Zhu Yabin

Helium-Implantation-Induced Damage in NHS Steel Investigated by Slow-Positron Annihilation Spectroscopy

Evolutions of defects and helium contained defects produced by atomic displacement and helium deposition with helium implantation at different temperatures in novel high silicon (NHS) steel are investigated by a slow positron beam. Differences of the defect information among samples implanted by helium to a fluence of 1 x 10(17) ions/cm(2) at room temperature, 300 degrees C, 450 degrees C and 750 degrees C are discussed. It is found that the mobility of vacancies and vacancy clusters, a recombination of vacancy-type defects and the formation of the He-V complex lead to the occurrence of these differences. At high temperature irradiations, a change of the diffusion mechanism of He atoms/He bubbles might be one of the reasons for the change of the S-parameter.

Cavity Swelling in Three Ferritic-Martensitic Steels Irradiated by 196 MeV Kr Ions

We report on cavity swelling at peak damage regions of three ferritic-martensitic (FM) steels (NHS, RAFM and T91) irradiated by 196 MeV Kr ions at different temperatures (450/550°C). Cavity configurations of the irradiated specimens are investigated by transmission electron microscopy with cross-section technique. For home-made reduced activation ferritic-martensitic (RAFM) and T91 steels irradiated at 450°C, both large size and bimodal size distribution of the cavity are found in their peak damage regions, whereas novel high silicon (NHS) steel exhibits good swelling resistance at different irradiation temperatures. Temperature relativity of the cavity swelling in NHS, RAFM and T91 steels is discussed briefly.

Growth of MgB2 Thin Films by Chemical Vapour Deposition Using B2H6 as a boron Source

Superconducting MgB2 thin films were grown on single crystal Al2O3 (0001) by chemical vapour deposition using B2H6 as a boron source. MgB2 film was then accomplished by annealing the boron precursor films in the presence of high-purity magnesium bulk at 890°C in vacuum. The as-grown MgB2 films are smooth and c-axis-oriented. The films exhibit a zero-resistance transition of about 38 K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9×107 A/cm2 at 10 K in zero field.

Cavity swelling of RAFM steel under 792 MeV Ar-ions irradiation at 773 K

China reduced-activation ferritic/martensitic steel is irradiated at 773 K with 792 MeV Ar-ions to fluences of 2.3×1020 and 4.6×1020 ions/m2, respectively. The variation of the microstructures of the Reduced-activation ferritic/martensitic (RAFM) steel samples with the Ar-ion penetration depth is investigated using a transmission electron microscope (TEM). From analyses of the microstructure changes along with the Ar-ions penetrating depth, it is found that high-density cavities form in the peak damage region. The average size and the number density of the cavities depend strongly on the damage level and Ar-atom concentration. Swelling due to the formation of cavities increases significantly with an increased damage level, and the existence of deposited Ar-atoms also enhances the growth of the average size of the cavities. The effect of atom displacements and Ar-atoms on the swelling of the RAFM steel under high energy Ar-ion irradiation is discussed briefly.

The Structural Modification of LiTaO3 Crystal Induced by 100-keV H-ion Implantation

The effects of 100 keV H-ion implantation on the structure of LiTaO3 crystal are investigated by Raman and UV/VIS/NIR spectroscopies. The implantation fluence is in the range from 1.0 × 1013 to 1.0 × 1017 H+/cm2. The experimental results show the dependence of the crystal structure on ion fluence. It is found that the structural modification of the LiTaO3 crystal is due to two processes. One is H-ions occupying lithium vacancies (VLi), which is predominant at a fluence less than 1.0 × 1014 H+/cm2. This process causes the reduction of negative charge centers in the crystal and relaxation of distortion in the local lattice structure. The other is the influence of defects created during implantation, which plays a dominant role gradually in the structural modification at a fluence larger than 1.0 × 1015 H+/cm2.

Modification of Optical Band-Gap of Si Films After Ion Irradiation

Amorphous silicon (a-Si), nanocrystalline silicon (nc-Si) and hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated by using chemical vapor deposition (CVD) system. The a-Si and nc-Si thin films were irradiated with 94 MeV Xe-ions at fluences of 1.0 × 1011 ions/cm2, 1.0 × 1012 ions/cm2 and 1.0 × 1013 ions/cm2 at room temperature (RT). The nc-Si:H films were irradiated with 9 MeV Xe-ions at 1.0 × 1012 Xe/cm2, 1.0 × 1013 Xe/cm2 and 1.0 × 1014 Xe/cm2 at RT. For comparison, mono-crystalline silicon (c-Si) samples were also irradiated at RT with 94 MeV Xe-ions. All samples were analyzed by using an UV/VIS/NIR spectrometer and an X-ray powder diffractometer. Variations of the optical band-gap (Eg) and grain size (D) versus the irradiation fluence were investigated systematically. The obtained results showed that the optical band-gaps and grain size of the thin films changed dramatically whereas no observable change was found in c-Si samples after Xe-ion irradiation. Possible mechanism underlying the modification of silicon thin films was briefly discussed.

Fabrication of MgB2 superconducting films by different methods

Abstract MgB2 superconducting films have been successfully fabricated on single crystal MgO (111) and c-AL2O3 substrates by different methods. The film deposited by pulsed laser deposition is c-axis oriented with zero resistance transistion temperature of 38.4K, while the other two films fabricated by chemical vapor deposition and electrophoresis are c-axis textured with zero resistance transistion temperature of 38 K and 39 K, respectively. Magnetization hysteresis measurements yield critical current density J c of 107 A/ cm2 at 15K in zero field for the thin film and of 105 A/ cm2 for the thick film. For the thin film deposited by chemical vapor deposition, the microwave surface resistance at 10 K is found to be as low as 100µΩ, which is comparable with that of a high-quality high-temperature superconducting thin film of YBCO. * Supported by the Major State Basic Research Development Program of China (Grant No. 1999064604)

Anisotropy of the upper critical field in c-axis oriented MgB2 thin films

The localized growth of materials has been realized in a dielectric barrier discharge reactor in the mixture of acetylene and argon in previous work. In this paper, the morphology of the materials synthesized in the process is studied. The results indicate that the polymers structure consists of three layers. The layer near the substrate is homogeneous with thickness of several micrometres; the middle layer is composed of dense bulges with height of about more than 10mum in average. The distance between two neighbouring bulges is about 230mum; the top layer is made up of a few large columns with the height up to 2mm, and with the average distance of about 3.5mm. The growth of the three layers corresponds to three types of discharge. The discharge mechanism is analysed through studying the morphology of the polymer. It can be deduced from the morphology that the first and second discharge phases should belong to the Townsend breakdown, and the last discharge phase should be explained on the basis of the streamer mechanism.

Fabrication of YBCO/YSZ and YBCO/MgO thick films using electrophoretic deposition with top-seeded melt growth process

Superconducting thick films were grown on single crystals MgO and YSZ by electrophoretic deposition with Y2BaCuO5(Y211) addition. YBCO thick films were then accomplished by sintering the precursor films above the peritectic temperature. Single crystals of MgO (3×3×0.5 mm3) were used as top-seed to control crystal structure of the thick films. As shown by scanning electron microscopy, the morphologies of YBCO/YSZ and YBCO/MgO thick films are spherulitic texture and platelet type. The critical temperature is ~89 K for the YBCO/YSZ thick film; the onset transition temperature is 86.4 K and the transition width is ~3 K for YBCO/MgO thick film. The critical current densities (as determined by Bean model) are, in A/cm2, 3870 (77 K) for YBCO/YSZ thick films and 2399 (77 K) for YBCO/MgO thick films, which are comparable to the best Jc reported of the thick films prepared by the same method.

Superconductivity and x-ray photoemission study of MgB2 thin films

Highly c-axis oriented MgB2 thin films with T-c(onset) of 39.6K were fabricated by magnesium diffusing into pulsed-laser-deposited boron precursors. The estimation of critical current density J(c), using hysteresis loops and the Bean model, has given the value of 10(7) A/cm(2) (15K, 0T), which is one of the highest values ever reported. The x-ray photoemission study of the MgB2 thin films has revealed that the binding energies of Mg 2p and B 1s are at 49.4 eV and 186.9 eV, which are close to those of metallic Mg and transition-metal diborides, respectively.