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Dive into the research topics where A. Čerškus is active.

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Featured researches published by A. Čerškus.


international kharkov symposium on physics and engineering of microwaves, millimeter, and submillimeter waves | 2010

Temperature dependence of the detected voltage of planar microwave diode that operation is based on carrier heating phenomena in strong electric field

Algirdas Suziedelis; Steponas Ašmontas; Jonas Gradauskas; J. Kundrotas; V. Kazlauskaite; A. Čerškus; V. Derkach; R. Golovashchenko; E. Goroshko; V.G. Korzh; Tomas Anbinderis

Microwave (MW) detectors operating on the basis of charge carrier heating phenomena in semiconductor structures attracts attention of researchers due to the possibility to use such detectors in a wide frequency range. The voltage detected in the devices consists of hot carrier electromotive force arising over the contacts of the structure having n-n+ (or p-p+) junction. Planar design of the microwave diode enabled us to measure the power of electromagnetic radiation from microwaves up to infrared region [1]. The measurements were performed at room temperature, while, the decrease of crystal lattice temperature increases voltage sensitivity of the MW [2]. This increase is caused by an electron mobility and energy relaxation time increase in a high resistivity semiconductor. The sensitivity increase is also influenced by charge carrier density decrease due to their freeze-out at low temperatures. However in a number of applications flat dependence of voltage sensitivity on temperature is preferred. As it is well known, the electron mobility and energy relaxation time depend slightly on temperature in low resistivity semiconductors [3]. Moreover, carrier density in degenerated semiconductors does not depend on temperature. However, carrier heating in degenerated semiconductors encounters phonon assisted difficulties. We have recently demonstrated the ability to detect microwave radiation with planar microwave diode on the base of n-n+ junction with low resistivity n-GaAs at room temperature [4].


Lithuanian Journal of Physics | 2011

Photoluminescence characterisation of GaAs/AlGaAs structures designed for microwave and terahertz detectors

A. Čerškus; J. Kundrotas; Viktorija Nargelienė; A. Sužiedėlis; Steponas Ašmontas; Jonas Gradauskas; A. Johannessenc; E. Johannessen


Acta Physica Polonica A | 2011

Enhancement of the Excitonic Photoluminescence in n^{+}/i-GaAs by Controlling the Thickness and Impurity Concentration of the n^{+} Layer

A. Čerškus; Viktorija Nargelienė; J. Kundrotas; A. Sužiedėlis; Steponas Ašmontas; Jonas Gradauskas; A. Johannessen; E. Johannessen


Acta Physica Polonica A | 2011

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

Viktorija Nargelienė; Steponas Ašmontas; A. Čerškus; Jonas Gradauskas; J. Kundrotas; A. Sužiedėlis


Lithuanian Journal of Physics | 2009

Enhancement of excitonic photoluminescence in silicon-dopedn+/i-GaAs structures

V. Kazlauskaitė; A. Sužiedėlis; A. Čerškus; Jonas Gradauskas; Steponas Ašmontas; J. Kundrotas


Lithuanian Journal of Physics | 2015

Dynamics of free carriers – neutral impurity related optical transitions in Be and Si δ-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach

J. Kundrotas; A. Čerškus; Gintaras Valušis; E. H. Linfield; E. Johannessen; Agnė Johannessen


Lithuanian Journal of Physics | 2018

Planar asymmetric dual diode for millimetre wave detection and power measurement

A. Sužiedėlis; Steponas Ašmontas; Jonas Gradauskas; A. Šilėnas; A. Čerškus; A. Lučun; Č. Paškevič; M. Anbinderis; O. Žalys


Applied Physics A | 2018

Photoluminescence peculiarities of epitaxial structure with 2DEG layer designed for microwave detectors

A. Čerškus; A. Sužiedėlis; A. Lučun; M. Anbinderis; Jonas Gradauskas; E. Šutinys


2017 Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL) | 2017

Pulsed microwave sensor on heavily doped semiconductor substrate

Algirdas Suziedelis; Steponas Ašmontas; Jonas Gradauskas; A. Silenas; A. Lučun; A. Čerškus; Č. Paškevič; O. Zalys; M. Anbinderis


Applied Physics A | 2015

Peculiarities of photoluminescence of vertical n+/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors

A. Čerškus; J. Kundrotas; A. Sužiedėlis; Jonas Gradauskas; Steponas Ašmontas; Eric Johannessen; Agne Johannessen

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Jonas Gradauskas

Vilnius Gediminas Technical University

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A. Sužiedėlis

Vilnius Gediminas Technical University

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Benas Kundrotas

Vilnius Gediminas Technical University

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Roma Rinkevičienė

Vilnius Gediminas Technical University

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Algirdas Suziedelis

Vilnius Gediminas Technical University

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E. Johannessen

University College of Southeast Norway

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Agne Johannessen

Buskerud and Vestfold University College

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Eric Johannessen

Buskerud and Vestfold University College

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