A.A. Alekseev
Russian Academy of Sciences
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Featured researches published by A.A. Alekseev.
Technical Physics | 2015
A.A. Alekseev; D. A. Olyanich; T.V. Utas; V.G. Kotlyar; A. V. Zotov; A.A. Saranin
Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi2(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi2 islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi2 films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi2 films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi2 film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi2(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi2(111)2 × 2 interface.
Technical Physics Letters | 2012
I. A. Kuyanov; A.A. Alekseev; A. V. Zotov
Density functional theory in the generalized gradient approximation has been used to calculate the total energy and model the atomic and electronic structures of thin FeSi films with CsCl type lattice and γ-FeSi2 films with CaF2 fluorite type lattice on a Si(111) surface. It is shown that, upon the adsorption of two monolayers of iron atoms on Si(111), the most energetically favorable process is the growth of a γ-FeSi2 film with CaF2 type structure. The electronic structure of a silicide film formed upon the adsorption of one monolayer of iron atoms exhibits features that are characteristic of both FeSi and γ-FeSi2. The density of states calculated for the γ-FeSi2 well agrees with the experimental photoemission spectra reported in the literature.
Technical Physics | 2009
A.A. Alekseev; I. A. Kuyanov; A. V. Zotov
Computer simulation of adsorption of an Fe monolayer on Si(111) is carried out in the generalized gradient approximation in the density functional theory. It is shown that mixing of Fe and Si atoms followed by the replacement of Si atoms and the formation of a silicide-like film containing two types of domains (with the A8 and B8 structure) takes place in the course of deposition. Analysis of the atomic structure of this compound shows that the formation of this interface makes it possible to obtain an FeSi film (with the CsCl-type structure) as well as FeSi2 film (with a CaF2-type structure).
Surface Science | 2016
N.V. Denisov; A.A. Alekseev; O.A. Utas; S.G. Azatyan; A.V. Zotov; A.A. Saranin
Physical Review B | 2015
D.V. Gruznev; L.V. Bondarenko; A.V. Matetskiy; A. Y. Tupchaya; A.A. Alekseev; C. R. Hsing; C. M. Wei; S. V. Eremeev; A.V. Zotov; A.A. Saranin
Surface Science | 2014
D.A. Olyanich; T.V. Utas; A.A. Alekseev; V.G. Kotlyar; A.V. Zotov; A.A. Saranin
Surface Science | 2012
E.N. Chukurov; A.A. Alekseev; V.G. Kotlyar; D.A. Olyanich; A.V. Zotov; A.A. Saranin
Surface Science | 2017
V.G. Kotlyar; A.A. Alekseev; D.A. Olyanich; T.V. Utas; A.V. Zotov; A.A. Saranin
Surface Science | 2017
N.V. Denisov; A.A. Alekseev; O.A. Utas; S.G. Azatyan; A.V. Zotov; A.A. Saranin
Surface Science | 2016
A.N. Mihalyuk; A.A. Alekseev; C. R. Hsing; C. M. Wei; D.V. Gruznev; L.V. Bondarenko; A.V. Matetskiy; A. Y. Tupchaya; A.V. Zotov; A.A. Saranin