A. T. Hindmarch

Origin of in-plane uniaxial magnetic anisotropy in CoFeB amorphous ferromagnetic thin films

Describing the origin of uniaxial magnetic anisotropy (UMA) is generally problematic in systems other than single crystals. We demonstrate an in-plane UMA in amorphous CoFeB films on GaAs(001) which has the expected symmetry of the interface anisotropy in ferromagnetic films on GaAs(001), but strength which is independent of, rather than in inverse proportion to, the film thickness. We show that this volume UMA is consistent with a bond-orientational anisotropy, which propagates the interface-induced UMA through the thickness of the amorphous film. It is explained how, in general, this mechanism may describe the origin of in-plane UMAs in amorphous ferromagnetic films.

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe81Ga19 is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain.

Magnetostrictive thin films for microwave spintronics

Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

Fe diffusion, oxidation, and reduction at the CoFeB/MgO interface studied by soft x-ray absorption spectroscopy and magnetic circular dichroism

We have studied the effect of annealing on the interface magnetization in a CoFeB/MgO structure which models the lower electrode in a magnetic tunnel junction device. We find that MgO deposition causes Fe to diffuse toward the CoFeB/MgO interface, where it preferentially bonds with oxygen to form a Fe-O-rich interfacial region with reduced magnetization. After annealing at 375 °C the compositional inhomogeneity remains; Fe is reduced back to a ferromagnetic metallic state and the full interfacial magnetization is regained.

Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven ferromagnetic resonance technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, was analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the sum of the field-like torque and Oersted torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers.

Local control of magnetic damping in ferromagnetic/non-magnetic bilayers by interfacial intermixing induced by focused ion-beam irradiation

The influence of interfacial intermixing on the picosecond magnetization dynamics of ferromagnetic/non-magnetic thin-film bilayers was studied. Low-dose focused-ion-beam irradiation was used to induce intermixing across the interface between a 10 nm Ni 81Fe19 layer and a 2–3 nm capping layer of either Au or Cr. Time-resolved magneto-optical Kerr effect was used to study magnetization dynamics as a function of ion-beam dose. With an Au cap, the damping of the un-irradiated bilayer was comparable with native Ni 81Fe19 and increased with increasing ion dose. In contrast, for Ni 81Fe19/Cr the damping was higher than that for native Ni 81Fe19, but the damping decreased with increasing dose.

Time-domain detection of current controlled magnetization damping in Pt/Ni81Fe19 bilayer and determination of Pt spin Hall angle.

The effect of spin torque from the spin Hall effect in Pt/Ni81Fe19 rectangular bilayer film was investigated using time-resolved magneto-optical Kerr microscopy. Current flow through the stack resulted in a linear variation of effective damping up to ±7%, attributed to spin current injection from the Pt into the Ni 81Fe19. The spin Hall angle of Pt was estimated as 0.11 ± 0.03. The modulation of the damping depended on the angle between the current and the bias magnetic field. These results demonstrate the importance of optical detection of precessional magnetization dynamics for studying spin transfer torque due to spin Hall effect.

Tunable Magnetization Dynamics in Interfacially Modified Ni81Fe19/Pt Bilayer Thin Film Microstructures

Interface modification for control of ultrafast magnetic properties using low-dose focused ion beam irradiation is demonstrated for bilayers of two technologically important materials: Ni81Fe19 and Pt. Magnetization dynamics were studied using an all-optical time-resolved magneto-optical Kerr microscopy method. Magnetization relaxation, precession, damping and the spatial coherence of magnetization dynamics were studied. Magnetization precession was fitted with a single-mode damped sinusoid to extract the Gilbert damping parameter. A systematic study of the damping parameter and frequency as a function of irradiation dose varying from 0 to 3.3 pC/μm2 shows a complex dependence upon ion beam dose. This is interpreted in terms of both intrinsic effects and extrinsic two-magnon scattering effects resulting from the expansion of the interfacial region and the creation of a compositionally graded alloy. The results suggest a new direction for the control of precessional magnetization dynamics, and open the opportunity to optimize high-speed magnetic devices.

Evidence for boron diffusion into sub-stoichiometric MgO (001) barriers in CoFeB/MgO- based magnetic tunnel junctions

Evidence of boron diffusion into the MgO barrier of a CoFeB/MgO based magnetic tunnel junction has been identified using analytical scanning transmission electron microscopy (STEM) and X-ray photoelectron spectroscopy. Structures were deposited by DC/RF-magnetron sputtering, where defective, sub-stoichiometric MgO barriers degrading device performance have been previously mitigated against by deposition of thin Mg layers prior to MgO deposition. We show that despite the protection offered by the Mg layer, disorder in the MgO barrier is still evident by STEM analysis and is a consequence of the oxidation of the Co40Fe40B20 surface during MgO deposition. Evidence of boron diffusion from CoFeB into the MgO barrier in the as-deposited and annealed structure is also presented, which in the as-deposited case we suggest results from the defective structures at the barrier interfaces. Annealing at 375 °C results in the presence of B in the trigonal coordination of [BO3]3− in the MgO barrier and partial crystallization of the top electrode (we presume there is also some boron diffusion into the Ta capping layer). The bottom electrode, however, fails to crystallize and much of the boron is retained in this thicker electrode. A higher annealing temperature or lower initial boron content is required to crystallize the bottom electrode.

Enhanced inverse spin-Hall effect in ultrathin ferromagnetic/normal metal bilayers

We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distinguished via their angular dependence. The spin-pumping voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and motivates a theory modelling the dependence of impurity scattering on surface roughness.