Zhonglin Lu

Effect of annealing ambient on the ferromagnetism of Mn-doped anatase TiO2 films

The magnetic properties of anatase Ti1?xMnxO2 (0 < x < 0.06) films prepared by sol?gel spin coating annealed in air and vacuum have been investigated. Room temperature ferromagnetism was observed in all the films. Enhancement of ferromagnetism is revealed in the films annealed in vacuum. The magnetic moment of the films annealed in vacuum, at 300?K, is 0.285 ? 0.004 ?B/Mn for Ti0.9618Mn0.0382 O2 and 0.366 ? 0.005 ?B/Mn for Ti0.9409 Mn0.0591O2. It is believed that the enhanced ferromagnetism could be due to the formation of oxygen vacancies and/or defects.

Hole-mediated ferromagnetism in polycrystalline Si1−xMnx:B films

Polycrystalline Si1−xMnx thin films codoped with boron have been fabricated by sputtering technique followed by postcrystallization processes. Structural, magnetic, and transport properties of the films were investigated. Magnetic property investigation indicated that the films consist of two ferromagnetic phases. The low Curie temperature ferromagnetic phase (TC∼50K) is due to the Mn4Si7 phase in the films as detected by x-ray diffraction, while the high temperature one (TC∼250K) is resulted from the incorporation of Mn into silicon. It has been found that, with carriers confirmed as p type, for the same effective concentration of Mn the saturation magnetization of the films with higher carrier concentration is higher than that of those with lower carrier concentration, which suggests a mechanism of hole-mediated ferromagnetism for Si-based diluted ferromagnetic semiconductors.

Effects of annealing and hydrogenation on the properties of ZnMnO polycrystalline films synthesized by plasma enhanced chemical vapour deposition

For the Mn-doped ZnO polycrystalline films fabricated with plasma enhanced chemical vapour deposition technique followed by thermal treatment at 600 °C for 5 h, the effects on both rapid thermal annealing up to 900 °C in Nitrogen ambient for 2 min and hydrogenation processing have been investigated. It has been indicated that after the rapid thermal annealing the magnetization of the films decreases. The magnetization of the films has been found to increase with the increase in hydrogenation processing duration at the early stage of the processing and gets a saturated value after about 60 min while there is a decrease with increasing electron concentration after a rapid thermal process in nitrogen ambient.

Effect of hydrogenation on the ferromagnetism in polycrystalline Si1−xMnx:B thin films

Polycrystalline Si1−xMnx films codoped with boron have been prepared by radio-frequency magnetron sputtering deposition followed by post-thermal processing for crystallization. The polycrystalline thin films were treated by hydrogen plasma excited with approach of radio-frequency plasma-enhanced chemical vapor deposition. It has been found that the saturation magnetization decreases after hydrogenation while the structural properties of the films do not show any change. At the same time, it is observed that after hydrogenation the hole concentration in the films is lower than that before the treatment, believed to be due to a combination between hydrogen and boron. The obvious correlation between the magnetic properties and the transport properties of the polycrystalline Si1−xMnx films suggests that there be a mechanism of hole-mediated ferromagnetism for Si-based diluted magnetic semiconductors.

Anomalous Hall effect and magnetoresistance of (FexSn1?x)1?y(SiO2)y films

Structural, magnetic and transport properties were investigated for heterogeneous (FexSn1?x)1?y(SiO2)y films deposited on oxidized silicon substrates at room temperature with RF magnetron sputtering. X-ray diffraction indicated that the films consist of a nanocrystalline phase of FeSn2 embedded into an amorphous background. For (FexSn1?x)92.33(SiO2)7.67, it was demonstrated that with the increase in the Fe component an evolution from negative isotropic magnetoresistance (MR) behaviour to one with a mixture of anisotropic magnetoresistance and isotropic negative MR occurs. On fixing the SiO2 percentage and decreasing the Fe?Sn ratio, the negative transverse MR first increases and then decreases. For samples having a fixed Fe?Sn ratio, the negative transverse MR increases with the increase in SiO2. Compared with the Fe?Sn system, the addition of 7.67?at.% SiO2 enhances the saturated Hall resistivity. Further increase in SiO2 introduces a complicated saturated Hall resistivity dependence on the concentration of SiO2.