A. W. Rushforth

Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that

Electrical switching of an antiferromagnet

{T}_{c}

Achieving high Curie temperature in (Ga,Mn)As

in high-quality metallic samples increases linearly with the number of uncompensated local moments on

Character of states near the Fermi level in (Ga,Mn)as : Impurity to valence band crossover

{\mathrm{Mn}}_{\mathrm{Ga}}

Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As.

acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistent with the picture in which Mn impurities incorporated during growth at interstitial

Voltage control of magnetocrystalline anisotropy in ferromagnetic-semiconductor-piezoelectric hybrid structures

{\mathrm{Mn}}_{\mathrm{I}}

Origin of in-plane uniaxial magnetic anisotropy in CoFeB amorphous ferromagnetic thin films

positions act as double-donors and compensate neighboring

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

{\mathrm{Mn}}_{\mathrm{Ga}}

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

local moments because of strong near-neighbor

Anisotropic Magnetoresistance Components in (Ga,Mn)As

{\mathrm{Mn}}_{\mathrm{Ga}}{\mathrm{Mn}}_{\mathrm{I}}