Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Zhigang Jia is active.

Publication


Featured researches published by Zhigang Jia.


RSC Advances | 2015

The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality

Lin Shang; Taiping Lu; Guangmei Zhai; Zhigang Jia; Hua Zhang; Shufang Ma; Tianbao Li; Jian Liang; Xuguang Liu; Bingshe Xu

The role of the nucleation layer thickness on the GaN crystal quality grown by metal organic chemical vapor deposition is explored. The surface morphologies of a low-temperature GaN nucleation layer (NL) investigated by Atomic Force Microscopy shows the nuclei grain size increases with increasing thickness. After annealing, island-like morphologies of the low-temperature GaN NL are obtained. Increasing the NL thickness is beneficial for obtaining larger island size, however, the uniformity of the island size is deteriorated. The high-resolution X-ray diffraction analysis reveals that bulk GaN crystal properties are closely connected with NL thickness, which can be well explained by the dislocation generation and propagation process in the GaN films. All the obtained results indicate that the NL thickness effectively controls the size and density of the islands and thus determines the crystal properties of GaN films.


Nanoscale Research Letters | 2017

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Xiaorun Zhou; Taiping Lu; Yadan Zhu; Guangzhou Zhao; Hailiang Dong; Zhigang Jia; Yongzhen Yang; Yongkang Chen; Bingshe Xu

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.


Nanoscale Research Letters | 2018

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Tianbao Li; Chenyang Liu; Zhe Zhang; Bin Yu; Hailiang Dong; Wei Jia; Zhigang Jia; Chunyan Yu; Lin Gan; Bingshe Xu; Haiwei Jiang

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.


AIP Advances | 2018

GaN epitaxial layers grown on multilayer graphene by MOCVD

Tianbao Li; Chenyang Liu; Zhe Zhang; Bin Yu; Hailiang Dong; Wei Jia; Zhigang Jia; Chunyan Yu; Lin Gan; Bingshe Xu

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.


Optical Materials Express | 2017

Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip

Dan Han; Shufang Ma; Zhigang Jia; Peizhi Liu; Wei Jia; Hailiang Dong; Lin Shang; Guangmei Zhai; Bingshe Xu

A InGaN/GaN micro-square array light-emitting diode (LED) chip (micro-chip) has been successfully fabricated by the focused ion beam (FIB) etching technique, which can reduce ohmic contact degradation in the fabrication process of three-dimensional (3D) structure devices. Our results show that the micro-chip exhibits a similar current–voltage performance compared to the corresponding InGaN/GaN planar LED chip (planar-chip). At the driving current of 20 mA, the output power of the micro-chip is improved by 17.8% in comparison to that of the planar-chip. A relatively broad emission and enhanced emission intensity in the perpendicular direction are obtained in angular-resolved EL (AREL) measurements for the micro-chip. Three-dimensional finite difference time domain (FDTD) simulations have also proven enhanced emitted optical energy distribution. The enhancement mechanism is correlated to the increased light extraction efficiency (LEE) of the micro-chip, mainly owing to more photons from the exposed MQWs surfaces that can be efficiently extracted by the micro-square array.


Nanoscale Research Letters | 2017

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

Yadan Zhu; Taiping Lu; Xiaorun Zhou; Guangzhou Zhao; Hailiang Dong; Zhigang Jia; Xuguang Liu; Bingshe Xu


Physical Chemistry Chemical Physics | 2016

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Hailiang Dong; Jing Sun; Shufang Ma; Jian Liang; Taiping Lu; Zhigang Jia; Xuguang Liu; Bingshe Xu


Superlattices and Microstructures | 2017

Enhancement of carrier localization effect and internal quantum efficiency through In-rich InGaN quantum dots

Jianjie Liu; Zhigang Jia; Shufang Ma; Hailiang Dong; Guangmei Zhai; Bingshe Xu


Materials Letters | 2018

Growth and optical properties of GaN pyramids using in-situ deposited SiN x layer

Guangyun Tong; Wei Jia; Teng Fan; Hailiang Dong; Tianbao Li; Zhigang Jia; Bingshe Xu


Superlattices and Microstructures | 2017

Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers

Yadan Zhu; Taiping Lu; Xiaorun Zhou; Guangzhou Zhao; Hailiang Dong; Zhigang Jia; Xuguang Liu; Bingshe Xu

Collaboration


Dive into the Zhigang Jia's collaboration.

Top Co-Authors

Avatar

Bingshe Xu

Taiyuan University of Technology

View shared research outputs
Top Co-Authors

Avatar

Hailiang Dong

Taiyuan University of Technology

View shared research outputs
Top Co-Authors

Avatar

Taiping Lu

Taiyuan University of Technology

View shared research outputs
Top Co-Authors

Avatar

Xuguang Liu

Taiyuan University of Technology

View shared research outputs
Top Co-Authors

Avatar

Guangmei Zhai

Taiyuan University of Technology

View shared research outputs
Top Co-Authors

Avatar

Lin Shang

Taiyuan University of Technology

View shared research outputs
Top Co-Authors

Avatar

Shufang Ma

Shaanxi University of Science and Technology

View shared research outputs
Top Co-Authors

Avatar

Wei Jia

Taiyuan University of Technology

View shared research outputs
Top Co-Authors

Avatar

Tianbao Li

Taiyuan University of Technology

View shared research outputs
Top Co-Authors

Avatar

Guangzhou Zhao

Taiyuan University of Technology

View shared research outputs
Researchain Logo
Decentralizing Knowledge