Alessia Irrera

Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals

In this article the luminescence properties of Si nanocrystals (nc) formed by plasma enhanced chemical vapor deposition and their interaction with Er ions introduced by ion implantation are investigated in detail. Si nc with different size distributions and densities were produced and all show quite intense room temperature luminescence (PL) in the range 700–1100 nm. It is shown that the time-decay of the luminescence follows a stretched exponential function whose shape tends towards a single exponential for almost isolated nc. This suggests that stretched exponential decays are related to the energy transfer from smaller towards larger nc. Indeed, by comparing samples with similar nc size distributions, but with very different nc densities, it is demonstrated that the PL has a quite strong redshift in the high density case, demonstrating a clear energy redistribution within the sample. Excitation cross sections have been measured in all samples yielding a value of ∼1.8×10−16 cm2 for isolated nc excited w...

Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices

The electroluminescence (EL) properties of Er-doped Si nanoclusters (NC) embedded in metal–oxide–semiconductor devices are investigated. Due to the presence of Si NC dispersed in the SiO2 matrix, an efficient carrier injection occurs and Er is excited, producing an intense 1.54 μm room temperature EL. The EL properties as a function of the current density, temperature, and time have been studied in detail. We have also estimated the excitation cross section for Er under electrical pumping, finding a value of ∼1×10−14 cm2. This value is two orders of magnitude higher than the effective excitation cross section of Er ions through Si NC under optical pumping. In fact, quantum efficiencies of ∼1% are obtained at room temperature in these devices.

Excitation and de-excitation properties of silicon quantum dots under electrical pumping

In this work, the stationary and time-resolved electroluminescence (EL) properties of Si quantum dots embedded within a metal–oxide–semiconductor device are investigated. In particular, we measured the excitation cross section of Si nanocrystals under electrical pumping, finding a value of 4.7×10−14 cm2 which is two orders of magnitude higher with respect to the excitation cross section under 488 nm optical pumping. We also studied the radiative and nonradiative decay processes occurring in these devices by measuring the time evolution of the EL signal. We demonstrate that the mechanism responsible for the emission is the same under both electrical and optical pumping. The overall quantum efficiency of the electrical pumping is estimated to be two orders of magnitude higher than the quantum efficiency for optical pumping in all the studied temperature ranges.

Re-radiation Enhancement in Polarized Surface-Enhanced Resonant Raman Scattering of Randomly Oriented Molecules on Self-Organized Gold Nanowires

We explore the effect of re-radiation in surface-enhanced Raman scattering (SERS) through polarization-sensitive experiments on self-organized gold nanowires on which randomly oriented Methylene Blue molecules are adsorbed. We provide the exact laws ruling the polarized, unpolarized, and parallel- and cross-polarized SERS intensity as a function of the field polarizations. We show that SERS is polarized along the wire-to-wire nanocavity axis, independently from the excitation polarization. This proves the selective enhancement of the Raman dipole component parallel to the nanocavity at the single molecule level. Introducing a field enhancement tensor to account for the anisotropic polarization response of the nanowires, we work out a model that correctly predicts the experimental results for any excitation/detection polarization and goes beyond the E(4) approximation. We also show how polarization-sensitive SERS experiments permit one to evaluate independently the excitation and the re-radiation enhancement factors accessing the orientation-averaged non-diagonal components of the molecular Raman polarizability tensor.

Silicon nanocrystal formation in annealed silicon-rich silicon oxide films prepared by plasma enhanced chemical vapor deposition

Silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition with different total Si contents (from 39to46at.%) have been annealed at increasing temperature (up to 1250°C) in order to study the Si nanocrystal (Si-nc) nucleation as well as the structural changes induced in the amorphous embedding matrix. The comparison between x-ray absorption measurements in total electron yield mode, Raman spectroscopy, and photoluminescence spectra allowed us to gain insight about the Si nanocrystal formation, while the chemical composition and the nature of chemical bonds into the oxidized matrix was studied by Fourier transform infrared spectroscopy. A comprehensive picture of the nucleation process has been obtained, demonstrating the active role played by the hydrogen and nitrogen atoms in the formation of Si-nc and in the thermally induced evolution of the deposited films.

Electroluminescence and transport properties in amorphous silicon nanostructures

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed.

Direct evidence of light confinement and emission enhancement in active silicon-on-insulator slot waveguides

The authors experimentally demonstrate strong light confinement and enhancement of emission at 1.54μm in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er3+ doped Si nanoclusters. Angle-resolved attenuated total reflectance is used to excite the slab guided modes, giving a direct evidence of the strong confinement of the electric field in the low-index active material for the fundamental transverse-magnetic mode. By measuring the guided photoluminescence from the cleaved-edge of the sample, the authors observe a more than fivefold enhancement of emission for the transverse-magnetic mode over the transverse-electric one. These results show that Si-based slot waveguides could be important as starting templates for the realization of Si-compatible active optical devices.

Erbium-doped Si nanocrystals: optical properties and electroluminescent devices

Abstract In the last decade, a strong effort has been devoted towards the achievement of efficient light emission from silicon. Among the different approaches, rare-earth doping and quantum confinement in Si nanostructures have shown great potentialities. In the present work, the synthesis and properties of low-dimensional silicon structures in SiO 2 will be analyzed. All of these structures present a strong room temperature optical emission, tunable in the visible by changing the crystal size. Moreover, Si nanocrystals (nc) embedded in SiO 2 together with Er ions show a strong coupling with the rare earth. Indeed each Si nc absorbs energy which is then preferentially transferred to the nearby Er ions. The signature of this interaction is the strong increase of the excitation cross section for an Er ion in the presence of Si nc with respect to a pure oxide host. We will show the properties of Er-doped Si nc embedded within Si/SiO 2 Fabry–Perot microcavities. Very narrow, intense and highly directional luminescence peaks can be obtained. Moreover, the electroluminescence (EL) properties of Si nc and Er-doped Si nc in MOS devices are investigated. It is shown that an efficient carrier injection at low voltages and quite intense room temperature EL signals can be achieved, due to the sensitizing action of Si nc for the rare earth. These data will be presented and the impact on future applications discussed.

Size-scaling in optical trapping of silicon nanowires.

We investigate size-scaling in optical trapping of ultrathin silicon nanowires showing how length regulates their Brownian dynamics, optical forces, and torques. Force and torque constants are measured on nanowires of different lengths through correlation function analysis of their tracking signals. Results are compared with a full electromagnetic theory of optical trapping developed in the transition matrix framework, finding good agreement.

Electroluminescence properties of light emitting devices based on silicon nanocrystals

Abstract We have fabricated MOS devices where the dielectric layer consists of a substoichiometric SiO x (x thin film, annealed at 1100°C for 1 h to induce the separation of the Si and SiO 2 phases, with the formation of silicon nanocrystals (nc) embedded in the insulating matrix. We have studied the electroluminescence (EL) properties of such devices as a function of the current density and of the temperature. We have evaluated the excitation cross section of Si nc under electrical pumping at room temperature and at low temperature (12 K ) . Moreover, we have used the experimental EL intensities and decay times to evaluate the radiative rate as a function of the temperature.