A. Santarelli

Comparison of electron device models based on operation-specific metrics

In the context of the European Union TARGET Network of Excellence (NoE) a specific interest has been oriented to the comparison of different electron device models in order to choose the most suitable for a particular application (e.g. highly linear amplifiers, low phase noise oscillators). To this purpose different metrics have been defined to compare the models behavior under different operating conditions (i.e. dc, ac small-and large-signal). In this paper we apply different metrics proposed under the TARGET NoE in order to compare two models, the nonlinear discrete convolution (NDC) model, based on a table-based black-box approach, and the EEHEMT1 model, based on the classic equivalent circuit approach. The goal is to provide a set of practical criteria for carrying on reliable model comparisons.

A new technique for thermal resistance measurement in power electron devices

A simple technique is proposed for the thermal resistance measurement of electron devices. The new approach is based on the standard measurements which are normally carried out for the electrical characterization of power devices, without requiring special-purpose instrumentation and/or physics-based temperature-dependent electrical device models. Experimental results, which confirm the validity of the new method, are provided.

Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System

In this paper, an automated laboratory setup for the characterization of microwave and millimeter-wave electron devices under dc small- and large-signal operations is described, which is based on a generalized technology-independent bias system. The biasing parameters adopted, which are a linear combination between currents and voltages at the device ports, allow for a complete characterization of the desired empirical data (e.g., multifrequency S-matrix) throughout all the regions, in which the quiescent operation of the device can be conventionally divided without any need for switching between the different biasing strategies. The lookup tables of the experimental data obtained, which are carried out homogeneously versus the same couple of bias parameters of the quiescent regions investigated independently, are particularly suitable for the characterization of the empirical nonlinear dynamic models for the electron device

Critical issues in highly-linear power amplifier design

A recently proposed technique for the design of power amplifiers is here improved and specifically tailored for the application in the field of highly-linear PAs, such as those required by modern high-capacity digital radio links. The proposed design procedure is aimed at providing minimum intermodulation distortion in the presence of hard constraints of minimum guaranteed output power and gain. The proposed algorithm can be efficiently exploited both in conjunction with a highly accurate nonlinear device model, obtaining a numerically efficient design procedure completely CAD-based, or alternatively, as a performance-driven controlling strategy for experimental source-load pull setups. The description of the algorithm also gives the opportunity of revising critical issues concerning both design and electron device modeling aspects related to high-linearity PAs.