded Fabrication of Co2P Nanoparticles Encapsulated in N,P-Doped Graphene for Hydrogen Generation

We developed a method to engineer well-distributed dicobalt phosphide (Co2P) nanoparticles encapsulated in N,P-doped graphene (Co2P@NPG) as electrocatalysts for hydrogen evolution reaction (HER). We fabricated such nanostructure by the absorption of initiator and functional monomers, including acrylamide and phytic acid on graphene oxides, followed by UV-initiated polymerization, then by adsorption of cobalt ions and finally calcination to form N,P-doped graphene structures. Our experimental results show significantly enhanced performance for such engineered nanostructures due to the synergistic effect from nanoparticles encapsulation and nitrogen and phosphorus doping on graphene structures. The obtained Co2P@NPG modified cathode exhibits small overpotentials of only -45 mV at 1 mA cm(-2), respectively, with a low Tafel slope of 58 mV dec(-1) and high exchange current density of 0.21 mA cm(-2) in 0.5 M H2SO4. In addition, encapsulation by N,P-doped graphene effectively prevent nanoparticle from corrosion, exhibiting nearly unfading catalytic performance after 30 h testing. This versatile method also opens a door for unprecedented design and fabrication of novel low-cost metal phosphide electrocatalysts encapsulated by graphene.

Controlled Doping of Graphene Using Ultraviolet Irradiation

The electronic properties of graphene are tunable via doping, making it attractive in low dimensional organic electronics. Common methods of doping graphene, however, adversely affect charge mobility and degrade device performance. We demonstrate a facile shadow mask technique of defining electrodes on graphene grown by chemical vapor deposition (CVD) thereby eliminating the use of detrimental chemicals needed in the corresponding lithographic process. Further, we report on the controlled, effective, and reversible doping of graphene via ultraviolet (UV) irradiation with minimal impact on charge mobility. The change in charge concentration saturates at ∼2 × 1012 cm–2 and the quantum yield is ∼10−5 e/photon upon initial UV exposure. This simple and controlled strategy opens the possibility of doping wafer-size CVD graphene for diverse applications.

High-on/off-ratio graphene nanoconstriction field-effect transistor.

A method is reported to pattern monolayer graphene nanoconstriction field-effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback-controlled electromigration (FCE) to form a constriction in a gold etch mask that is first patterned using conventional lithographic techniques. The use of FCE allows the etch mask to be patterned on size scales below the limit of conventional nanolithography. The opening of a confinement-induced energy gap is observed as the NCFET width is reduced, as evidenced by a sharp increase in the NCFET on/off ratio. The on/off ratios obtained with this procedure can be larger than 1000 at room temperature for the narrowest devices; this is the first report of such large room-temperature on/off ratios for patterned graphene FETs.