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Dive into the research topics where V. V. Chernov is active.

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Featured researches published by V. V. Chernov.


Semiconductors | 2016

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

E. A. Surovegina; E. V. Demidov; M. N. Drozdov; A. V. Murel; O. I. Khrykin; V. I. Shashkin; M. A. Lobaev; Alexei M. Gorbachev; A. L. Viharev; S. A. Bogdanov; V. A. Isaev; A. B. Muchnikov; V. V. Chernov; D. B. Radishchev; D. E. Batler

The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 1017 to ~1020 at cm–3 and of δ doping to the surface concentration (0.3–5) × 1013 at cm–3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.


Semiconductors | 2016

Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates

P. A. Yunin; Yu. N. Drozdov; V. V. Chernov; V. A. Isaev; S. A. Bogdanov; A. B. Muchnikov

Methods of the experimental diagnostics and control of the misorientation angle for single-crystal HPHT (High Pressure High Temperature) diamond substrates are discussed. Such substrates are used for the homoepitaxial growth of doped and undoped CVD diamond layers. The formation of singular (001) terraces on the surface of HPHT diamond after microwave-discharge-plasma etching in pure hydrogen or a hydrogen–oxygen mixture is observed. This phenomenon can be used for rapid determination of the substrate misorientation and to improve the control precision of the deviation angle during substrate polishing, or for obtaining large singular (001) areas of single-crystal diamond substrates.


Semiconductors | 2017

Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

E. A. Surovegina; E. V. Demidov; M. N. Drozdov; A. V. Murel; O. I. Khrykin; V. I. Shashkin; M. A. Lobaev; A. M. Gorbachev; A. L. Viharev; S. A. Bogdanov; V. A. Isaev; A. B. Muchnikov; V. V. Chernov; D. B. Radishchev; J. E. Batler

The name of the last author should read J. E. Batler.


Journal of Optical Technology | 2011

Resonance laser spectroscopy of ion pairs in a Nd 3+ : LaF 3 crystal

R. A. Akhmedzhanov; A. A. Bondartsev; L. A. Gushchin; V. V. Chernov

This paper shows that the satellite lines that appear in the absorption and fluorescence spectra of neodymium ions in a LaF 3 crystal at concentrations of about 0.5 at.% and the accompanying lines of the isolated ion are caused by pairwise interaction of the Nd 3+ ions. Double optical resonance is used to study the structure of the satellite lines in the neighborhood of the 4 I 9/2 → 4 G 5/2 transition of the isolated ion (wavelength 5777.1 A), hidden by inhomogeneous broadening. When neodymium ion pairs are excited by resonance laser radiation, the presence of anti-Stokes components is recorded in the fluorescence spectrum (up-conversion). It is shown that the main up-conversion mechanism is cumulative pair excitation. These results are convincing evidence that the suppression of absorption from excited levels can be experimentally observed in condensed media.


Physica Status Solidi-rapid Research Letters | 2016

Novel microwave plasma‐assisted CVD reactor for diamond delta doping

A. L. Vikharev; A. M. Gorbachev; M. A. Lobaev; A. B. Muchnikov; D.B. Radishev; V. A. Isaev; V. V. Chernov; S.A. Bogdanov; M. N. Drozdov; J.E. Butler


Materials Letters | 2015

Experimental study of hydrogen plasma etching of (1 0 0) single crystal diamond in a MPACVD reactor

O. A. Ivanov; A. B. Muchnikov; V. V. Chernov; S. A. Bogdanov; A. L. Vikharev; J.E. Butler


Physica Status Solidi (a) | 2015

Homoepitaxial growth of CVD diamond after ICP pretreatment

A. B. Muchnikov; A. L. Vikharev; J.E. Butler; V. V. Chernov; V. A. Isaev; S. A. Bogdanov; A. I. Okhapkin; P. A. Yunin; Yu. N. Drozdov


Physica Status Solidi-rapid Research Letters | 2017

Nanometric diamond delta doping with boron

James E. Butler; A. L. Vikharev; Alexei M. Gorbachev; M. A. Lobaev; A. B. Muchnikov; Dmitry Radischev; V. A. Isaev; V. V. Chernov; Sergey Bogdanov; Mikail Drozdov; Evgeniy A. Demidov; Ekaterina Surovegina; Vladimir I. Shashkin; Albert V. Davydov; Haiyan Tan; Louisa Meshi; Alexander C. Pakpour-Tabrizi; Marie-Laure Hicks; Richard B. Jackman


Physica Status Solidi (a) | 2015

Electron emission amplification of cold cathode by two‐layer diamond coating

O. A. Ivanov; A. M. Gorbachev; A. L. Vikharev; M. A. Lobaev; V. A. Isaev; V. V. Chernov


Physica Status Solidi-rapid Research Letters | 2014

Delta-layer doping profile in diamond providing high carrier mobility

V. A. Kukushkin; G. Snider; S.A. Bogdanov; V. V. Chernov

Collaboration


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A. L. Vikharev

Russian Academy of Sciences

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V. A. Isaev

Russian Academy of Sciences

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M. A. Lobaev

Russian Academy of Sciences

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A. B. Muchnikov

Russian Academy of Sciences

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A. M. Gorbachev

Russian Academy of Sciences

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S. A. Bogdanov

Russian Academy of Sciences

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M. N. Drozdov

Russian Academy of Sciences

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J.E. Butler

Russian Academy of Sciences

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O. A. Ivanov

Russian Academy of Sciences

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P. A. Yunin

Russian Academy of Sciences

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