A. McCollam

Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination.

K·p subband structure of the LaAIO3/SrTiO3 interface

Heterostructures made of transition metal oxides are new tailor-made materials which are attracting much attention. We have constructed a 6-band k.p Hamiltonian and used it within the envelope function method to calculate the subband structure of a variety of LaAlO3/SrTiO3 heterostructures. By use of density functional calculations, we determine the k.p parameters describing the conduction band edge of SrTiO3: the three effective mass parameters, L=0.6104 eV AA^2, M=9.73 eV AA^2, N=-1.616 eV AA^2, the spin orbit splitting Delta_SO=28.5 meV and the low temperature tetragonal distortion energy splitting Delta_T=2.1 meV. For confined systems we find strongly anisotropic non-parabolic subbands. As an application we calculate bands, density of states and magnetic energy levels and compare the results to Shubnikov-de Haas quantum oscillations observed in high magnetic fields. For typical heterostructures we find that electric field strength at the interface of F = 0.1 meV/AA for a carrier density of 7.2 10^{12} cm^-2 results in a subband structure that is similar to experimental results.

Thermally excited multiband conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering

Magnetotransport measurements of charge carriers at the interface of a LaAlO 3 /SrTiO 3 heterostructure with 26 unit cells of LaAlO 3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel of electronlike charge carriers. At intermediate temperatures, we observe nonlinear Hall resistance and positive magnetoresistance, establishing the presence of at least two electronlike channels with significantly different mobilities and carrier concentrations. These channels are separated by 6 meV in energy and their temperature-dependent occupation and mobilities are responsible for the observed transport properties of the interface. We observe that one of the channels has a mobility that decreases with decreasing temperature, consistent with magnetic scattering in this channel.

Theoretical models of rashba spin splitting in asymmetric SrTiO3-based heterostructures

Rashba spin splitting in two-dimensional (2D) semiconductor systems is generally calculated in a

Anomalous Hall effect in Weyl semimetal half-Heusler compounds RPtBi (R = Gd and Nd)

{\bf k} \cdot {\bf p}

Observation of chiral magneto-transport in RPtBi topological Heusler compounds

Luttinger-Kohn approach where the spin splitting due to asymmetry emerges naturally from the bulk band structure. In recent years, several new classes of 2D systems have been discovered where electronic correlations are believed to have an important role. In these correlated systems, the effects of asymmetry leading to Rashba splitting have typically been treated phenomenologically. We compare these two approaches for the case of 2D electron systems in SrTiO

High-field Magnetization Response as Evidence for Dominant Ferromagnetic Kitaev Correlations in the Alkali Iridate Na 2 IrO 3

_3

The influence of nuclear-electronic order on quantum criticality in antiferroquadrupolar PrOs 4 Sb 12

-based heterostructures, and find that the two models produce fundamentally different behavior in regions of the Brillouin zone that are particularly relevant for magnetotransport. Our results demonstrate the importance of identifying the correct approach in the quantitative interpretation of experimental data, and are likely to be relevant to a range of 2D systems in correlated materials.

Phase transition from a composite fermion liquid to a Wigner solid in the lowest Landau level of ZnO

Significance GdPtBi and NdPtBi belong to the Heusler family of compounds and are conventional antiferromagnets below 9 and 2.1 K, respectively. We present evidence for magnetic-field–induced Weyl physics in these compounds, namely, a chiral anomaly (negative magnetoresistance) and an anomalous Hall effect (AHE) with a large anomalous Hall angle over a wide range of temperature. The AHE and chiral anomaly have a similar temperature dependence, indicating their common origin. These studies plus band structure calculations reveal that GdPtBi and NdPtBi develop Weyl points in the presence of an external magnetic field that arises from an exchange field. Our observations open the path to the realization of the quantum AHE in antiferromagnetic Heusler thin films. Topological materials ranging from topological insulators to Weyl and Dirac semimetals form one of the most exciting current fields in condensed-matter research. Many half-Heusler compounds, RPtBi (R = rare earth), have been theoretically predicted to be topological semimetals. Among various topological attributes envisaged in RPtBi, topological surface states, chiral anomaly, and planar Hall effect have been observed experimentally. Here, we report an unusual intrinsic anomalous Hall effect (AHE) in the antiferromagnetic Heusler Weyl semimetal compounds GdPtBi and NdPtBi that is observed over a wide temperature range. In particular, GdPtBi exhibits an anomalous Hall conductivity of up to 60 Ω−1⋅cm−1 and an anomalous Hall angle as large as 23%. Muon spin-resonance (μSR) studies of GdPtBi indicate a sharp antiferromagnetic transition (TN) at 9 K without any noticeable magnetic correlations above TN. Our studies indicate that Weyl points in these half-Heuslers are induced by a magnetic field via exchange splitting of the electronic bands at or near the Fermi energy, which is the source of the chiral anomaly and the AHE.