A. Piana

Electroluminescence and transport properties in amorphous silicon nanostructures

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed.

Timing Performances of Large Area Silicon Photomultipliers Fabricated at STMicroelectronics

In this paper the results of charge and timing resolution characterization realized at Fermi National Accelerator Laboratory (Fermilab) on 3.5 × 3.5 mm2 Silicon PhotoMultipliers fabricated at STMicroelectronics Catania R&D clean room facilities are presented. The device consists of 4900 microcells and has a geometrical fill factor of 36%. Timing measurements were realized at different wavelengths by varying the overvoltage and the temperature applied to the photodetector. The results shown in this manuscript demonstrate that the device, in spite of its large area, exhibits relevant features in terms of low dark current density, fast timing and very good single photoelectron resolution. All these characteristics can be considered very appealing in view of the utilization of this technology in applications requiring detectors with high timing and energy resolution performances.

Photonic-crystal silicon-nanocluster light-emitting device

We report on enhanced light extraction from a light-emitting device based on amorphous silicon nanoclusters, suitable for very-large-scale integration, and operating at room temperature. Standard low-cost optical lithography is employed to fabricate a two-dimensional photonic crystal onto the device. We measured a vertical emission with the extracted radiation enhanced by over a factor of 4, without the aid of any buried reflector. These achievements demonstrate that a cost-effective exploitation of photonic crystals is indeed within the reach of semiconductor industry and open the way to a new generation of nanostructured silicon devices in which photonic and electronic functions are integrated together.

Electro-Optical Performances of p-on-n and n-on-p Silicon Photomultipliers

Silicon photomultipliers (SiPMs) are fabricated in two different configurations: p-on-n and n-on-p junctions. p-on-n SiPMs turn out to be more suitable for application in positron emission tomography (PET), due to their higher sensitivity in blue wavelength range where common PET scintillators have their emission spectrum. In this paper, we report on the electro-optical performances of the first p-on-n SiPMs manufactured at STMicroelectronics, Catania. The results obtained on these devices are compared with those measured on the standard n-on-p technology.

A large area cosmic ray detector for the inspection of hidden high-Z materials inside containers

Traditional inspection methods are of limited use to detect the presence of fissile (U, Pu) samples inside containers. To overcome such limitations, prototypes of detection systems based on cosmic muon scattering from high-Z materials are being tested worldwide. This technique does not introduce additional radiation levels, and each event contributes to the tomographic image, since the scattering process is sensitive to the charge of the atomic nuclei being traversed. A new Project, started by the Muon Portal Collaboration, plans to build a large area muon detector able to reconstruct muon tracks with good spatial and angular resolution. Experimental tests of the individual detection modules are already in progress. The design and operational parameters of the muon portal under construction are here described, together with the preliminary simulation and test results. Due to the large acceptance of the detector for cosmic rays, coupled to the good angular reconstruction of the muon tracks, it is also planned to employ such detector for cosmic ray studies, complementing its detection capabilities with a set of trigger detectors located some distance apart, in order to measure multiple muon events associated to extensive air showers.

Design and development of a fNIRS system prototype based on SiPM detectors

Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board with 16 SiPMs and 4 couples of LEDs each operating at two wavelengths. An ARM based microcontroller has been joined with a multiplexing interface, able to control power supply for the LEDs and collect data from the SiPMs in a time-sharing fashion and with configurable temporal slots. The system will be validated by using a phantom made by materials of different scattering and absorption indices layered to mimic a human head. A preliminary characterization of the optical properties of the single material composing the phantom has been performed using the SiPM in the diffuse radial reflectance measurement technique. The first obtained results confirm the high sensitivity of such kind of detector in the detection of weak light signal even at large distance between the light source and the detector.

Design of a large area tomograph to search for high-Z materials inside containers by cosmic muons

In recent years the need to have a better control of potentially dangerous materials across the borders has raised the opportunity to search for alternative detection techniques. In particular, to detect the presence of hidden high-Z materials inside containers, traditional techniques based on X-rays or neutron scattering are of limited use, and prototypes of detection systems based on cosmic muon scattering from high-Z materials are being tested worldwide to overcome these limitations. The use of this method is particularly suited to this aim, since it does not introduce additional radiation levels to the already existing natural dose. Since the technique is based on the scattering process of muons and not on their absorption, each event may in principle contribute to produce the tomographic image. A new Project has recently started by the Muon Portal Collaboration, which plans to build a large area muon detector, able to reconstruct muon tracks with good spatial and angular resolution. The design and operational parameters of the tomograph under construction are here described, together with preliminary simulation and test results of the individual detection modules. Due to the large acceptance of the detector for cosmic rays, coupled to the good angular reconstruction of the muon tracks, it is also planned to employ such detector in the future for cosmic ray studies, complementing its detection capabilities with a set of trigger detectors located some distance apart, in order to measure multiple muon events associated to extensive air showers.

The Muon Portal Project: Development of an innovative scanning portal based on muon tomography

The Muon Portal is a recent Project [1] which aims at the construction of a 18 m2 tracking detector for cosmic muons. This apparatus has been designed as a real-size prototype to inspect containers using the muon tomography technique, i.e. by measuring the deflection of muons when traversing high-Z materials. The detection setup is based on eight position-sensitive X-Y planes, four placed below and four above the volume to be inspected, with good tracking capabilities for charged particles. The detection planes are segmented into strips of extruded plastic scintillators with WLS fibres to transport the light produced in the scintillator material to the photo-sensors (SiPMs) at one of the fibre ends. Detailed GEANT4 simulations have been carried out under different scenarios to investigate the response of the apparatus. The tomographic images are reconstructed by tracking algorithms and suitable imaging software tools. Simulations have demonstrated the possibility to reconstruct a 3D image of the volume to be inspected in a reasonable amount of time, compatible with the requirement of a fast inspection technique. The first two of the 48 detection modules are presently under construction.

Enhanced blue-light sensitivity P on N Silicon Photomultipliers

Silicon Photomultipliers (SiPMs) have known a fast development in recent years, due to their excellent single photon detection capability and very fast timing response. In this paper we present the results of the electro-optical characterization performed on the first STMicroelectronics P on N SiPMs prototypes properly designed for their possible application in Positron Emission Tomography (PET). We will show that the performances of the new devices are extremely promising in terms of high photon detection efficiency and fast timing response in blue wavelength range.

Timing performance comparison of P-on-N and N-on-P silicon photomultipliers

We have investigated the timing performance of P-on-N and N-on-P silicon photomultipliers (SiPM) in light of their use in time-of-flight (TOF) positron emission tomography (PET) detectors. Polished 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm LYSO:Ce scintillators were coupled to STmicroelectronics P-on-N and N-on-P SiPMs. The SiPMs were read out with low-noise RF transimpedance amplifiers and fed to a waveform digitizer for offline time pickoff analysis. For the P-on-N devices coincidence resolving times (CRTs) of 234 ps and 189 ps FWHM were obtained with the 3 mm × 3 mm × 20 mm and 3 mm × 3 mm × 5 mm crystals, respectively. For the Non-P devices CRTs of 280 ps and 214 ps FWHM, respectively, were obtained with above crystal types. The P-on-N devices are promising for TOF-PET due to their high photon detection efficiency (PDE) and low transit time spread (TTS).