Zhijuan Su

Low loss factor Co2Z ferrite composites with equivalent permittivity and permeability for ultra-high frequency applications

Ferrite composites of nominal composition Ba3Co2+xIrxFe24−2xO41 were studied in order to achieve low magnetic and dielectric losses and equivalent permittivity and permeability over a frequency range of 0.3–1 GHz. Crystallographic structure was characterized by X-ray diffraction, which revealed a Z-type phase accompanied by increasing amounts of Y-type phase as the iridium amount was increased. The measured microwave dielectric and magnetic properties showed that the loss tan δe and loss tan δμ decreased by 80% and 90% at 0.8 GHz with the addition of iridium of x = 0.12 and 0.15, respectively. An effective medium approximation was adopted to analyze the composite ferrites having mixed phase structures. Moreover, adding Bi2O3 enabled equivalent values of real permittivity and real permeability over the studied frequency range. The resultant data give rise to low loss factors, i.e., tan δe/e′ = 0.008 and tan δμ/μ′ = 0.037 at 0.8 GHz, while characteristic impedance was the same as that of free space.

Crystallographically textured self-biased W-type hexaferrites for X-band microwave applications

We report the magnetic and structural properties of a series of W-type barium hexaferrites of composition BaZn2−xCoxFe16O27, where x = 0.15, 0.20, and 0.25. The anisotropy field of these barium ferrites (BaW) decreased with the substitution of divalent Co ions, while they maintained crystallographic c-axis texture. The measured anisotropy field was ∼10 kOe, and a hysteresis loop squareness Mr/Ms = 79% was obtained due to well-controlled grain size within the range of single domain scale. These two properties make the BaW suitable for applications in microwave devices at lower frequencies, such as self-biased circulators operated at X-band frequencies.

Giant magnetoresistance due to magnetoelectric currents in Sr3Co2Fe24O41 hexaferrites

The giant magnetoresistance and magnetoelectric (ME) effects of Z-type hexaferrite Sr3Co2Fe24O41 were investigated. The present experiments indicated that an induced magnetoelectric current in a transverse conical spin structure not only presented a nonlinear behavior with magnetic field and electric field but also depended upon a sweep rate of the applied magnetic field. More interestingly, the ME current induced magnetoresistance was measured, yielding a giant room temperature magnetoresistance of 32.2% measured at low magnetic fields (∼125 Oe). These results reveal great potential for emerging applications of multifunctional magnetoelectric ferrite materials.

Magnetocrystalline Anisotropy and FMR Linewidth of Zr and Zn-Doped Ba-Hexaferrite Films Grown on MgO (111)

Ba M-type ferrite films of composition BaFe₁₁Zn_0.5Zr_0.5O₁₉ were grown on MgO (111) substrates by pulsed laser deposition. Both Zn and Zr divalent ions were introduced to reduce the magnetic anisotropy field to ~7.5 kOe, or 46% lower than the parent Ba M-type compound. Temperature dependence of magnetization over 25 to 350°C was investigated, indicating a Curie temperature of 320°C. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.55 GHz, was 120 Oe. The substituted sample had a K₁ of ~0.920 × 10⁶ erg/cm³. Such sample properties provide an attractive option for self-biased microwave devices applications operating at X (8-12 GHz) and Ku bands (12-18 GHz) as circulators and isolators.

Magnetic and microwave properties of U-type hexaferrite films with high remanence and low ferromagnetic resonance linewidth

U-type barium hexaferrite films (Ba4Ni1.4Co0.6Fe36O60) were deposited on (0001) sapphire substrates by pulsed laser deposition. Microstructure and magnetic properties of the films were characterized by X-ray diffraction, scanning electron microscopy and vibrating sample magnetometry. Ferromagnetic resonance (FMR) measurements were performed at X-band. The results indicate an anisotropy field of ∼8 kOe, and the saturation magnetization (4πMs) of ∼3.6 kG. An optimal post-deposition annealing of films results in a strong (0 0 n) crystallographic texture and a high hysteresis loop squareness (Mr/Ms = 92%) leading to self biased properties. Furthermore, the highly self-biased ferrite films exhibited an FMR linewidth of ∼200 Oe. The U-type hexaferrite films having low microwave loss, low magnetic anisotropy field, and high squareness are a suitable alternative to Sc or In doped BaM ferrites that have been the choice material for self-biased microwave devices at X-band frequencies.

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al2O3 substrates

Thick barium hexaferrite BaFe12O19 (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al2O3 substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πMs, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

Magnetic Properties of a Highly Textured Barium Hexa-Ferrite Quasi-Single Crystal and Its Application in Low-Field Biased Circulators

A highly textured M-type barium hexa-ferrite (BaM) quasi-single crystal was fabricated by a magnetic forming plus liquid participation sintering technique. Its grain orientation degree was determined to be 97.3% with the tile angle no more that 5°. The magnetization behavior from its angular magnetic hysteresis loops was very similar to that of a BaM single crystal. Moreover, the feasibility of practical utilization of the as-fabricated BaM quasi-single crystal in low-field biased circulators was certificated by a simulation method.

High frequency permeability and permittivity spectra of BiFeO3/(CoTi)-BaM ferrite composites

Low magnetic loss ferrite composites consisting of Ba(CoTi)1.2Fe9.6O19 and BiFeO3 (BFO) ferrite were investigated for permeability, permittivity, and high frequency losses at 10 MHz–1 GHz. The phase fraction of BiFeO3 was quantitatively analyzed by X-ray diffraction measurements. An effective medium approach was employed to predict the effective permeability and permittivity for the ferrite composites, which was found to be in good agreement with experimental data. The experiment demonstrated low magnetic losses (<0.128), modified by BFO phase fraction, while retaining high permeability (∼10.86) at 300 MHz. More importantly, the BFO phase resulted in a reduction of magnetic loss by 32%, as BFO phase increased from 2.7 vol. % to 12.6 vol. %. The effect of BFO phase on magnetic and dielectric properties revealed great potential for use in the miniaturization of high efficiency antennas.

High quality Y-type hexaferrite thick films for microwave applications by an economical and environmentally benign crystal growth technique

Thick barium hexaferrite Ba2Zn2Fe12O22 (i.e., Zn2Y) films having thicknesses of ∼100 μm were epitaxially grown on MgO (111) substrates using an environmentally benign ferrite-salt mixture by vaporizing the salt. X-ray diffraction pole figure analyses showed (00l) crystallographic alignment with little in plane dispersion confirming epitaxial growth. Saturation magnetization, 4πMs, was measured for as-grown films to be 2.51 ± 0.1 kG with an out of plane magnetic anisotropy field HA of 8.9 ± 0.1 kOe. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.6 GHz, was measured to be 62 Oe. These properties demonstrate a rapid, convenient, cost-effective, and nontoxic method of growing high quality thick crystalline ferrite films which could be used widely for microwave device applications.

Effect of cobalt substitution on magnetic properties of Ba4Ni2−xCoxFe36O60 hexaferrite

Co-substituted U-type hexagonal ferrite bulks, with composition of Ba4Ni2−xCoxFe36O60 (x=0.2, 0.4, 0.6, 0.8), were prepared by a conventional ceramic method. Saturation magnetization (4πMs), coercivity (Hc), and Curie temperature (Tc) were investigated. Anisotropy constant (K1) was calculated by fitting the magnetization curve (M-H) according to the law of approach to saturation, and anisotropy field (Ha) was calculated accordingly. The results reveal that all the samples possess the U-type hexagonal crystallographic structure. With increasing cobalt substitution content (x), the lattice parameters (a and c) almost remain the same owing to the similar radii of Ni2+ (0.72 A) Co2+ (0.74 A) ions. 4πMs goes up, while Hc Hc shows an opposite trend. K1 and Ha monotonously decrease resulting from that cobalt substitution weakens the c-axis orientation. Additionally, Tc increases from 467 °C to 484 °C.Co-substituted U-type hexagonal ferrite bulks, with composition of Ba4Ni2−xCoxFe36O60 (x=0.2, 0.4, 0.6, 0.8), were prepared by a conventional ceramic method. Saturation magnetization (4πMs), coercivity (Hc), and Curie temperature (Tc) were investigated. Anisotropy constant (K1) was calculated by fitting the magnetization curve (M-H) according to the law of approach to saturation, and anisotropy field (Ha) was calculated accordingly. The results reveal that all the samples possess the U-type hexagonal crystallographic structure. With increasing cobalt substitution content (x), the lattice parameters (a and c) almost remain the same owing to the similar radii of Ni2+ (0.72 A) Co2+ (0.74 A) ions. 4πMs goes up, while Hc Hc shows an opposite trend. K1 and Ha monotonously decrease resulting from that cobalt substitution weakens the c-axis orientation. Additionally, Tc increases from 467 °C to 484 °C.