Zhou Dong

Suppression of radiation loss by hybridization effect in two coupled split-ring resonators

This paper investigates the radiation properties of two coupled split-ring resonators (SRRs). Due to electromagnetic coupling, two hybrid magnetic plasmon modes were induced in the structure. Our calculations show that the radiation loss of the structure was greatly suppressed by the hybridization effect. This led to a remarkable increase in the Q-factor of the coupled system compared to the single SRR. By adjusting the distance between the two SRRs, the Q-factor changed correspondingly due to different electromagnetic coupling strengths. This resulted in a coupled structure that functioned as a new type of nanocavity with an adjustable Q-factor.

Optical and spectral characteristics of highly c-axis oriented Nd:LiNbO3 film on SiO2 /Si substrate by PLD

Nd-doped LiNbO3 (Nd : LiNbO3) thin film with c-axis preferred orientation has first been fabricated on a SiO2/Si(1 1 1) substrate by pulsed laser deposition. A smooth surface and a sharp interface have been affirmed by scanning probe microscopy and transmission electron microscopy, respectively. The fluorescence at around 902.5, 1087.5 and 1379.3 nm was excited with a diode laser at 808 nm, and the optical and spectral characteristics and waveguide behaviours were investigated as well. The results show that the highly c-axis oriented Nd : LiNbO3 thin film on SiO2/Si(1 1 1) substrate may have actual application in integrated optics.

Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes*

We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) with positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes*

In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C.

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress*

The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.

Negative-Index Refraction in a Lamellar Composite with Alternating Single Negative Layers

Negative-index refraction is demonstrated in a lamellar composite with epsilon-negative (ENG) and mu-negative (MNG) materials stacked alternatively. Based on the effective medium approximation, simultaneously negative effective permittivity and permeability of such a lamellar composite are obtained theoretically and further proven by full-wave simulations. Consequently, the renowned left-handed metamaterial comprising split ring resonators and wires is interpreted as an analogy of such ENG–MNG layers. In addition, beyond the effective medium approximation, the propagating field squeezed near the ENG/MNG interface is demonstrated to be left-handed surface waves with backward phase velocity.Negative-index refraction is achieved in a lamellar composite with epsilon-negative (ENG) and mu-negative (MNG) materials stacked alternatively. Based on the effective medium approximation, simultaneously negative effective permittivity and permeability of such a lamellar composite are obtained theoretically and further proven by full-wave simulations. Consequently, the famous left-handed metamaterial comprising split ring resonators and wires is interpreted as an analogy of such an ENG-MNG lamellar composite. In addition, beyond the effective medium approximation, the propagating field squeezed near the ENG/MNG interface is demonstrated to be left-handed surface waves with backward phase velocity.