A.C. Kleimann
Philips
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Featured researches published by A.C. Kleimann.
IEEE Transactions on Electron Devices | 1991
Jan T. Bosiers; A.C. Kleimann; Bart Dillen; Herman L. Peek; Andre L. Kokshoorn; Noortje J. Daemen; A.G. van der Sijde; L.T. van Gaal
The authors present a high-resolution frame-transfer charge-coupled-device (CCD) suitable for S-VHS camcorders with an additional full-resolution true electronic still picture (ESP) mode of operation. The CCD sensor is composed of an image section, an intermediate readout register, a storage section, and a second readout register. A resolution of 450 TV lines (H) is obtained in color images by applying cyan-green-yellow complementary stripe color filters on the 1187(H)*581(V) pixels. The operation of the sensor in both conventional video and ESP modes is described. Special attention is paid to the 3-D potential calculations required to obtain a design guaranteeing a high-quality picture. Experimental results are presented. >
IEEE Transactions on Electron Devices | 2002
J.T. Bosiers; A.C. Kleimann; H. van Kuijk; L. Le Cam; Herman L. Peek; Joris P. Maas; Albert J. P. Theuwissen
Digital still cameras are becoming a widely used alternative for conventional silver-halide cameras. This paper presents first the concept of frame-transfer CCD imagers designed for consumer digital cameras. Next, the different modes of operation are explained in detail and compared with alternative approaches. Finally, extensive evaluation results on four different imagers using this new concept are presented. It will be demonstrated that the flexible modes of operation, the high dynamic range, and excellent optical properties of FT-CCDs make them very suited for this type of electronic imaging.
IEEE Transactions on Electron Devices | 2009
E. W. Bogaart; W. Hoekstra; I. M. Peters; A.C. Kleimann; Jan Theodoor Jozef Bosiers
Very low dark current in charge-coupled-device image sensors is established by means of multipinned phase combined with vertical antiblooming, so-called all-gates pinning. Hereby, dark-current generation at the surface and diffusion from the bulk are suppressed. Using a conventional 6 times 6 mum2 image pixel with an additional n-type implant, a dark-current level of 1.5 pA/cm2 is obtained at 60degC without loss of optical performance. This means that the pixel dark current is reduced by a factor 80.
international electron devices meeting | 2000
H.C. van Kuijk; Jan Theodoor Jozef Bosiers; A.C. Kleimann; L. Le Cam; Joris P. Maas; Herman L. Peek; C.R. Peschel
Sensitivity improvements in a 3.2 M-pixel CCD image sensor developed for digital still camera applications are presented. The introduction of gap-less microlenses increases the sensitivity with 25-30% while the high angular response is maintained. With the binning possibility at the image-storage transition, the sensitivity in monitor mode can be increased. Finally the sensor output amplifier now combines low noise and excellent linearity with a much higher conversion factor. This improvement is obtained by reduced parasitic capacitances around the Floating Diffusion area.
international electron devices meeting | 1988
Jan T. Bosiers; B. Dillen; Cornelis Antonie Maria Jaspers; A.C. Kleimann; Andre L. Kokshoorn; Herman L. Peek; M.J.H. van de Steeg
A high-resolution frame-transfer CCD (charge coupled device) imager for NTSC standards was developed for use in both conventional movie mode and electronic still picture mode. The requirements for these modes of operation are illustrated. The CCD structure consists of an image section, an intermediate output register, a storage section and a second output register. Operation of the sensor in both modes is described. Special attention is paid to the 3-D potential calculations required to obtain a design guaranteeing a high-quality picture. Experimental results are presented.<<ETX>>
international electron devices meeting | 1995
G. Kreider; Jan T. Bosiers; B. Dillen; J. van der Heijden; W. Hoekstra; A.C. Kleimann; P. Opmeer; J.M.A.M. Oppers; Herman L. Peek; R. Pellens; Albert J. P. Theuwissen
A 1 K/spl times/2 K full frame sensor demonstrates a new modular sensor design. Each imager in the family is built from smaller, abutable blocks which are exposed in the correct position during lithography. These blocks can be stacked to form sensors of arbitrary size, all based on the same pixel structure. These pixels have a high charge handling capability, vertical anti-blooming, electronic shuttering, a high light sensitivity, and low dark current.
international electron devices meeting | 2008
E.-J.P. Manoury; Wilco Klaassens; H.C. van Kuijk; L.H. Meessen; A.C. Kleimann; E.W. Bogaart; Inge M. Peters; H. Stoldt; M. Koyuncu; Jan Theodoor Jozef Bosiers
A 48 M-pixel, 6 k times 8 k, 36 times 48 mm2 full-frame CCD imager was developed for professional digital SLR cameras and digital camera backs. Compared to the previous generation CCD, the pixel area was reduced by 30% from 7.2times7.2 mum2 to 6.0 times 6.0 mum2 to meet the demands for higher resolution. Still, by improvements in technology and design, the SNR under identical exposure conditions was increased by 30%.
IEEE Transactions on Electron Devices | 1995
Jan T. Bosiers; Edwin Roks; Herman L. Peek; A.C. Kleimann; A.G. van der Sijde
international electron devices meeting | 2004
Inge M. Peters; A.C. Kleimann; Frank Polderdijk; Wilco Klaassens; Raymond Frost; Jan T. Bosiers
international solid-state circuits conference | 2002
L. Le Cam; Jan Theodoor Jozef Bosiers; A.C. Kleimann; H.C. van Kuijk; Joris P. Maas; M.J. Beenhakkers; Herman L. Peek; P.C.V. de Rijt; Albert J. P. Theuwissen