S. Dow

A time-over-threshold machine: the readout integrated circuit for the BABAR Silicon Vertex Tracker

A low-noise, mixed-signal, 128-channel CMOS integrated circuit containing the complete readout electronics for the BABAR Silicon Vertex Tracker has been developed. The outstanding feature of the present implementation is the ability to perform simultaneously low-level signal acquisition, derandomizing data storage, sparsification and data transmission on a single monolithic chip. The signals from the detector strips are amplified, shaped by a CR-RC/sup 2/ filter with digitally selectable peaking time of 100 ns, 200 ns, 300 ns, or 400 ns, and then presented to a time-over-threshold processor to implement a compression type analog-to-digital conversion. The digital information is stored, sparsified and read out through a serial link upon receipt of a command. The digital section operates from a 60 MHz incoming clock. Noise measurements at 200 ns peaking time and 3.5 mW total power dissipation per channel yield an equivalent noise charge of 600 el. rms at 12 pF added source capacitance. The chip measures 5.7 mm/spl times/8.3 mm and contains 330 k transistors. The first full-scale prototype was fabricated in a radiation soft 0.8 /spl mu/m, 3-metal CMOS process. The same circuit is now being fabricated in an analogous radiation hard technology.

Functional characteristics and radiation tolerance of AToM, the front-end chip of BaBar silicon vertex tracker

The readout chip designed to process the microstrip signals in the BaBar silicon vertex tracker (SVT), after being realized twice in a radsoft technology has been transferred into the final radhard process. So far the circuit has gone through four different radhard submissions, one aiming at providing a preliminary insight into the characteristics of the radhard chip, the other ones constituting pre-production and production runs. Chips from these submissions have undergone a thorough set of tests addressing functional aspects, noise parameters and effects of radiation on signal and noise behavior. The present paper discusses the results of these tests and describes the final version of the circuit which has been proven to successfully meet the experiment requirements.

The BaBaR drift chamber project

The BaBar Drift Chamber is now under construction. We review its design, the progress in the construction of the components, the plan for assembly and stringing and we present test results obtained with a prototype exposed at SLAC to cosmic rays. We also report on projected dE/dx performance from beam tests done with a chamber with a different cell design.

Measurement of CP-violating asymmetries in B0decays to CP Eigenstates

We present measurements of time-dependent CP-violating asymmetries in neutral B decays to several CP eigenstates. The measurement uses a data sample of 23x10(6) Upsilon(4S)-->BbarB decays collected by the BABAR detector at the PEP-II asymmetric B Factory at SLAC. In this sample, we find events in which one neutral B meson is fully reconstructed in a CP eigenstate containing charmonium and the flavor of the other neutral B meson is determined from its decay products. The amplitude of the CP-violating asymmetry, which in the standard model is proportional to sin2beta, is derived from the decay time distributions in such events. The result is sin2beta = 0.34+/-0.20 (stat)+/-0.05 (syst).

The BaBar drift chamber project

The BaBar Drift Chamber is now under construction. We review its design, the progress in the construction of the components, the plan for assembly and stringing and we present test results obtained with a prototype exposed at SLAC to cosmic rays. We also report on projected dE/dx performance from beam tests done with a chamber with a different cell design.