A. E. Muslimov

Specific features of the formation of terrace-step nanostructures on the (0001) surface of sapphire crystals

The terrace-step structures on atomically smooth vicinal surfaces of sapphire crystals subjected to thermal annealing after mechanical and chemical treatments have been investigated by atomic-force microscopy. The influence of the vicinal angles and conditions of thermal treatment (including annealings in air and vacuum) of sapphire plates on the metric parameters of terrace-step structures has been analyzed. It is shown that steps with a height from monoatomic (0.22 nm) to 3 nm or more can be formed on the sapphire surface by changing the vicinal angle and thermal-treatment conditions. The results are interpreted in terms of the minimum surface energy and surface diffusion processes.

Ordered gold nanostructures on sapphire surfaces: Fabrication and optical investigations

The possibilities of obtaining ordered gold nanoarrays on sapphire surfaces with oriented nanorelief are demonstrated. The structures are morphologically described using atomic force microscopy data. A study of the angular dependence of the reflectivity in the visible range of electromagnetic waves has revealed some features which are likely to indicate surface plasmon-polariton excitation at the air-gold interface under exposure to p-polarized radiation. The experimental results are found to be in good agreement with the theoretical calculations.

Specific features of the growth of AIIBVI films on (0001)Al2O3 substrates

The structure and orientation of CdTe and ZnO films on sapphire have been investigated for different techniques of pregrowth substrate treatment. Polycrystalline CdTe films are found to grow of substrates unannealed or annealed in vacuum at a residual pressure P < 0.13 Pa. Epitaxial CdTe films with the sphalerite cubic structure, oriented parallel to the substrate by the (111) plane, grow on substrates annealed in air at a temperature of 1000°C or more and having a system of smooth terraces and steps on the surface. For ZnO films with a wurtzite hexagonal structure obtained by magnetron sputtering, a similar correlation between the structural quality and the regime of treatment of sapphire substrates is observed. It is shown that thermal annealing of (0001) sapphire plates in air is the optimal way of substrate preparation for growing epitaxial ZnO films with the base orientation. The obtained epitaxial CdTe films contain a certain amount of structural defects (mosaicity and twins), while the epitaixal ZnO films treated in the same way are close to perfect.

Sapphire evolution of the vicinal (0001) sapphire surface upon annealing in air

The evolution of a terrace-step nanostructure (TSN) on the sapphire (0001) surface misoriented by an angle of 0.1° with respect to the (

Structural contribution to the roughness of supersmooth crystal surface

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Effects of the mechanoactivation treatment on the structure of ZnO–Zn cermet mixture

) plane was observed by atomic force microscopy (AFM) at temperatures from 1273 to 1673 K. It was established that, with an increase in the annealing temperature to 1373 K, the step height attains 0.44 nm at a distance of 220 nm between steps; i.e., heating by 100 K doubles these parameters. In this case, the relief periodicity is retained. Rapid cooling of the substrate to 973 K leads to partial freezing of the surface structure, which makes it possible to observe the transition from one TSN to another. It was established that two steps coalescence upon annealing to 1373 K toward the (

Real structure of the ZnO epitaxial films on (0001) leucosapphire substrates coated by ultrathin gold layers

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