A. E. Pestov
Russian Academy of Sciences
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Featured researches published by A. E. Pestov.
Technical Physics | 2010
S.S. Andreev; M. M. Barysheva; N. I. Chkhalo; S. A. Gusev; A. E. Pestov; V. N. Polkovnikov; D. N. Rogachev; N. N. Salashchenko; Yu. A. Vainer
Multilayer X-ray mirrors that are based on La/B4C and La/B9C and intended for the reflection of X-ray radiation in the spectral region near λ = 6.7 nm are prepared and studied. Reflection coefficients at a level of 40–60% are achieved for mirrors with various periods. The difference in the interlayer roughnesses reconstructed from the data measured in the hard and soft X-ray spectral regions is explained using a structural model with an asymmetric permittivity profile in a mirror period. A proximate technique is developed to estimate the permittivity profile in a multilayer-structure period using reflectometry data. The effect of antidiffusion Sn, Cr, and Mo barriers on the reflection coefficient of multilayer La/B4C structures is studied experimentally
Proceedings of SPIE, the International Society for Optical Engineering | 2008
M.S. Bibishkin; N. I. Chkhalo; S. A. Gusev; E. B. Kluenkov; A. Ya. Lopatin; V. I. Luchin; A. E. Pestov; N. N. Salashchenko; L. A. Shmaenok; N. N. Tsybin
The technique for fabrication of thin film filters with high mechanical strength, capable of withstanding the prolonged heat load of 1 W/cm2, has been developed. Freestanding multilayer Zr/Si filters of size 20×150 mm2 with high transparency of 76% at wavelength λ = 13 nm were manufactured for EUV lithography tool. We have also developed and fabricated various designs of filters (freestanding or mesh supported) with lower transparency of 40-50% for experiments with intensive EUV sources. The tests of differential pressure withstandability and heat-resistance of filter samples were fulfilled. In order to model the influence on the filter of intensive radiation of the lithography source we have tested Zr/Si film samples by the Joule heating in vacuum at residual pressure of 10-8 Torr. The testing consisted in continuous heating of Zr/Si films at the electrical power per area unit from 0.5 W/cm2 to 6 W/cm2 during long period of time (up to 2 months). The influence of the long-term heat load on the transparency of samples at λ = 13 nm and within wavelength region 0.3 - 2 μm was investigated.
Optics Express | 2014
N. I. Chkhalo; S. A. Churin; A. E. Pestov; N. N. Salashchenko; Yu. A. Vainer; M. V. Zorina
The main problems and the approach used by the authors for roughness metrology of super-smooth surfaces designed for diffraction-quality X-ray mirrors are discussed. The limitations of white light interferometry and the adequacy of the method of atomic force microscopy for surface roughness measurements in a wide range of spatial frequencies are shown and the results of the studies of the effect of etching by argon and xenon ions on the surface roughness of fused quartz and optical ceramics, Zerodur, ULE and Sitall, are given. Substrates of fused quartz and ULE with the roughness, satisfying the requirements of diffraction-quality optics intended for working in the spectral range below 10 nm, are made.
Micro- and nanoelectronics. Conference | 2004
M. S. Bibishkin; D. P. Chekhonadskih; N. I. Chkhalo; E. B. Kluyenkov; A. E. Pestov; Nikolai N. Salashchenko; L. A. Shmaenok; I. G. Zabrodin; S. Yu. Zuev
In the paper, we report development of two reflectometers in IPM RAS. One enables investigation of the angular and spectral characteristics of mirrors with any shape of a reflecting surface in the 0.6-20 nm spectral range. The other, designed especially to study the influence of EUV sources on the reflecting characteristics of the mirrors, allows testing of flat samples. Owing to a high aperture ratio (solid angle of 0.034 steradian), high reflection coefficient of mirrors, powerful windowless X-ray tube, and effective detector, the reflectometer provides a resolution of the reflection coefficient variation at a level of 0.1%.
Bulletin of The Russian Academy of Sciences: Physics | 2011
M. M. Barysheva; Yu. A. Vainer; B. A. Gribkov; M. V. Zorina; A. E. Pestov; D. N. Rogachev; N. N. Salashchenko; N. I. Chkhalo
The abilities of standard methods for rough surface investigation are analyzed in case of supersmooth substrates for multilayered X-ray optics. The X-ray specular reflection technique is shown to be the most adequate one. X-ray diffuse scattering and AFM can be applied only in a case of PSD-function calculation and approximation over the entire spectrum range of spatial frequencies.
Bulletin of The Russian Academy of Sciences: Physics | 2011
D. G. Volgunov; I. G. Zabrodin; B. A. Zakalov; I. A. Kas’kov; E. B. Kluenkov; A. E. Pestov; V. N. Polkovnikov; N. N. Salashchenko; L. A. Suslov; M. N. Toropov; N. I. Chkhalo
An original stand for a nanolithographer-multiplicator with an operating wavelength of 13.5 nm and a design spatial resolution of 30 nm has been developed in Russia at the Institute for Physics of Microstructures, Russian Academy of Sciences. A detailed description of basic principles and approaches used when constructing the stand and its key elements is given. The experiments planned to be performed using the stand are discussed.
Applied Optics | 2016
N. I. Chkhalo; S. A. Churin; M. S. Mikhaylenko; A. E. Pestov; V. N. Polkovnikov; N. N. Salashchenko; M. V. Zorina
We have studied the surface treatment of polished fused silica by neutralized Ar ions with energy of 500-1500 eV and incidence angles of 0-90°. We found the following regularities: for samples that passed the standard procedure of deep polishing (initial effective roughness σ(eff)∼0.5 nm), the effective roughness decreases to the ultrasmooth level (i.e., σ(eff)∼0.25 nm in the range of spatial frequencies q∈[4.9×10(-2)-63] μm(-1)). The effect begins to be noticeable at the material removal of 150 nm and reaches saturation at depths of removal greater than 1 μm. For supersmooth samples (σ(eff)<0.3 nm), the effective roughness keeps the initial level at material removal down to tens of micrometers. The optimal ion energy range is 800-1300 eV (maximum smoothing effect); at higher energy some surface roughness degradation is observed. All the smoothing effects are observed at the incidence angle range θ(in)=0-35°. Increasing the ion energy above 1300 eV increases the etching rate by up to 4 μm per hour (J(ion)=0.8 mA/cm2), which allows for deep aspherization of sized substrates. The technique allows for manufacturing the optical elements for extreme ultraviolet and soft x-ray wavelength ranges with a numerical aperture of up to 0.6.
Applied Optics | 2016
N. I. Chkhalo; I. V. Malyshev; A. E. Pestov; V. N. Polkovnikov; N. N. Salashchenko; M. N. Toropov; Alexander A. Soloviev
Problems in the application of a null lens for surface shape measurements of aspherical mirrors are discussed using the example of manufacturing an aspherical concave mirror for the beyond extreme ultraviolet nanolithographer. A method for allowing measurement of the surface shape of a sample under study and the aberration of a null lens simultaneously, and for evaluating measurement accuracy, is described. Using this method, we made a mirror with an aspheric surface of the 6th order (i.e., the maximum deviation from the best-fit sphere is 6.6 μm) with the parameters of the deviations from the designed surface PV=5.3 nm and RMS=0.8 nm. An approximation of the surface shape was carried out using Zernike polynomials {Z(n)(m)(r,φ),m+n≤36}. The physical limitations of this technique are analyzed. It is shown that for aspheric measurements to an Angstrom accuracy, one needs to have a null lens with errors of less than 1 nm. For accurate measurements, it is necessary to establish compliance with the coordinates on the sample and on the interferogram.
Bulletin of The Russian Academy of Sciences: Physics | 2012
M. M. Barysheva; Yu. A. Vainer; B. A. Gribkov; M. V. Zorina; A. E. Pestov; N. N. Salashchenko; R. A. Khramkov; N. I. Chkhalo
The behavior of roughness on surfaces of Cr/Sc multilayer structure, crystalline silicon [100], and fused quartz upon ion beam etching in the region of middle and high frequencies of the spatial spectrum (10−2–102 μm−1) is studied. The possibility of keeping surface roughness at level σ ∼ 0.3 nm upon etching by Ar atoms/ions to depths of up to 10 μm is demonstrated.
Bulletin of The Russian Academy of Sciences: Physics | 2011
Yu. A. Vainer; M. V. Zorina; A. E. Pestov; N. N. Salashchenko; N. I. Chkhalo; R. A. Khramkov
The effect of ion-beam etching on surfaces of Cr/Sc multilayer structures and amorphous quartz roughness is studied. The dependence of roughness on the depth of etching, incidence angle, and ion energy is considered. Optimal parameters of etching which provide minimal evolution of surface roughness are presented.