E. H. Linfield

Terahertz semiconductor-heterostructure laser

Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1–10 THz; 1 THz = 1012 Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications—for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low-consumption, solid-state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm-2 up to 50 K. These results are very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.

Terahertz pulse imaging in reflection geometry of human skin cancer and skin tissue

We demonstrate the application of terahertz pulse imaging (TPI) in reflection geometry for the study of skin tissue and related cancers both in vitro and in vivo. The sensitivity of terahertz radiation to polar molecules, such as water, makes TPI suitable for studying the hydration levels in the skin and the determination of the lateral spread of skin cancer pre-operatively. By studying the terahertz pulse shape in the time domain we have been able to differentiate between diseased and normal tissue for the study of basal cell carcinoma (BCC). Basal cell carcinoma has shown a positive terahertz contrast, and inflammation and scar tissue a negative terahertz contrast compared to normal tissue. In vivo measurements on the stratum corneum have enabled visualization of the stratum corneum-epidermis interface and the study of skin hydration levels. These results demonstrate the potential of terahertz pulse imaging for the study of skin tissue and its related disorders, both in vitro and in vivo.

Terahertz spectroscopy of explosives and drugs

Terahertz frequency radiation possesses a unique combination of desirable properties for noninvasive imaging and spectroscopy of materials. This includes the ability to obtain chemical and structural information about substances concealed within dry packaging, such as paper, plastics, and cardboard. As a result, the application of terahertz frequency spectroscopy for the sensing and identification of materials of security interest, such as explosives and, to a lesser extent, drugs-of-abuse, has caught the attention of a number of researchers and security agencies. We describe terahertz time-domain spectroscopy and examine the terahertz spectra of a wide range of drugs-of-abuse, pure explosives, and plastic explosives.

Terahertz Pulsed Imaging of Skin Cancer in the Time and Frequency Domain

Terahertz Pulsed Imaging(TPI) is a new medical imaging modality forthe detection of epithelial cancers. Overthe last two years this technique has beenapplied to the study of in vitrobasal cell carcinoma (BCC). Usingtime-domain analysis the contrast betweendiseased and normal tissue has been shownto be statistically significant, andregions of increased terahertz (THz)absorption correlated well with thelocation of the tumour sites in histology.Understanding the source of this contrastthrough frequency-domain analysis mayfacilitate the diagnosis of skin cancer andrelated skin conditions using TPI. Wepresent the first frequency-domain analysisof basal cell carcinoma in vitro,with the raw power spectrum giving aninsight into the surface features of theskin. Further data manipulation is requiredto determine whether spectral informationcan be extrapolated at depth. These resultshighlight the complexity of working inreflection geometry.

Electrically pumped photonic-crystal terahertz lasers controlled by boundary conditions.

Semiconductor lasers based on two-dimensional photonic crystals generally rely on an optically pumped central area, surrounded by un-pumped, and therefore absorbing, regions. This ideal configuration is lost when photonic-crystal lasers are electrically pumped, which is practically more attractive as an external laser source is not required. In this case, in order to avoid lateral spreading of the electrical current, the device active area must be physically defined by appropriate semiconductor processing. This creates an abrupt change in the complex dielectric constant at the device boundaries, especially in the case of lasers operating in the far-infrared, where the large emission wavelengths impose device thicknesses of several micrometres. Here we show that such abrupt boundary conditions can dramatically influence the operation of electrically pumped photonic-crystal lasers. By demonstrating a general technique to implement reflecting or absorbing boundaries, we produce evidence that whispering-gallery-like modes or true photonic-crystal states can be alternatively excited. We illustrate the power of this technique by fabricating photonic-crystal terahertz (THz) semiconductor lasers, where the photonic crystal is implemented via the sole patterning of the device top metallization. Single-mode laser action is obtained in the 2.55–2.88 THz range, and the emission far field exhibits a small angular divergence, thus providing a solution for the quasi-total lack of directionality typical of THz semiconductor lasers based on metal–metal waveguides.

2.9THz quantum cascade lasers operating up to 70K in continuous wave

We report the operation of a quantum cascade laser emitting at a 103μm wavelength (2.9THz). The active region is based on a bound-to-continuum design allowing a low parasitic leakage current, and a high upper-to-lower-state lifetime ratio. The latter is demonstrated by a pronounced decrease of the differential resistance at threshold, which is visible up to high temperatures, and by a weak temperature dependence of the slope efficiency. At 4K, we report a threshold current density of only 105A∕cm2 both in pulsed and continuous-wave operation, and an emitted peak power of 15mW independent of the duty cycle. Maximum operating temperatures of 95K and 70K are observed in pulsed and continuous wave modes, respectively.

Low-threshold terahertz quantum-cascade lasers

A quantum-cascade laser operating at λ=66 μm is demonstrated. It consists of a three-quantum-well chirped-superlattice active region embedded in a waveguide based on a single interface plasmon and a buried contact. A threshold current density of 210 A/cm2 at T=12 K, a maximum peak optical power of 4 mW, and operation up to T=44 K are achieved in a 2.7 mm long device with a high reflectivity backfacet coating.

Terahertz quantum cascade lasers with copper metal-metal waveguides operating up to 178 K

We report terahertz quantum cascade lasers operating in pulsed mode at an emission frequency of 3 THz and up to a maximum temperature of 178 K. The improvement in the maximum operating temperature is achieved by using a three-quantum-well active region design with resonant-phonon depopulation and by utilizing copper, instead of gold, for the cladding material in the metal-metal waveguides.

Far-infrared (λ≃87 μm) bound-to-continuum quantum-cascade lasers operating up to 90 K

We report terahertz frequency (3.5 THz, λ≃87 μm) emission from quantum-cascade lasers employing a bound-to-continuum transition in the active region. The maximum operating temperature is in excess of 90 K. Peak powers of 20 mW at 20 K and 10 mW at 77 K are achieved. The same devices show continuous-wave operation up to 55 K with measured optical powers of 15 mW at 10 K.

Optimization of photomixers and antennas for continuous-wave terahertz emission

We have studied terahertz emission from interdigitated finger photomixers coupled to planar antenna structures. Using both pulsed and continuous-wave excitation, polarization measurements reveal that the antenna design dominates the properties of the radiated output at frequencies below 0.6 THz, while the efficiency at higher frequencies is additionally dependent on the design of the photomixer fingers. We have produced terahertz maps of the device, characterizing the photomixer by measuring the generated power as a function of the excitation position. Together, these measurements have allowed us to understand better the distinct roles of the photomixer and antenna in emission at different frequencies and, hence, independently optimize these components.