Zong-Xiang Xu

Arrays of ZnO/ZnxCd1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications

Arrays of ZnO/Zn(x)Cd(1-x)Se (0 ≤ x ≤ 1) core/shell nanocables with shells of tunable compositions have been synthesized on fluorine-doped tin oxide glass substrates via a simple ion-exchange approach. Through the effects of stoichiometry and type II heterojunction, optical absorptions of the nanocable arrays can be controllably tuned to cover almost the entire visible spectrum. Lattice parameters and band gaps of the ternary Zn(x)Cd(1-x)Se shells were found to have respectively linear and quadratic relationships with the Zn content (x). These ZnO/Zn(x)Cd(1-x)Se nanocable arrays are further demonstrated to be promising photoelectrodes for photoelectrochemical solar cells, giving a maximum power conversion efficiency up to 4.74%.

Diffuse phase transition in BaTi1−xSnxO3 ceramics: An intermediate state between ferroelectric and relaxor behavior

Dielectric relaxation and polar structures of BaTi1−xSnxO3 ceramics, x=0.10–0.20, are investigated by means of dielectric spectroscopy and piezoresponse force microscopy. A transition regime between “normal” ferroelectric and relaxor behaviors is encountered. In the compositions with x=0.10, a complex domain pattern confirming the ferroelectric state is observed. Strong dielectric relaxation around Tm is attributed to domain wall motion. On the other hand, the dielectric spectra in the sample with x=0.20 are very similar to those observed in relaxor ferroelectrics. Analysis of the relaxation spectra at the intermediate concentration, x=0.15, reveals both domain wall response and an additional contribution related to mesoscale polar structures. The appearance of relaxor behavior in BaTi1−xSnxO3 is discussed within the framework of the random field model.

Microcontact printing of ultrahigh density gold nanoparticle monolayer for flexible flash memories.

A uniform monolayer of alkanethiol-protected gold nanoparticle arrays with ultrahigh density have been used as microcontact-printable charge-trapping layers for the application in flexible flash memories. The new devices are compared to two reference devices with a floating gate created by thermal evaporation and electrostatic self-assembly, and show a large memory window, long retention times and good endurance properties.

Tunability and relaxor properties of ferroelectric barium stannate titanate ceramics

Barium stannate titanate [Ba(SnxTi1−x)O3, x=0.1, 0.2, 0.3, and 0.4] ceramics were prepared using a conventional solid-state reaction process. Their dielectric properties were measured under direct current bias fields ranging from 0to2.5kV∕cm. A transformation from normal to relaxor ferroelectrics was observed when x⩾0.3. Broken long-range order or “dirty” ferroelectric domains and nanodomains were observed in Ba(Sn0.1Ti0.9)O3 and Ba(Sn0.4Ti0.6)O3 by transmission electron microscopy, respectively. Voltage driven tunability was found to decrease with increasing Sn content. The change from normal ferroelectric into relaxor ferroelectric had a negative impact on the tunability value of the materials.

Nanocomposite field effect transistors based on zinc oxide/polymer blends

Significant progress is being made in the realization of thin-film transistors (TFTs) for application in various electronic devices and circuits [1-5]. Currently, one of the important challenges in this area is to design low-cost and stable organic semiconductors that possess high field-effect mobilities for constructing low-power high-speed transistor devices. However, there are only limited stable and cheap organic semiconductors that are applicable for OTFT applications. Here, we report the work in our laboratory that focus on stable, inexpensive and high field-effect mobility nano-composite materials for the potential application in OTFT technologies. Solution processed polymer based nano-composite field effect transistors with wide band gap semi-conducting ZnO nano-tetrapods and nano-crystals dispersed in the polymer matrix were utilized to study the field effect behaviour. The electrical characteristics of polymer based wide band gap nano-crystal or nano-tetrapod composite devices exhibit an increase in the hole mobility up to two orders of magnitude higher than the pristine polymer. The fabricated devices that contained a layer of MEH-PPV only exhibited p-channel behaviour with a hole mobility up to 10-4 cm2/Vs, similar to previously reported.3 Figures la and lb show the TEM (transmission electron microscope) images of ZnO nanocrystals or tetrapods dispersed in MEH-PPV solutions, respectively. The size of the nanocrystals is around 5 nm (Figure la) and the legs of the tetrapods are around 100 nm in width (Figure lb). Figure 2 shows the electrical behaviour of the devices fabricated from MEH-PPV and nanocomposite with ZnO nanocrystals or tetrapods. In Figure 2, the I-V characteristics and the transfer curves of the devices based on MEH-PPV (Figures 2a and 2b), 9 mg of ZnO nanocrystals in 10 mg of MEH-PPV or 47% of ZnO in weight (Figures 2c and 2d) and 9 mg of ZnO tetrapods in 10 mg of MEH-PPV or 47% of ZnO in weight (Figures 2e and 2f) are depicted. A saturation of the hole mobility is observed in the nanocomposite devices when the concentration of ZnO tetrapods or nanocrystal exceeds 40% in weight as shown in Figure 3. From the I-V characteristics, incorporation of ZnO nanocrystals or tetrapods in the polymer enhances the drain current and the mobility. The calculated hole mobility was up to 0.08 cm2/Vs for the ZnO nanocrystals / MEH-PPV devices and up to 0.15 cm2/Vs for the ZnO tetrapods / MEH-PPV devices, at the saturation regime. Where as in the linear regime, the hole mobility was up to 0.071 cm2/Vs for the ZnO nanocrystals / MEH-PPV devices and up to 0.096 cm2/Vs for the ZnO tetrapods / MEH-PPV devices. A decrease in the threshold voltage up to -15 V was found for both nanocomposite devices (ZnO nanocrystals or ZnO tetrapods / MEH-PPV). The sub-threshold swing was found to be 2 V per decade for the ZnO / MEH-PPV nanocomposite devices and up to 10 V per decade for the MEH-PPV devices. The on/off ratio was calculated as 105 for the nanocomposite devices where it was only 103 for MEH-PPV devices. Furthermore, a reduction in density of traps, given by NT = VT Con/q, has been observed, as shown in the inset of Figure 3, while the weight percentage of ZnO increases in the polymer. However, the trap density seems to saturate when the concentration of ZnO tetrapods or nanocrystal in the polymer exceeds 40% in weight. Incorporation of ZnO nanomaterials (nanocrystals or tetrapods) into the MEH-PPV polymer -a p-type semiconductor -did not change the nature of charge transport, as the nanocomposite devices were found to behave as p-channel transistors. However the hole mobility was enhanced in the nanocomposite devices, in addition, the band diagram of MEH-PPV and ZnO are well known. The highest occupied molecular orbital (HOMO, 5.3 eV) and lowest unoccupied molecular orbital (LUMO, 3.0 eV) levels of MEH-PPV and the valence (7.6 eV) and conduction (4.4 eV) bands of ZnO shows clearly that a huge energy barrier exists for holes to be transferred from ZnO to MEH-PPV for transport. Consequently, holes are confined in MEH-PPV and we suggest that the effect of ZnO is to reduce the density of traps in the polymer which probably is a reason for the enhanced mobility and the reduced threshold voltage.

A high-performance organic field-effect transistor based on platinum(II) porphyrin: peripheral substituents on porphyrin ligand significantly affect film structure and charge mobility.

Organic field-effect transistors incorporating planar pi-conjugated metal-free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H2(OX)] (H(2)OX=etioporphyrin-I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H2TBP=tetra-(n-butyl)porphyrin) as determined by single crystal X-ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field-effect transistors (FETs) made from thin films of all these metal-free macrocycles and their metal derivatives show a p-type semiconductor behavior with a charge mobility (mu) ranging from 10(-6) to 10(-1) cm(2) V(-1) s(-1). Annealing the as-deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2 x 10(-1) cm(2) V(-1) s(-1), which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field-effect transistors made from thin films of metal-free macrocycles (except tetra-(n-propyl)porphycene) have significantly lower mu values (3.0 x 10(-6)-3.7 x 10(-5) cm(2) V(-1) s(-1)).

Improving efficiency of organic photovoltaic cells with pentacene-doped CuPc layer

We have fabricated efficient heterojunction organic photovoltaic (OPV) cells based on pentacene-doped copper(II) phthalocyanine (CuPc) layer as donor and fullerene (C60) layer as acceptor. The power conversion efficiency of 4% pentacene-doped CuPc∕C60 OPV cell (3.06%) is increased by 77% compared with that of the standard CuPc∕C60 OPV cell (1.73%). The efficiency improvement can be attributed to the higher carrier mobility instead of the stronger photon absorption of the pentacene-doped CuPc layer.

Crossover from ferroelectric to relaxor behavior in BaTi1− x Sn x O3 solid solutions

Dielectric relaxation of BaTi1− x Sn x O3 ceramics is investigated by means of dielectric spectroscopy. The gradual crossover from ferroelectric to relaxor behavior is characterized by vanishing of the contribution due to domain walls and appearance of relaxation related to reorientation of polar nanosized regions. Typical behavior of relaxors is observed only in ceramics with x = 0.30, while the compositions with 0.175 ≤ x ≤ 0.25 show coexistence of both ferroelectric and relaxor features. The relaxor properties are supposed to be due to both weak random fields and disorder inherent in pure BaTiO3.

Nanoparticle size dependent threshold voltage shifts in organic memory transistors

The performance of organic field-effect transistor (OFET) memory devices with different size of gold nanoparticles (Au NPs) as charge trapping layers has been investigated. We synthesized 15 nm, 20 nm and 25 nm of Au NPs through a citrate-reduction method and 3-aminopropyltriethoxysilane (APTES) functionalized substrates were used to form a monolayer of Au NPs. In the programming/erasing operation, we observed reversible threshold voltage (Vth) shifts and reliable memory performances. A strong size-dependent effect on Vth shifts and memory effect was observed. Effect of size dependence on the mobilities (μ), on/off current ratios, subthreshold swings (S), data retention characteristics (>105 s) and endurance performances operation (>800 cycles) of memory devices are discussed. The experimental results suggest a guideline for optimizing the size and density of Au NPs and their influence on the device properties.

Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate)

We demonstrate air-stable low voltage flexible nonvolatile memory transistors by embedding gold nanoparticles (Au NPs) in poly(methyl methacrylate) (PMMA) as the charge storage element. The solution processability of the nanocomposite is suitable for low-cost large area processing on flexible substrates. The memory transistor exhibits a memory window of 2.1 V, long retention time ( > 10(5) s) with low operating voltage (≤5 V). The memory behavior has been tuned via varying the composition of the fillers (Au NPs), which offers relatively easy processability for different flexible electronics applications. The electrical properties of the memory devices are found to be stable under bending. These findings will be of value for low cost and low voltage advanced flexible electronics.