A. Baghizadeh

Peculiar Magnetoelectric Coupling in BaTiO3:Fe113 ppm Nanoscopic Segregations

We report polycrystalline BaTiO3 with cooperative magnetization behavior associated with the scarce presence of about 113 atomic ppm of Fe ions, clearly displaying magnetoelectric coupling with significant changes in magnetization (up to ΔM/M ≈ 32%) at the ferroelectric transitions. We find that Fe ions are segregated mostly at the interfaces between grain boundaries and an Fe-rich phase, forming a self-composite with high magnetoelectric coupling above room temperature. We compare our results with ab initio calculations and other experimental results found in the literature, proposing mechanisms that could be behind the magnetoelectric coupling within the ferroelectric matrix. These findings open the way for further strategies to optimize interfacial magnetoelectric couplings.

Interaction of multiferroic properties and interfaces in hexagonal LuMnO3 ceramics

A study on the underlying interaction mechanisms between lattice constants, magnetic and dielectric properties with inhomogeneities or internal interfaces in hexagonal, off-stoichiometric LuMnO3 oxide is presented. By increasing Mn content the a-axis constant and volume of the unit cell, the antiferromagnetic (AFM) Neel temperature, T N, and frustration factor of the frustrated Mn3+ trimmers in basal plane show decreasing trends. It was found that increasing the annealing time improves the properties of the lattices and progressively eliminates secondary phases for compositions within the solid solution stability limits. A magnetic contribution below T N is observed for all samples. Two regimes of magnetization below and above 45 K were observed in the AFM state. The magnetic contribution below T N is assigned to either the secondary phase or internal interfaces like ferroelectric (FE) domain walls. Magneto-dielectric coupling at T N is preserved in off-stoichiometric ceramics. The presence of a low temperature anomaly of the dielectric constant is correlated to the composition of the solid solution in off-stoichiometric ceramics. Large FE domains are observed in piezoresponse force microscopy (PFM) images of doped and un-doped ceramics, whereas atomic structure analysis indicates the parallel formation of nano-sized FE domains. A combination of measured properties and microscopy images of micron- and nano-sized domains ascertain the role of lattice distortion and stability of solid solution on multiferroic properties.

Development of ferroelectric domains and topological defects in vacancy doped ceramics of h-LuMnO3

Self-doping of the h-LuMnxO3±δ (0.92 ≤ x ≤ 1.12) phase and changes in the sintering time are applied to investigate the formation and annihilation of antiphase ferroelectric (FE) domains in bulk ceramics. The increase in the annealing time in sintering results in growth of FE domains, which depends on the type of vacancy, 6-fold vortices with dimensions of the order of 20 μm being observed. Interference of planar defects of the lattice with the growth of topological defects shows breaking of 6-fold symmetry in the self-doped ceramics. The role of grain boundaries in the development of topological defects has been studied. Dominance of the atypical FE domain network in very defective h-LuMnxO3±δ lattices saturated with Mn vacancies (x < 1) was also identified in the current study. After a long annealing time, scattered closed-loops of nano-dimensions are often observed isolated inside large FE domains with opposite polarization. Restoring of the polarization after alternative poling with opposite electrical fields is observed in FE domains. Stress/strain in the lattice driven by either planar defects or chemical inhomogeneity results in FE polarization switching on the nanoscale and further formation of nano-vortices, with detailed investigation being carried out by electron microscopy. Pinning of FE domains to planar defects is explored in the present microscopy analysis, and nano-scale observation of lattices is used to explain features of the ferroelectricity revealed in Piezo Force Microscopy images of the ceramics.Self-doping of the h-LuMnxO3±δ (0.92 ≤ x ≤ 1.12) phase and changes in the sintering time are applied to investigate the formation and annihilation of antiphase ferroelectric (FE) domains in bulk ceramics. The increase in the annealing time in sintering results in growth of FE domains, which depends on the type of vacancy, 6-fold vortices with dimensions of the order of 20 μm being observed. Interference of planar defects of the lattice with the growth of topological defects shows breaking of 6-fold symmetry in the self-doped ceramics. The role of grain boundaries in the development of topological defects has been studied. Dominance of the atypical FE domain network in very defective h-LuMnxO3±δ lattices saturated with Mn vacancies (x < 1) was also identified in the current study. After a long annealing time, scattered closed-loops of nano-dimensions are often observed isolated inside large FE domains with opposite polarization. Restoring of the polarization after alternative poling with opposite electrica...

Giant Strain and Induced Ferroelectricity in Amorphous BaTiO3 Films under Poling

We report an effect of giant surface modification of a 5.6 nm thick BaTiO3 film grown on Si (100) substrate under poling by conductive tip of a scanning probe microscope (SPM). The surface can be locally elevated by about 9 nm under −20 V applied during scanning, resulting in the maximum strain of 160%. The threshold voltage for the surface modification is about 12 V. The modified topography is stable enough with time and slowly decays after poling with the rate ~0.02 nm/min. Strong vertical piezoresponse after poling is observed, too. Combined measurements by SPM and piezoresponse force microscopy (PFM) prove that the poled material develops high ferroelectric polarization that cannot be switched back even under an oppositely oriented electric field. The topography modification is hypothesized to be due to a strong Joule heating and concomitant interface reaction between underlying Si and BaTiO3. The top layer is supposed to become ferroelectric as a result of local crystallization of amorphous BaTiO3. This work opens up new possibilities to form nanoscale ferroelectric structures useful for various applications.