A. Dréau

Avoiding power broadening in optically detected magnetic resonance of single NV defects for enhanced dc magnetic field sensitivity

We report a systematic study of the magnetic field sensitivity of a magnetic sensor consisting of a single nitrogen-vacancy (NV) defect in diamond, by using continuous optically detected electron spin resonance (ESR) spectroscopy. We first investigate the behavior of the ESR contrast and linewidth as a function of the microwave and optical pumping power. The experimental results are in good agreement with a simplified model of the NV defect spin dynamics, leading to an optimized sensitivity around

Engineered arrays of nitrogen-vacancy color centers in diamond based on implantation of CN− molecules through nanoapertures

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High-resolution spectroscopy of single NV defects coupled with nearby13C nuclear spins in diamond

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Single-shot readout of multiple nuclear spin qubits in diamond under ambient conditions.

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Storage and retrieval of a microwave field in a spin ensemble

for a single NV defect in a high-purity diamond crystal grown by chemical vapor deposition. We then demonstrate an enhancement of the magnetic sensitivity by one order of magnitude by using a simple pulsed-ESR scheme. This technique is based on repetitive excitation of the NV defect with a resonant microwave

Illustration of quantum complementarity using single photons interfering on a grating

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Free induction decay of single spins in diamond

pulse followed by an optimized readout laser pulse, allowing to fully eliminate power broadening of the ESR linewidth. The achieved sensitivity is similar to that obtained by using Ramsey-type sequences, which is the optimal magnetic field sensitivity for the detection of a dc magnetic field.

Probing the dynamics of a nuclear spin bath in diamond through time-resolved central spin magnetometry.

We report a versatile method for engineering arrays of nitrogen-vacancy (NV) color centers in diamond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in a polymethyl methacrylate (PMMA) layer deposited on a diamond surface. The implantation was performed with CN− molecules that increased the NV defect-formation yield. This method could enable the realization of a solid-state coupled-spin array and could be used for positioning an optically active NV center on a photonic microstructure.

Quantum frequency conversion to telecom of single photons from a nitrogen-vacancy center in diamond

We report a systematic study of the hyperfine interaction between the electron spin of a single nitrogen-vacancy (NV) defect in diamond and nearby

Afshar's experiment revisited: a demonstration of Bohr's complementary principle

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