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Featured researches published by A. Benali.


Nano Letters | 2016

GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy

Xin Guan; Jeanne Becdelievre; Benjamin Meunier; A. Benali; G. Saint-Girons; Romain Bachelet; Philippe Regreny; Claude Botella; G. Grenet; Nicholas Blanchard; X. Jaurand; Mathieu G. Silly; Fausto Sirotti; Nicolas Chauvin; M. Gendry; J. Penuelas

We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures.


Energy Procedia | 2014

Optical Simulation of Multijunction Solar Cells Based on III-V Nanowires on Silicon☆

A. Benali; J. Michallon; Philippe Regreny; Emmanuel Drouard; Pedro Rojo Romeo; Nicolas Chauvin; D. Bucci; Alain Fave; Anne Kaminski-Cachopo; M. Gendry


Applied Surface Science | 2017

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

Jose Carlos Piñero; D. Araújo; C.E. Pastore; M. Gutierrez; C. Frigeri; A. Benali; J.F. Lelièvre; M. Gendry


Nanoscale | 2016

GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

Xin Guan; Jeanne Becdelievre; A. Benali; Claude Botella; G. Grenet; Philippe Regreny; Nicolas Chauvin; Nicholas Blanchard; X. Jaurand; G. Saint-Girons; Romain Bachelet; M. Gendry; J. Penuelas


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Applied Surface Science | 2017

シリコン上に成長させた閃亜鉛鉱型GaAsナノワイヤにおける双晶と歪緩和【Powered by NICT】

Jose Carlos Piñero; D. Araújo; C.E. Pastore; M. Gutierrez; C. Frigeri; A. Benali; J.F. Lelièvre; M. Gendry


Optical simulation of absorption in tandem solar cells based on III-V nanowires on silicon | 2016

Optical simulation of absorption in tandem solar cells based on III-V nanowires on silicon

Anne Kaminski-Cachopo; Vladimir Maryasin; D. Bucci; J. Michallon; A. Benali; Emmanuel Drouard; M. Gendry; Quentin Rafhay; Alain Fave


GaAs nanowires with oxidation-proof arsenic capping for the growth of heteroepitaxial shell | 2016

GaAs nanowires with oxidation-proof arsenic capping for the growth of heteroepitaxial shell

Xin Guan; Jeanne Becdelievre; Benjamin Meunier; A. Benali; G. Saint-Girons; Romain Bachelet; Philippe Regreny; Claude Botella; G. Grenet; Nicholas Blanchard; X. Jaurand; Mathieu G. Silly; Fausto Sirotti; Nicolas Chauvin; M. Gendry; J. Penuelas


Comparaison du Ga et de Au comme catalyseurs pour la croissance de nanofils GaAs sur silicium | 2016

Comparaison du Ga et de Au comme catalyseurs pour la croissance de nanofils GaAs sur silicium

Louise Fouquat; Xin Guan; Benjamin Meunier; Jeanne Becdelievre; A. Benali; Philippe Regreny; Aziz Benamrouche; Claude Botella; G. Grenet; Mathieu G. Silly; Fausto Sirotti; M. Gendry; J. Penuelas


Self-catalyzed growth of GaAs nanowires on silicon for tandem solar cells | 2015

Self-catalyzed growth of GaAs nanowires on silicon for tandem solar cells

A. Benali; J. Michallon; Philippe Regreny; Emmanuel Drouard; Pedro Rojo Romeo; Nicolas Chauvin; Alain Fave; G. Patriarche; Anne Kaminski-Cachopo; M. Gendry

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M. Gendry

Institut des Nanotechnologies de Lyon

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Philippe Regreny

Institut des Nanotechnologies de Lyon

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Nicolas Chauvin

Institut des Nanotechnologies de Lyon

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Alain Fave

Institut des Nanotechnologies de Lyon

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Anne Kaminski-Cachopo

Institut des Nanotechnologies de Lyon

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Claude Botella

Institut des Nanotechnologies de Lyon

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Emmanuel Drouard

Institut des Nanotechnologies de Lyon

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G. Grenet

Institut des Nanotechnologies de Lyon

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J. Michallon

Centre national de la recherche scientifique

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J. Penuelas

Institut des Nanotechnologies de Lyon

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