Zlatan Aksamija

Impact of phonon-surface roughness scattering on thermal conductivity of thin si nanowires.

We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D<100 nm. A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a description of the surface through the root-mean-square roughness height Delta and autocovariance length L. Using a full phonon dispersion relation, we find a quadratic dependence of thermal conductivity on diameter and roughness as (D/Delta)(2). Computed results show excellent agreement with experimental data for a wide diameter and temperature range (25-350 K), and successfully predict the extraordinarily low thermal conductivity of 2 W m(-1) K-1 at room temperature in rough-etched 50 nm silicon nanowires.

Ballistic to diffusive crossover of heat flow in graphene ribbons

Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional devices or interconnects with dimensions comparable to the phonon mean free path. Here we find that short, quarter-micron graphene samples reach ~35% of the ballistic thermal conductance limit up to room temperature, enabled by the relatively large phonon mean free path (~100 nm) in substrate-supported graphene. In contrast, patterning similar samples into nanoribbons leads to a diffusive heat-flow regime that is controlled by ribbon width and edge disorder. In the edge-controlled regime, the graphene nanoribbon thermal conductivity scales with width approximately as ~W(1.8)(0.3), being about 100 W m(-1) K(-1) in 65-nm-wide graphene nanoribbons, at room temperature. These results show how manipulation of two-dimensional device dimensions and edges can be used to achieve full control of their heat-carrying properties, approaching fundamentally limited upper or lower bounds.

Lattice thermal conductivity of graphene nanoribbons: Anisotropy and edge roughness scattering

We present a calculation of the thermal conductivity of graphene nanoribbons GNRs, based on solving the Boltzmann transport equation with the full phonon dispersions, a momentum-dependent model for edge roughness scattering, as well as three-phonon and isotope scattering. The interplay between edge roughness scattering and the anisotropy of the phonon dispersions results in thermal conduction that depends on the chiral angle of the nanoribbon. Lowest thermal conductivity occurs in the armchair direction and highest in zig-zag nanoribbons. Both the thermal conductivity and the degree of armchair/zig-zag anisotropy depend strongly on the width of the nanoribbon and the rms height of the edge roughness, with the smallest and most anisotropic thermal conductivities occurring in narrow GNRs with rough edges.

Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires.

We model and compare the thermal conductivity of rough semiconductor nanowires (NWs) of Si, Ge, and GaAs for thermoelectric devices. On the basis of full phonon dispersion relations, the effect of NW surface roughness on thermal conductivity is derived from perturbation theory and appears as an efficient way to scatter phonons in Si, Ge, and GaAs NWs with diameter D < 200 nm. For small diameters and large root-mean-square roughness Delta, thermal conductivity is limited by surface asperities and varies quadratically as (D/Delta)(2). At room temperature, our model previously agreed with experimental observations of thermal conductivity down to 2 W m(-1) K(-1) in rough 56 nm Si NWs with Delta = 3 nm. In comparison to Si, we predict here remarkably low thermal conductivity in Ge and GaAs NWs of 0.1 and 0.4 W m(-1) K(-1), respectively, at similar roughness and diameter.

Bimodal Phonon Scattering in Graphene Grain Boundaries

Graphene has served as the model 2D system for over a decade, and the effects of grain boundaries (GBs) on its electrical and mechanical properties are very well investigated. However, no direct measurement of the correlation between thermal transport and graphene GBs has been reported. Here, we report a simultaneous comparison of thermal transport in supported single crystalline graphene to thermal transport across an individual graphene GB. Our experiments show that thermal conductance (per unit area) through an isolated GB can be up to an order of magnitude lower than the theoretically anticipated values. Our measurements are supported by Boltzmann transport modeling which uncovers a new bimodal phonon scattering phenomenon initiated by the GB structure. In this novel scattering mechanism, boundary roughness scattering dominates the phonon transport in low-mismatch GBs, while for higher mismatch angles there is an additional resistance caused by the formation of a disordered region at the GB. Nonequilibrium molecular dynamics simulations verify that the amount of disorder in the GB region is the determining factor in impeding thermal transport across GBs.

Full-dispersion Monte Carlo simulation of phonon transport in micron-sized graphene nanoribbons

We simulate phonon transport in suspended graphene nanoribbons (GNRs) with real-space edges and experimentally relevant widths and lengths (from submicron to hundreds of microns). The full-dispersion phonon Monte Carlo simulation technique, which we describe in detail, involves a stochastic solution to the phonon Boltzmann transport equation with the relevant scattering mechanisms (edge, three-phonon, isotope, and grain boundary scattering) while accounting for the dispersion of all three acoustic phonon branches, calculated from the fourth-nearest-neighbor dynamical matrix. We accurately reproduce the results of several experimental measurements on pure and isotopically modified samples [S. Chen et al., ACS Nano 5, 321 (2011);S. Chen et al., Nature Mater. 11, 203 (2012); X. Xu et al., Nat. Commun. 5, 3689 (2014)]. We capture the ballistic-to-diffusive crossover in wide GNRs: room-temperature thermal conductivity increases with increasing length up to roughly 100 μm, where it saturates at a value of 5800 W/m K. This finding indicates that most experiments are carried out in the quasiballistic rather than the diffusive regime, and we calculate the diffusive upper-limit thermal conductivities up to 600 K. Furthermore, we demonstrate that calculations with isotropic dispersions overestimate the GNR thermal conductivity. Zigzag GNRs have higher thermal conductivity than same-size armchair GNRs, in agreement with atomistic calculations.

Universal features of phonon transport in nanowires with correlated surface roughness

The ultralow thermal conductivity

Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes.

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Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics

observed experimentally in intentionally roughened silicon nanowires (SiNWs) is reproduced in phonon Monte Carlo simulations with exponentially correlated real-space rough surfaces similar to measurement [J. Lim, K. Hippalgaonkar, S. C. Andrews, A. Majumdar, and P. Yang, Nano Lett. 12, 2475 (2012)]. Universal features of thermal transport are revealed by presenting

Thermal Resistance of Transferred-Silicon-Nanomembrane Interfaces.

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