A. V. Osadchuk

The chaos oscillator with inertial non-linearity based on a transistor structure with negative resistance

In the paper the results of theoretical and experimental researches of the chaos oscillator with inertial non-linearity based on a bipolar transistor structure with negative resistance are given. The dynamic processes in such oscillator are shown to be described with the Anishchenko-Astakhov mathematical model. Numerical simulation results are confirmed with experimental data.

Radiomeasuring microelectronic transducers of physical quantities

A method of constructing radiomeasuring microelectronic transducers of physical quantities on the basis of thermoreactive, photoreactive, magneticreactive and tenzoreaktive effects in sensitive bipolar and field effect transistor elements that served as the basis of creation of radiomeasuring transducers with frequency output, microelectronic manufacturing technology and improved metrology and economic indicators.

Modeling of the Gate Junction in GaAs MESFETs

A low-signal equivalent circuit of a GaAs MESFET is suggested. In this circuit, the gate junction is represented so that a potential variation along the channel can be taken into account. A relationship between the gate current and the gate-source and drain-source voltages is found

Frequency transducer of the pressure on the basis of reactive properties of transistor structure with negative resistance

The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector tenzosensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental researches have shown, that sensitivity of the transducer makes 1,55-1,10 kHz /kPa.

UHF Self-Oscillator with Electric Control Based on Complementary Transistor Structure

Discussion is presented of a UHF self-oscillator based on a transistor structure. A possibility of wide-range electric adjustment for oscillation frequency generation is shown. A hybrid IC is suggested for a UHF self-oscillator based on a complementary transistor structure. Research has shown that oscillation frequency may be adjusted using control voltage, which offers a 68.5 MHz oscillation frequency tuning.

Experimental research and simulation of microwave oscillator based on structure of static inductance transistor with negative resistance

The experimental research of characteristics of the microwave oscillator based on the structure of static inductance transistor has been carried out and the model of its static and dynamic current-voltage characteristics has been improved. The results of the experimental research show that oscillating frequency changes from 770 to 900MHz, amplitude of generate oscillations changes from 5 to 22 V, average power of oscillations is 96mW, coefficient of efficiency is 80-85% when supply voltage variation is from 9 to 30 V. Calculation of characteristics by means of the simplified charge model of the structure of static inductance transistor gives quite accurate description of characteristics of the active element of the oscillator.

Radiomeasurement Transducer to Magnetic Induction with Frequency Output

In given work are presented investigations radio measurement transducer to magnetic induction on base reactive characteristic bipolar transistor. The analytical dependencies function of converting and equation of sensitivity are obtained. Theoretical and experimental investigations have shown that sensitivity designed radio measurement of the transducer of a magnetic induction forms 1,4 -2,8 kHz/mT.

Temperature transducer based on metal-pyroelectric-semiconductor structure with negative differential resistance

The paper analyses modern development status of temperature transducer on the basis of piroelectrics, represents and describes a new temperature transducer on the basis of transistor structure with negative differential resistance, simulates current-voltage and frequency characteristic of this device in the software environment Pspice.

Microelectronic frequency transducers of magnetic field with Hall elements

The analysis is carried out and the possibility of creation of microelectronic auto generator transducers of magnetic field on the basis of transistor structures with a negative resistance is shown. Characteristics of microelectronic auto generator transducers of magnetic field with Halls elements with the broad range of frequencies from 103 to 107 Hz are offered and investigated, at the same time the sensitivity of devices changes from 103 kHz/mT up to 105 kHz/mT.

Frequency magnetic transducers on base of bipolar transistors structure

In this paper we propose a new method for constructing the magnetic field of frequency transducers based on magnetically effect in bipolar transistors. Circuits of the magnetic field of frequency transducers on the single and the two-collectors bipolar transistors have been offered, which sensitivity is here from 0.5 to 7 kHz/mT.