Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where A.A. Alekseev is active.

Publication


Featured researches published by A.A. Alekseev.


Technical Physics | 2015

Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

A.A. Alekseev; D. A. Olyanich; T.V. Utas; V.G. Kotlyar; A. V. Zotov; A.A. Saranin

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi2(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi2 islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi2 films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi2 films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi2 film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi2(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi2(111)2 × 2 interface.


Technical Physics Letters | 2012

Formation and properties of thin films of iron silicides on Si(111) Surface: Ab initio simulation

I. A. Kuyanov; A.A. Alekseev; A. V. Zotov

Density functional theory in the generalized gradient approximation has been used to calculate the total energy and model the atomic and electronic structures of thin FeSi films with CsCl type lattice and γ-FeSi2 films with CaF2 fluorite type lattice on a Si(111) surface. It is shown that, upon the adsorption of two monolayers of iron atoms on Si(111), the most energetically favorable process is the growth of a γ-FeSi2 film with CaF2 type structure. The electronic structure of a silicide film formed upon the adsorption of one monolayer of iron atoms exhibits features that are characteristic of both FeSi and γ-FeSi2. The density of states calculated for the γ-FeSi2 well agrees with the experimental photoemission spectra reported in the literature.


Technical Physics | 2009

Ab initio computer simulation of adsorption of a Fe monolayer on Si(111)

A.A. Alekseev; I. A. Kuyanov; A. V. Zotov

Computer simulation of adsorption of an Fe monolayer on Si(111) is carried out in the generalized gradient approximation in the density functional theory. It is shown that mixing of Fe and Si atoms followed by the replacement of Si atoms and the formation of a silicide-like film containing two types of domains (with the A8 and B8 structure) takes place in the course of deposition. Analysis of the atomic structure of this compound shows that the formation of this interface makes it possible to obtain an FeSi film (with the CsCl-type structure) as well as FeSi2 film (with a CaF2-type structure).


Surface Science | 2016

Bismuth–indium two-dimensional compounds on Si(111) surface

N.V. Denisov; A.A. Alekseev; O.A. Utas; S.G. Azatyan; A.V. Zotov; A.A. Saranin


Physical Review B | 2015

Electronic band structure of a Tl/Sn atomic sandwich on Si(111)

D.V. Gruznev; L.V. Bondarenko; A.V. Matetskiy; A. Y. Tupchaya; A.A. Alekseev; C. R. Hsing; C. M. Wei; S. V. Eremeev; A.V. Zotov; A.A. Saranin


Surface Science | 2014

Structure of the Co/Si(111) 13 × 13 surface revisited

D.A. Olyanich; T.V. Utas; A.A. Alekseev; V.G. Kotlyar; A.V. Zotov; A.A. Saranin


Surface Science | 2012

First-principles study of Si(111)31×31-In reconstruction

E.N. Chukurov; A.A. Alekseev; V.G. Kotlyar; D.A. Olyanich; A.V. Zotov; A.A. Saranin


Surface Science | 2017

The (2×2) reconstructions on the surface of cobalt silicides: Atomic configuration at the annealed Co/Si(111) interface

V.G. Kotlyar; A.A. Alekseev; D.A. Olyanich; T.V. Utas; A.V. Zotov; A.A. Saranin


Surface Science | 2017

Bismuth–Indium–Sodium two-dimensional compounds on Si(111) surface

N.V. Denisov; A.A. Alekseev; O.A. Utas; S.G. Azatyan; A.V. Zotov; A.A. Saranin


Surface Science | 2016

Low-temperature one-atom-layer √7 × √7 -In phase on Si(111)

A.N. Mihalyuk; A.A. Alekseev; C. R. Hsing; C. M. Wei; D.V. Gruznev; L.V. Bondarenko; A.V. Matetskiy; A. Y. Tupchaya; A.V. Zotov; A.A. Saranin

Collaboration


Dive into the A.A. Alekseev's collaboration.

Top Co-Authors

Avatar

A.A. Saranin

Far Eastern Federal University

View shared research outputs
Top Co-Authors

Avatar

A.V. Zotov

Far Eastern Federal University

View shared research outputs
Top Co-Authors

Avatar

V.G. Kotlyar

Far Eastern Federal University

View shared research outputs
Top Co-Authors

Avatar

A.V. Matetskiy

Far Eastern Federal University

View shared research outputs
Top Co-Authors

Avatar

D.V. Gruznev

Far Eastern Federal University

View shared research outputs
Top Co-Authors

Avatar

A. V. Zotov

Russian Academy of Sciences

View shared research outputs
Top Co-Authors

Avatar

A. Y. Tupchaya

Far Eastern Federal University

View shared research outputs
Top Co-Authors

Avatar

D.A. Olyanich

Far Eastern Federal University

View shared research outputs
Top Co-Authors

Avatar

L.V. Bondarenko

Far Eastern Federal University

View shared research outputs
Top Co-Authors

Avatar

O.A. Utas

Far Eastern Federal University

View shared research outputs
Researchain Logo
Decentralizing Knowledge