A. V. Vizir

Multiple ionization of metal ions by ECR heating of electrons in vacuum arc plasmas

A joint research and development effort has been initiated, whose ultimate goal is the enhancement of the mean ion charge states in vacuum arc metal plasmas by a combination of a vacuum arc discharge and electron cyclotron resonance (ECR) heating. Metal plasma was generated by a special vacuum arc mini-gun. Plasma was pumped by high frequency gyrotron-generated microwave radiation. The results have demonstrated substantial multiple ionization of metal ions. For a lead plasma, ECR heating increased the maximum attainable ion charge state from Pb2+ up to Pb6+. The confinement parameter was as high as ∼109 cm−3 s. Further increase of the ion charge states will be attained by increasing the vacuum arc plasma density and optimizing the ECR heating conditions.

Low-pressure hollow-cathode glow discharge plasma for broad beam gaseous ion source

We have developed a hollow-cathode glow discharge plasma for a dc broad beam ion source. For a broad beam ion source, it is hard to obtain adequate pressure drop between the discharge space and the extraction region. The high-current low-voltage mode of discharge is limited to a pressure about 10−3 Torr, but for stable extraction of ions without breakdown the pressure needs to be at least one order of magnitude lower. To decrease the limited operation pressure for the high-current mode of the hollow-cathode glow, an external electron beam was used. These electrons were generated in a “keep-alive” discharge and are accelerated in the cathode layer of the primary discharge. In this way we successfully decreased the operation pressure to 10−4–3×10−5 Torr, as well as reaching a value of the discharge voltage as low as 80 V. The characteristics of this discharge system are presented, and the influence of external electrons on the discharge parameters is discussed.

Current status of plasma emission electronics: II. Hardware

This paper is devoted to the engineering embodiment of the modern methods for producing charged ion and electron beams by extracting them from the plasma of a discharge. Electron beams use to execute electron-beam welding, annealing, and surface heating of materials and to realize plasmochemical reactions stimulated by fast electrons. Ion beams allow realization of technologies of ion implantation or ion-assisted deposition of coatings thereby opening new prospects for the creation of compounds and alloys by the method that makes it possible to obtain desired parameters and functional properties of the surface. A detailed description is given to the performance and design of devices producing beams of this type: the ion and electron sources being developed at the laboratory of plasma sources of the Institute of High-Current Electronics of the Russian Academy of Sciences and the laboratory of plasma electronics of Tomsk State University of Control Systems and Radioelectronics.

Boron ion source based on planar magnetron discharge in self-sputtering mode.

An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For a boron sputtering target, high target temperature is required because boron has low electrical conductivity at room temperature, increasing with temperature. The target is well-insulated thermally and can be heated by an initial low-current, high-voltage discharge mode. A discharge power of 16 W was adequate to attain the required surface temperature (400 degrees C), followed by transition of the discharge to a high-current, low-voltage mode for which the magnetron enters a self-sputtering operational mode. Beam analysis was performed with a time-of-flight system; the maximum boron ion fraction in the beam is greater than 99%, and the mean boron ion fraction, time-integrated over the whole pulse length, is about 95%. We have plans to make the ion source steady state and test with a bending magnet. This kind of boron ion source could be competitive to conventional boron ion sources that utilize compounds such as BF(3), and could be useful for semiconductor industry application.

Small plasma source for materials application

We describe a small hollow-cathode plasma source suitable for small-scale materials synthesis and modification application. The supporting electrical system is minimal. The gaseous plasma source delivers a plasma ion current of up to about 1 mA. Here we outline the source construction and operation, and present some of its basic performance characteristics.

Further development of a gaseous ion source based on low-pressure hollow cathode glow

The gaseous ion source based on a hollow cathode glow discharge with additional external injection of electron beam described in a previous publication has undergone further development. The direction of the source upgrade was to increase the total beam current and its density keeping the same broad beam cross section (about 100 cm2). With an operating gas pressure of 10−4 Torr, the maximum stable discharge current was as high as 40 A in 300 μs (pulsed mode) and about 10 A (dc mode) without discharge gap arc breakdown. The total ion emission current exceeded 1 A in both cases. The geometry of the discharge gap was optimized, allowing improvement of the parameters of the device. The composition of the ion beam under various operating conditions of the discharge has been measured using the time-of-flight method. The electron beam injection into the hollow cathode of the ion source resulted in a reduction of the discharge voltage from the usual 500–600 V to 100 V or less. This lead to lower sputtering and as...

Gridless, very low energy, high-current, gaseous ion source

We have made and tested a very low energy gaseous ion source in which the plasma is established by a gaseous discharge with electron injection in an axially diverging magnetic field. A constricted arc with hidden cathode spot is used as the electron emitter (first stage of the discharge). The electron flux so formed is filtered by a judiciously shaped electrode to remove macroparticles (cathode debris from the cathode spot) from the cathode material as well as atoms and ions. The anode of the emitter discharge is a mesh, which also serves as cathode of the second stage of the discharge, providing a high electron current that is injected into the magnetic field region where the operating gas is efficiently ionized. In this discharge configuration, an electric field is formed in the ion generation region, accelerating gas ions to energy of several eV in a direction away from the source, without the use of a gridded acceleration system. Our measurements indicate that an argon ion beam is formed with an energy of several eV and current up to 2.5 A. The discharge voltage is kept at less than 20 V, to keep below ion sputtering threshold for cathode material, a feature which along with filtering of the injected electron flow, results in extremely low contamination of the generated ion flow.

Non-self-sustained hollow-cathode glow discharge for large-aperture ion sources

A discharge system is proposed in which an auxiliary gas discharge is used to inject electrons into the cathode cavity of a hollow-cathode glow discharge. A study is made of the region of stable existence of a non-self-sustaining hollow-cathode discharge. It is shown that the injection of electrons permits a reduction to <10−2 Pa in the minimum pressure at which a discharge can exist. It is shown experimentally that this discharge can be used to generate wide-aperture ion beams.

Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%.

Operating modes of a hydrogen ion source based on a hollow-cathode pulsed Penning discharge

An ion source based on a hollow-cathode Penning discharge was switched to a high-current pulsed mode (tens of amperes and tens of microseconds) to produce an intense hydrogen ion beam. With molecular hydrogen (H2), the ion beam contained three species: H(+), H2(+), and H3(+). For all experimental conditions, the fraction of H2 (+) ions in the beam was about 10 ÷ 15% of the total ion beam current and varied little with ion source parameters. At the same time, the ratio of H(+) and H3(+) depended strongly on the discharge current, particularly on its distribution in the gap between the hollow and planar cathodes. Increasing the discharge current increased the H(+) fraction in ion beam. The maximum fraction of H(+) reached 80% of the total ion beam current. Forced redistribution of the discharge current in the cathode gap for increasing the hollow cathode current could greatly increase the H3(+) fraction in the beam. At optimum parameters, the fraction of H3(+) ions reached 60% of the total ion beam current.