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Featured researches published by A.P. Potylitsin.
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 1987
Yu.N. Adishchev; A.N. Didenko; V.V. Mun; G.A. Pleshkov; A.P. Potylitsin; V. K. Tomchakov; S. R. Uglov; S.A. Vorobiev
Abstract Spectral and angular distributions of parametric X-rays have been measured for (200–900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.
Radiation Effects and Defects in Solids | 1982
Yu. N. Adishchev; A.N. Didenko; V. N. Zabaev; B. N. Kalinin; A. A. Kurkov; A.P. Potylitsin; V. K. Tomchakov; A. S. Vorobiev
Abstract The transformation of the spectral distributions of gamma-radiation for channeled electrons with the energy Eo = 870 MeV in diamond crystal of 0.35 mm thickness was experimentally investigated. The present results distinctly show the ranges of orientation angles of the crystal target at which the effect of coherent bremsstrahlung or the channeling radiation is mainly displayed. The procedure of the crystal orientation and the experimental technique are described.
Physics Letters A | 1980
Yu.N. Adishchev; V.V. Kaplin; A.P. Potylitsin; S.A. Vorobiev
Abstract The spectral dependence of the γ-radiation produced by channeled electrons of different energies, E = 600, 750 and 900 MeV in 0.35 mm thick diamond was measured with a NaI(Tl) photon spectrometer. The energy dependences of the basic spectral features of the channeling radiation were determined.
Physics Letters A | 1981
Yu.N. Adishchev; A.N. Didenko; V.V. Kaplin; A.P. Potylitsin; S.A. Vorobiev
Abstract γ-ray spectra have been measured for (110) and (111) planar channeling of 600–900 MeV electrons in a diamond crystal. It is shown that in the case of (111) crystallographic planes the influence of molecular-type motion on the formation of the spectra is predominant.
Physics Letters A | 1990
Yu.N. Adishchev; V.V. Kaplin; A.P. Potylitsin; S. R. Uglov; S.A. Vorobiev; R.D. Babadzhanov; V.A. Verzilov
Abstract The orientation dependences and angular distributions of parametric X-rays emitted by 900 MeV electrons in (111) Ge crystal near the Bragg angle τB = 9° have been measured. The effect of the Kα absorption edge on the spectral yield of PX emission was observed.
Physics Letters A | 1986
A.N. Didenko; Yu.N. Adishchev; B. N. Kalinin; A.P. Potylitsin; S.A. Vorobiev; V.V. Mun; S. Pak
Abstract The angular distributions and energy dependence of the yield of parametric X-ray radiation for 150→900 MeV electrons transmitting through a diamond crystal have been measured. The number of 10 keV photons recorded by a collimated detector decreases quickly for electron energies E 0 ≲300MeV. The angular distribution of this radiation shows two separate maxima.
Radiation Effects and Defects in Solids | 1985
I. E. Vnukov; V. N. Zabaev; B. N. Kalinin; A. A. Kurkov; A.P. Potylitsin; S. A. Vorobiev
Abstract Decrease of the hard part of the gamma-radiation spectra for 900 MeV electrons transmitted along the crystallographic axes of silicon and diamond, tungsten, diamond and (100) planes of tungsten crystals, has been observed experimentally. Collimation of the measured gamma-radiation beam was θc = 0.6 mrad ≈ 1/γ.
Physics Letters A | 1981
Yu.N. Adishchev; V.V. Kaplin; D.E. Popov; A.P. Potylitsin; E.I. Rozum; S.A. Vorobiev
Abstract Measurements of the channeling radiation of 4.9 MeV electrons in Si and KCl crystals are presented. For the first time the orientational maxima of the radiation yield in the X-ray and optical spectral regions are obtained.
Radiation Effects and Defects in Solids | 1993
Yu. N. Adishchev; A.P. Potylitsin; V.A. Verzilov
Abstract The characteristics of the parametric X-rays from 900 MeV electrons in Ge near the K absorption edge have been measured. The effect of absorption on radiation yield has been investigated.
Radiation Effects and Defects in Solids | 1993
B. N. Kalinin; G. A. Naumenko; A.P. Potylitsin; V. Stibunov; I. E. Vnukov
Abstract Channeling radiation has been used for excitation of the 15.1 MeV resonance gamma level of a 12C nucleus. Multiplicity effects occuring during radiation emission from (100) silicon crystal at 900 MeV electron incidence were considered.