C. T. Foxon

Mn Interstitial Diffusion in (Ga, Mn)As

We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements during annealing show that the observed changes are due to out diffusion of Mn interstitials towards the surface, governed by an energy barrier of 0.7-0.8 eV. Electric fields induced by Mn acceptors have a significant effect on the diffusion.

Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that

High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing

{T}_{c}

Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

in high-quality metallic samples increases linearly with the number of uncompensated local moments on

Modeling the spectral response of the quantum well solar cell

{\mathrm{Mn}}_{\mathrm{Ga}}

Achieving high Curie temperature in (Ga,Mn)As

acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistent with the picture in which Mn impurities incorporated during growth at interstitial

Spin Reorientation Transition in Single-Domain (Ga, Mn)As

{\mathrm{Mn}}_{\mathrm{I}}

Character of states near the Fermi level in (Ga,Mn)as : Impurity to valence band crossover

positions act as double-donors and compensate neighboring

Hall effect and hole densities in Ga1−xMnxAs

{\mathrm{Mn}}_{\mathrm{Ga}}

Voltage control of magnetocrystalline anisotropy in ferromagnetic-semiconductor-piezoelectric hybrid structures

local moments because of strong near-neighbor