A. Karcher

Functional characteristics and radiation tolerance of AToM, the front-end chip of BaBar silicon vertex tracker

The readout chip designed to process the microstrip signals in the BaBar silicon vertex tracker (SVT), after being realized twice in a radsoft technology has been transferred into the final radhard process. So far the circuit has gone through four different radhard submissions, one aiming at providing a preliminary insight into the characteristics of the radhard chip, the other ones constituting pre-production and production runs. Chips from these submissions have undergone a thorough set of tests addressing functional aspects, noise parameters and effects of radiation on signal and noise behavior. The present paper discusses the results of these tests and describes the final version of the circuit which has been proven to successfully meet the experiment requirements.

Measurement of CP-violating asymmetries in B0decays to CP Eigenstates

We present measurements of time-dependent CP-violating asymmetries in neutral B decays to several CP eigenstates. The measurement uses a data sample of 23x10(6) Upsilon(4S)-->BbarB decays collected by the BABAR detector at the PEP-II asymmetric B Factory at SLAC. In this sample, we find events in which one neutral B meson is fully reconstructed in a CP eigenstate containing charmonium and the flavor of the other neutral B meson is determined from its decay products. The amplitude of the CP-violating asymmetry, which in the standard model is proportional to sin2beta, is derived from the decay time distributions in such events. The result is sin2beta = 0.34+/-0.20 (stat)+/-0.05 (syst).