A. B. Muchnikov
Russian Academy of Sciences
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Featured researches published by A. B. Muchnikov.
Plasma Physics Reports | 2007
A. M. Gorbachev; A. B. Muchnikov; A. L. Vikharev; D. B. Radishchev; V.A. Koldanov
A study is made of the relation between the kinetic processes involving carbon-containing species and the intensity ratios of different emission lines in synthesizing diamond films in a microwave discharge plasma. The intensity ratios of the emission lines are measured as functions of the pressure, composition, and flow rate of the gas mixture. The kinetic processes involving carbon-containing components are simulated under conditions close to the experimental ones. It is shown that the intensity ratios of different pairs of lines can be used to control diamond film deposition.
Semiconductors | 2016
E. A. Surovegina; E. V. Demidov; M. N. Drozdov; A. V. Murel; O. I. Khrykin; V. I. Shashkin; M. A. Lobaev; Alexei M. Gorbachev; A. L. Viharev; S. A. Bogdanov; V. A. Isaev; A. B. Muchnikov; V. V. Chernov; D. B. Radishchev; D. E. Batler
The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 1017 to ~1020 at cm–3 and of δ doping to the surface concentration (0.3–5) × 1013 at cm–3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.
Semiconductors | 2016
P. A. Yunin; Yu. N. Drozdov; V. V. Chernov; V. A. Isaev; S. A. Bogdanov; A. B. Muchnikov
Methods of the experimental diagnostics and control of the misorientation angle for single-crystal HPHT (High Pressure High Temperature) diamond substrates are discussed. Such substrates are used for the homoepitaxial growth of doped and undoped CVD diamond layers. The formation of singular (001) terraces on the surface of HPHT diamond after microwave-discharge-plasma etching in pure hydrogen or a hydrogen–oxygen mixture is observed. This phenomenon can be used for rapid determination of the substrate misorientation and to improve the control precision of the deviation angle during substrate polishing, or for obtaining large singular (001) areas of single-crystal diamond substrates.
Semiconductors | 2017
E. A. Surovegina; E. V. Demidov; M. N. Drozdov; A. V. Murel; O. I. Khrykin; V. I. Shashkin; M. A. Lobaev; A. M. Gorbachev; A. L. Viharev; S. A. Bogdanov; V. A. Isaev; A. B. Muchnikov; V. V. Chernov; D. B. Radishchev; J. E. Batler
The name of the last author should read J. E. Batler.
Physica Status Solidi-rapid Research Letters | 2016
A. L. Vikharev; A. M. Gorbachev; M. A. Lobaev; A. B. Muchnikov; D.B. Radishev; V. A. Isaev; V. V. Chernov; S.A. Bogdanov; M. N. Drozdov; J.E. Butler
Materials Letters | 2015
O. A. Ivanov; A. B. Muchnikov; V. V. Chernov; S. A. Bogdanov; A. L. Vikharev; J.E. Butler
Chemical Vapor Deposition | 2014
Sergey Bogdanov; A. L. Vikharev; Aleksei Gorbachev; A. B. Muchnikov; D.B. Radishev; Nikolai Ovechkin; V.V. Parshin
Physica Status Solidi (a) | 2015
A. B. Muchnikov; A. L. Vikharev; J.E. Butler; V. V. Chernov; V. A. Isaev; S. A. Bogdanov; A. I. Okhapkin; P. A. Yunin; Yu. N. Drozdov
Physica Status Solidi-rapid Research Letters | 2017
James E. Butler; A. L. Vikharev; Alexei M. Gorbachev; M. A. Lobaev; A. B. Muchnikov; Dmitry Radischev; V. A. Isaev; V. V. Chernov; Sergey Bogdanov; Mikail Drozdov; Evgeniy A. Demidov; Ekaterina Surovegina; Vladimir I. Shashkin; Albert V. Davydov; Haiyan Tan; Louisa Meshi; Alexander C. Pakpour-Tabrizi; Marie-Laure Hicks; Richard B. Jackman
Journal of Crystal Growth | 2016
A. B. Muchnikov; D.B. Radishev; A. L. Vikharev; Alexei M. Gorbachev; Anatoly V. Mitenkin; M. N. Drozdov; Yuri N. Drozdov; P. A. Yunin
