A. Andrei

Evidence of refractive index change by Ti indiffusion into LiNbO3 substrate as a result of multipulse free‐running ruby laser irradiation

It is shown that the multipulse free‐running ruby laser irradiation of z‐cut LiNbO3 single‐crystalline samples with 400 A‐thick Ti deposits results, under certain conditions, in an efficient Ti indiffusion with minimum perturbation. Implanted zones exhibit optical characteristics appropriate for the preparation of optical devices.

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

Summary Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10–30 mJ/cm2. The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 °C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm2 and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.

Strain-induced long range ferroelectric order and linear electro-optic effect in epitaxial relaxor thin films

Relaxor ferroelectrics have neither long range ferroelectric order nor structural transformation down to the lowest temperatures, and display isotropic optical properties like quadratic electro-optic effect. However, if an anisotropy is forced through an external agent, like electric field or uniaxial strain, a ferroelectric and structural long range order can be induced in these materials. Here, we show that epitaxial strain in relaxor ferroelectric thin films can be employed to induce a linear electro-optic effect, opening the path to new strain-controlled electro-optic materials. Epitaxial thin films with Pb1-3x/2LaxZr0.2Ti0.8O3 (x = 0.22) composition grown by pulsed laser deposition on (001) SrRuO3/SrTiO3 single crystal heterostructures become tetragonal below the susceptibility peak, which occurs at a temperature 140 K higher as compared to bulk. These films show piezoelectric properties and almost linear electro-optic behaviour.

Rolling dopant and strain in Y-doped BiFeO3 epitaxial thin films for photoelectrochemical water splitting

We report significant photoelectrochemical activity of Y-doped BiFeO3 (Y-BFO) epitaxial thin films deposited on Nb:SrTiO3 substrates. The Y-BFO photoanodes exhibit a strong dependence of the photocurrent values on the thickness of the films, and implicitly on the induced epitaxial strain. The peculiar crystalline structure of the Y-BFO thin films and the structural changes after the PEC experiments have been revealed by high resolution X-ray diffraction and transmission electron microscopy investigations. The crystalline coherence breaking due to the small ionic radius Y-addition was analyzed using Willliamson-Hall approach on the 2θ-ω scans of the symmetric (00 l) reflections and confirmed by high resolution TEM (HR-TEM) analysis. In the thinnest sample the lateral coherence length (L∥) is preserved on larger nanoregions/nanodomains. For higher thickness values L∥ is decreasing while domains tilt angles (αtilt) is increasing. The photocurrent value obtained for the thinnest sample was as high as Jph = 0.72 mA/cm2, at 1.4 V(vs. RHE). The potentiostatic scans of the Y-BFO photoanodes show the stability of photoresponse, irrespective of the film’s thickness. There is no clear cathodic photocurrent observation for the Y-BFO thin films confirming the n-type semiconductor behavior of the Y-BFO photoelectrodes.

Impact of thickness variation on structural, dielectric and piezoelectric properties of (Ba,Ca)(Ti,Zr)O 3 epitaxial thin films

It is shown that the dielectric and piezoelectric properties of Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3 (x = 0.45) (BCTZ 45) epitaxial thin films have a nontrivial dependence on film thickness. BCTZ 45 epitaxial films with different thicknesses (up to 400 nm) have been deposited on SrTiO3 by pulsed laser deposition and investigated by different combined techniques: conventional and off-axis X-ray diffraction, high resolution transmission electron microscopy and dielectric and piezoforce microscopy. The changes occurring in epitaxial films when their thickness increases have been attributed to a partial relaxation of misfit strain, driving the induced tetragonal symmetry in very thin films to the original rhombohedral symmetry of the bulk material in the thickest film, which influences directly and indirectly the dielectric and piezoelectric properties.

Fast atomic diffusion in amorphous films induced by laser pulse annealing

Fast atomic diffusion was evidenced in the surface layer of amorphous thin films of oxides and semiconductors irradiated with low fluence UV pulse laser. This process takes place in a surface layer with a thickness related to the laser radiation absorption depth in the target material and was revealed by the cross section transmission electron microscopy studies. These high values of diffusivity can be explained by supposing the glass transition transformation in the amorphous structure, triggered by the action of the laser pulse field. This effect can have application for controlling structural modifications at nanoscale of the thin films surface and also for inducing structural modification of interfaces between the film and substrate.

Pulsed laser deposition of poly(methyl methacrylate) thin films: experimental evidence by XRD, XPS, AFM, optical microscopy, Raman spectroscopy, and FTIR

We report the obtaining of thin organic films based on poly(methyl methacrylate) polymer by Pulsed Laser Deposition on silicon substrates and quartz slides. The films were characterized by complementary techniques: x-ray Diffraction, x-ray Photoelectron Spectroscopy, Atomic Force Microscopy, Optical Microscopy, Raman Spectroscopy and Fourier Transform Infrared Spectroscopy. The obtained structures are amorphous. The film composition and structure depend on both the laser fluence as well as on the temperature of the substrate during deposition. We put in evidence in freshly deposited films the presence of diamond-like carbon while its amount strongly increases by annealing at ~400°C in Argon atmosphere.

New studies of reactive pulsed laser deposition

We report the synthesis and deposition of TiC films by reactive pulsed laser deposition. Ti targets have been submitted to multipulse UV laser action in low pressure CH4. The thin films were grown on a collector placed parallel to the target. The films were characterized by electron microscopy, electron spectroscopy and nuclear techniques.

Laser treatment of a-SiC:H thin films for optoelectronic applications

Amorphous and hydrogenated (a-SiC:H) as well as crystalline silicon carbide are widespread materials for optoelectronic applications. In this paper, we studied the effect of laser/RF plasma jet treatment of a-SiC:H thin films deposited by Plasma Enhanced Chemical Vapor Deposition, on Si wafers. A Nd:YAG laser ((lambda) equals 1.06 micrometers , tFWHM equals 14 ns, E0 equals 0.015 J/pulse) was used with a fluence of 4 mJ/cm2 incident on the sample, the number of pulses being varied. Plasma treatments were performed in a plasma jet generated by a capacity coupled RF discharge in N2. Different analysis techniques were used to investigate the films, before and after the irradiation: X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy. We followed the modification of their structure and composition as an effect of the laser/plasma treatment. A comparison with the excimer and also with the RF treatments was performed.