U. Zeitler

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occurs on a truly macroscopic scale, has attracted intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE has been observed only at liquid-helium temperatures. We show that in graphene, in a single atomic layer of carbon, the QHE can be measured reliably even at room temperature, which makes possible QHE resistance standards becoming available to a broader community, outside a few national institutions.

Magnetic effects at the interface between non-magnetic oxides

The electronic reconstruction at the interface between two insulating oxides can give rise to a highly conductive interface. Here we show how, in analogy to this remarkable interface-induced conductivity, magnetism can be induced at the interface between the otherwise non-magnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida interactions, the Kondo effect and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise non-magnetic materials.

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V-1 s-1 and 104 cm2 V-1 s-1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayers mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

Nanolithography and manipulation of graphene using an atomic force microscope

We use an atomic force microscope (AFM) to manipulate graphene films on a nanoscopic length scale. By means of local anodic oxidation with an AFM we are able to structure isolating trenches into single-layer and few-layer graphene flakes, opening the possibility of tabletop graphene based device fabrication. Trench sizes of less than 30 nm in width are attainable with this technique. Besides oxidation we also show the influence of mechanical peeling and scratching with an AFM of few layer graphene sheets placed on different substrates.

Josephson supercurrent through a topological insulator surface state

The long-sought yet elusive Majorana fermion is predicted to arise from a combination of a superconductor and a topological insulator. An essential step in the hunt for this emergent particle is the unequivocal observation of supercurrent in a topological phase. Here, direct evidence for Josephson supercurrents in superconductor (Nb)-topological insulator (Bi(2)Te(3))-superconductor electron-beam fabricated junctions is provided by the observation of clear Shapiro steps under microwave irradiation, and a Fraunhofer-type dependence of the critical current on magnetic field. Shubnikov-de Haas oscillations in magnetic fields up to 30 T reveal a topologically non-trivial two-dimensional surface state. This surface state is attributed to mediate the ballistic Josephson current despite the fact that the normal state transport is dominated by diffusive bulk conductivity. The lateral Nb-Bi(2)Te(3)-Nb junctions hence provide prospects for the realization of devices supporting Majorana fermions.

Dissipative Quantum Hall Effect in Graphene near the Dirac Point

We report on the unusual nature of the nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counterpropagating edge states. Such states, intrinsic to massless Dirac quasiparticles, manifest themselves in a large longitudinal resistivity rho(xx) > or approximately h/e(2), in striking contrast to rho(xx) behavior in the standard QHE. The nu=0 state in graphene is also predicted to exhibit pronounced fluctuations in rho(xy) and rho(xx) and a smeared zero Hall plateau in sigma(xy), in agreement with experiment. The existence of gapless edge states puts stringent constraints on possible theoretical models of the nu=0 state.

Interaction phenomena in graphene seen through quantum capacitance

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron–electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.

Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2

The peculiar band structure of semimetals exhibiting Dirac and Weyl crossings can lead to spectacular electronic properties such as large mobilities accompanied by extremely high magnetoresistance. In particular, two closely neighboring Weyl points of the same chirality are protected from annihilation by structural distortions or defects, thereby significantly reducing the scattering probability between them. Here we present the electronic properties of the transition metal diphosphides, WP2 and MoP2, which are type-II Weyl semimetals with robust Weyl points by transport, angle resolved photoemission spectroscopy and first principles calculations. Our single crystals of WP2 display an extremely low residual low-temperature resistivity of 3 nΩ cm accompanied by an enormous and highly anisotropic magnetoresistance above 200 million % at 63 T and 2.5 K. We observe a large suppression of charge carrier backscattering in WP2 from transport measurements. These properties are likely a consequence of the novel Weyl fermions expressed in this compound.Semimetals with the band structure exhibiting Dirac and Weyl crossings can show special electronic and magnetic properties. Here the authors explore the electronic properties of the type-II Weyl semimetals, MoP2 and WP2 with robust Weyl points which display very high magnetoresistance and conductivity.

Tuning of the size of Dy2O3 nanoparticles for optimal performance as an MRI contrast agent.

The transverse 1H relaxivities of aqueous colloidal solutions of dextran coated Dy2O3 nanoparticles of different sizes were investigated at magnetic field strengths (B) between 7 and 17.6 T. The particle size with the maximum relaxivity (r2) appears to vary between 70 nm at 7 T (r2 approximately = 190 s(-1) mM(-1)) and 60 nm at 17.6 T (r2 approximately = 675 s(-1) mM(-1)). A small difference between r2 and r2* was observed, which was ascribed to the effect of the dextran coating. The value of r2 is proportional to B2 up to 12 T after which it saturates. Independent magnetization measurements on these particles at room temperature at magnetic field strengths up to 30 T, however, show a typical paramagnetic behavior with a magnetization of the particle that is proportional to the field strength. The saturation in the curve of r2 as a function of B2 was tentatively explained by the presence of an extremely fast relaxing component of the signal at high field strengths, which is not observable on the NMR time scale. The results of this study can be exploited for the rational design of MRI contrast agents, based on lanthanide oxide particles, with high efficiencies at magnetic field strengths of more than 1.5 T.

Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias

Rational material design can accelerate the discovery of materials with improved functionalities. This approach can be implemented in Heusler compounds with tunable magnetic sublattices to demonstrate unprecedented magnetic properties. Here, we have designed a family of Heusler alloys with a compensated ferrimagnetic state. In the vicinity of the compensation composition in Mn-Pt-Ga, a giant exchange bias (EB) of more than 3 T and a large coercivity are established. The large exchange anisotropy originates from the exchange interaction between the compensated host and ferrimagnetic clusters that arise from intrinsic anti-site disorder. Our design approach is also demonstrated on a second material with a magnetic transition above room temperature, Mn-Fe-Ga, exemplifying the universality of the concept and the feasibility of room-temperature applications. These findings may lead to the development of magneto-electronic devices and rare-earth-free exchange-biased hard magnets, where the second quadrant magnetization can be stabilized by the exchange bias.