V. M. Kanevsky

Sapphire evolution of the vicinal (0001) sapphire surface upon annealing in air

The evolution of a terrace-step nanostructure (TSN) on the sapphire (0001) surface misoriented by an angle of 0.1° with respect to the (

Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

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Real structure of the ZnO epitaxial films on (0001) leucosapphire substrates coated by ultrathin gold layers

) plane was observed by atomic force microscopy (AFM) at temperatures from 1273 to 1673 K. It was established that, with an increase in the annealing temperature to 1373 K, the step height attains 0.44 nm at a distance of 220 nm between steps; i.e., heating by 100 K doubles these parameters. In this case, the relief periodicity is retained. Rapid cooling of the substrate to 973 K leads to partial freezing of the surface structure, which makes it possible to observe the transition from one TSN to another. It was established that two steps coalescence upon annealing to 1373 K toward the (

Scanning tunneling microscopy of the atomically smooth (001) surface of vanadium pentoxide V2O5 crystals

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Vapor phase epitaxy of CdTe on sapphire substrates in dependence on the vapor-flow orientation

) plane, which has the lowest rigidity and, consequently, the lowest atomic density. The coalescence of two steps at a specified temperature is completed at a sufficiently large distance between the steps, at which their interaction energy is negligible. Upon further annealing of the samples above 1373 K, the steps overgrow to 1 nm; however, their periodicity is broken in this case.

Sapphire substrates with a regular surface relief

Technological advances in processing crystals (Si, sapphire α-Al2O3, SiC, GaN, LiNbO3, SrTiO3, etc.) of substrate materials and X-ray optics elements make it possible to obtain supersmooth surfaces with a periodicity characteristic of the crystal structure. These periodic structures are formed by atomically smooth terraces and steps of nano- and subnanometer sizes, respectively. A model surface with such nanostructures is proposed, and the relations between its roughness parameters and the height of atomic steps are determined. The roughness parameters calculated from these relations almost coincide with the experimental atomic force microscopy (AFM) data obtained from 1 × 1 and 10 × 10 μm areas on the surface of sapphire plates with steps. The minimum roughness parameters for vicinal crystal surfaces, which are due to the structural contribution, are calculated based on the approach proposed. A comparative analysis of the relief and roughness parameters of sapphire plate surfaces with different degrees of polishing is performed. A size effect is established: the relief height distribution changes from stochastic to regular with a decrease in the surface roughness.