Zongxian Yang

Atomic and electronic structure of unreduced and reduced CeO2 surfaces: A first-principles study

The atomic and electronic structure of (111), (110), and (100) surfaces of ceria (CeO2) were studied using density-functional theory within the generalized gradient approximation. Both stoichiometric surfaces and surfaces with oxygen vacancies (unreduced and reduced surfaces, respectively) have been examined. It is found that the (111) surface is the most stable among the considered surfaces, followed by (110) and (100) surfaces, in agreement with experimental observations and previous theoretical results. Different features of relaxation are found for the three surfaces. While the (111) surface undergoes very small relaxation, considerably larger relaxations are found for the (110) and (100) surfaces. The formation of an oxygen vacancy is closely related to the surface structure and occurs more easily for the (110) surface than for (111). The preferred vacancy location is in the surface layer for CeO2(110) and in the subsurface layer (the second O-atomic layer) for CeO2(111). For both surfaces, the O vacancy forms more readily than in the bulk. An interesting oscillatory behavior is found for the vacancy formation energy in the upper three layers of CeO2(111). Analysis of the reduced surfaces suggests that the additional charge resulting from the formation of the oxygen vacancies is localized in the first three layers of the surface. Furthermore, they are not only trapped in the 4f states of cerium.

Trapping of metal atoms in the defects on graphene

The binding of a single metal atom (Pt, Pd, Au, and Sn) nearby a single-vacancy (SV) on the graphene is investigated using the first-principles density-functional theory. On the pristine graphene (pri-graphene), the Pt, Pd, and Sn prefer to be adsorbed at the bridge site, while Au prefers the top site. On the graphene with a single-vacancy (SV-graphene), all the metal atoms prefer to be trapped at the vacancy site and appear as dopants. However, the trapping abilities of the SV-graphene are varied for different metal atoms, i.e., the Pt and Pd have the larger trapping zones than do the others. The diffusion barrier of a metal atom on the SV-graphene is much higher than that on the pri-graphene, and the Pt atom has the largest diffusion barrier from the SV site to the neighboring bridge sites. On the SV-graphene, more electrons are transferred from the adatoms (or dopants) to the carbon atoms at the defect site, which induces changes in the electronic structures and magnetic properties of the systems. This work provides valuable information on the selectivity of lattice vacancy in trapping metal atoms, which would be vital for the atomic-scale design of new metal-carbon nanostructures and graphene-based catalysts.

Oxygen vacancy formation energy in Pd-doped ceria: A DFT+U study

Using the DFT+U method, i.e., first principles density functional theory calculations with the inclusion of on-site Coulomb interaction, the effects of Pd doping on the O vacancy formation energy (E(vac)) in CeO(2) has been studied. We find that E(vac) is lowered from 3.0 eV in undoped ceria to 0.6 eV in the Pd-doped compound. Much of this decrease can be attributed to emerging Pd-induced gap states above the valence band and below the empty Ce 4f states. These localized defect states involve the Pd ion and its nearest neighbors, which are also the main acceptors of the extra electrons left on reduction. The effect of the Pd dopant on the geometric structure is very modest for CeO(2) but considerable for CeO(2-x).

Facile synthesis of hollow palladium/copper alloyed nanocubes for formic acid oxidation.

Hollow PdCu alloyed nanocubes were successfully synthesized by a novel one-pot template-free strategy through tuning the surface energy difference of the crystal planes by alloying. Compared with the solid nanoparticles, the hollow nanocubes exhibit superior electrocatalytic activity and stability for formic acid oxidation.

Interfacial properties of NM/CeO2(111) (NM = noble metal atoms or clusters of Pd, Pt and Rh): a first principles study

Results from first principles calculations present a rather clear atomic and electronic level picture of the interaction of single noble metals (NM: Pd, Pt and Rh) and the corresponding NM(4) clusters with a CeO(2)(111) surface. The most preferable adsorption sites for both the Pd and Pt adatoms are the surface O-bridge sites, while the Rh adatom prefers to stay at the O-hollow site. The Rh adatom shows much stronger interaction with the CeO(2)(111) surface than the Pd and Pt adatoms do, while the Pd adatom has the smallest adsorption energy. The dependence of the Rh/ceria interfacial properties on the value of the Hubbard U-term was tested systematically. The small clusters show stronger interaction than the corresponding single NM adatoms on the CeO(2)(111) surface. The reaction of [Formula: see text] was found for both the single NM adatoms and the small cluster adsorbate, indicating that NM adsorbates were mainly oxidized by the surface Ce ions with obvious charge transfer from NM to the CeO(2)(111) surface. The three base atoms of the small clusters that bonded with the CeO(2)(111) surface showed positive charges, while the top metal atoms of the NM(4) clusters had a small negative charge.

Structural and electronic properties of NM-doped ceria (NM = Pt, Rh): a first-principles study

The effects of noble metal (NM) dopants (NM = Pt, Rh) on the structural and electronic properties of ceria are studied using a density functional theory (DFT) method, with the inclusion of on-site Coulomb interaction (DFT + U). It is found that these NM dopants give rise to large perturbations of the atomic and electronic structures of ceria and induce metal-induced gap states at the Fermi level suitable for accommodating extra electrons, thereby lowering the reduction energy of ceria and making the NM-doped cerias more reducible than pure ceria. This mechanism for facilitating the reduction of ceria is different from that of Zr-doped ceria where the increased reducibility is largely due to the structural distortions and not to electronic modifications.

Pd1/BN as a promising single atom catalyst of CO oxidation: a dispersion-corrected density functional theory study

Single metal atom catalysts exhibit extraordinary activity in a large number of reactions, and some two-dimensional materials (such as graphene and h-BN) are found to be prominent supports to stabilize single metal atoms. The CO oxidation reaction on single Pd atoms supported by two-dimensional h-BN is investigated systematically by using dispersion-corrected density functional theory study. The great stability of the h-BN supported single Pd atoms is revealed, and the single Pd atom prefers to reside at boron vacancies. Three proposed mechanisms (Eley–Rideal, Langmuir–Hinshelwood, and a “new” termolecular Eley–Rideal) of the CO oxidation were investigated, and two of them (the traditional Langmuir–Hinshelwood mechanism and the new termolecular Eley–Rideal mechanism) are found to have rather small reaction barriers of 0.66 and 0.39 eV for their rate-limiting steps, respectively, which suggests that the CO oxidation could proceed at low temperature on single Pd atom doped h-BN. The current study will help to understand the various mechanisms of the CO oxidation and shed light on the design of CO oxidation catalysts, especially based on the concept of single metal atoms.

Preventing the CO poisoning on Pt nanocatalyst using appropriate substrate: a first-principles study

Adsorption energies and stable configurations of CO on the Pt clusters are investigated using the first-principles density-functional theory method. It is found that the adsorption of CO on the top site of the Pt4 cluster is more stable than that on the bridge site. The atomic charges are unevenly distributed within the charged Pt4 cluster, and the structural positions of the Pt atoms determine their charge states and therefore their activity. A systematic study on the effects of electrons and holes doping in the Pt4 clusters suggest an effective method to prevent the CO poisoning through regulating the total charge in Pt4 clusters. The graphene-based substrate is an ideal catalyst support, which makes the Pt catalyst lose electron and weakens the CO adsorption. The results would be of great importance for designing high active nanoscale Pt catalysts used for fuel cells.

The synergistic effects of the Cu―CeO2(111) catalysts on the adsorption and dissociation of water molecules

The interaction of water molecules with the Cu-CeO(2)(111) catalyst (Cu/CeO(2) and Cu(0.08)Ce(0.92)O(2)) is studied systematically by using the DFT+U method. Although both molecular and dissociative adsorption states of water are observed on all the considered Cu-CeO(2)(111) systems, the dissociation is preferable thermodynamically. Furthermore, the dissociation of water molecule relates to the geometric structure (e.g. whether or not there are oxygen vacancies; whether or not the reduced substrate retains a fluorite structure) and the electronic structure (e.g. whether or not there is reduced cerium, Ce(3+)) of the substrate.In addition, the adsorption of water molecules induces variations of the electronic structure of the substrate, especially for Cu/CeO(2-x)(111)-B (a Cu atom adsorbed symmetrically above the vacancy of the reduced ceria) and highly reduced Cu(0.08)Ce(0.92)O(2)(111), i.e. the Cu(0.08)Ce(0.92)O(2-x)(111)-h. The variations of electronic structure promote the dissociation of water for the highly reduced system Cu(0.08)Ce(0.92)O(2-x)(111)-h. More importantly, the improvement of WGS reaction by Cu-ceria is expected to be by the associative route through different intermediates.

Repairing sulfur vacancies in the MoS2 monolayer by using CO, NO and NO2 molecules

As-grown transition metal dichalcogenides are usually chalcogen deficient and contain a high density of chalcogen vacancies, which are harmful to the electronic properties of these materials. Based on the first-principles calculation, in this study the repairing of the S vacancy in the MoS2 monolayer has been investigated by using CO, NO and NO2 molecules. For CO and NO, the repairing process consists of the first molecule filling the S vacancy and the removing of the extra O atom by the second molecule. However, for NO2, when the molecule fills the S vacancy, it is dissociated directly to form an O-doped MoS2 monolayer. After the repair, the C, N and O-doped MoS2 monolayers can be obtained by the adsorption of CO, NO, and NO2 molecules, respectively. And in particular, the electronic properties of these materials can be significantly improved by N and O doping. Furthermore, according to the calculated energy, the process of S vacancy repairing with CO, NO and NO2 should be easily achieved at room temperature. This study presents a promising strategy for repairing MoS2 nanosheets and improving their electronic properties, which may also apply to other transition metal dichalcogenides.