A. G. Cullis

Microscopy of Semiconducting Materials 1985

High resolution microscopy and microanalysis self-organized and quantum domain structures epitaxy - growth phenomena epitaxy - wind band-gap nitrides processed silicon, substrates and dielectrics metalization silicides amd contacts device studies and specimen preparation scanning probe microscopy advanced scanning electron and optical microscopy.

The nature of defocus fringes in scanning-transmission electron microscope images

Experimental observations have been made of the fringe contrast which appears at the terminating edges of thin objects in defocused, scanning‐transmission electron micrographs. In general only a single bright fringe is present and the displacement and width of this fringe was found to vary linearly with defocus, indicating the contrast does not result from simple‐Fresnel diffraction. A model for this contrast, based on the refraction of incident electrons by the object edge, is shown to explain the observed results.