Aaron Koay Terr Yeow

Bond Strength Comparison between Silicon and Glass Based Surface Using Anodic Bonding

This paper reports on the bond strength comparison between silicon and different glass based materials via anodic bonding approach. The three types of glass based surface used were silica, pyrex, and soda lime glass. Silicon will be placed on the positive terminal and glass based materials will be placed on the negative terminal. Experiments were carried out using an in-house designed anodic bonder and the bond strength were measured using a bond strength tester. The anodic bonding approach process was done in two sets which are before and after the cleaning process for each sample. For every set, there are three different bonding partners, which are silicon with silica, silicon with Pyrex, and silicon with soda lime glass. From the results, it can be seen that almost all samples showed higher bond strength after the cleaning process. Silicon with soda lime glass bonding shows the highest bond strength compared with other materials.

Interaction Relationship Analysis of Surface Roughness on Aluminium Etched Wafer Using RIE

This paper presents the interaction relationships between Tetrafluoromethane (CF4) gas, Oxygen (O2) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive Ion Etching (RIE). The investigation was done using the three factors full factorial design of experiment (DOE). Analysis was done qualitatively by plotting the main interaction plots. The results suggest that strong interactions are present between CF4 and RF power, CF4 and O2, and also O2 and RF power due to the intersection of the graphs. This implies that all three factors have interaction between each other towards the surface roughness on the deposited Aluminium after RIE.

Surface Roughness Analysis on Reactive Ion Etched Aluminium Deposited Wafer

This paper investigates the factors that affect the surface roughness on an Aluminium deposited wafer after reactive ion etching (RIE) using a combination of Tetrafluoromethane (CF4) and Oxygen (O2) gaseous. A total of four controllable process variables, with 16 sets of experiments were scrutinized using an orderly designed design of experiment (DOE). The four variables in the investigation are the composition of CF4 gas, the composition of O2 gas, RF power, and time. The estimate of effect calculated for the composition of CF4 gas, the composition of O2 gas, RF power, and time are-0.9813, -0.7488, -0.0438, and 4.7138 respectively. All factors gave negative effects except for time. This implies that the surface roughness decreases when the content of CF4, O2, and RF power is high. The results indicate that time is the most influential factor compared to the other three factors and is directly proportional to the surface roughness of the etched Aluminium deposited wafer.

Investigation of Surface Roughness on Platinum Deposited Wafer after Reactive Ion Etching Using SF6+Argon Gaseous

This paper investigates the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of SF6 and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-4.9288, -6.2383, and-4.7223 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The Bias Power is the most influential factor followed by ICP Power, and working pressure.

Main Effects Study on Plasma Etched Aluminium Metallization

Main effects contributing to the quality of surface roughness on an etched aluminium metallization wafer using Reactive Ion Etching (RIE) was studied. A total of three controllable process variables, with eight sets of experiments were scrutinized using an orderly designed design of experiment (DOE). The three variables in the investigation are composed of CF4 gas, composed of O2 gas and RF power while time is constant. The estimate of effect calculated for composition of CF4 gas, composition of O2 gas and RF power are-2.205, -0.975, and-0.525 respectively. All factors gave negative effects. This implies that the surface roughness increases when the content of CF4, O2, and RF power is lower. The results suggest that the composition of CF4 gaseous as the most influential factor as its main effects plot has the steepest slope followed by oxygen and RF power.

Surface Roughness and Wettability Correlation on Etched Platinum Using Reactive Ion Ecthing

As the world of semiconductor is moving towards smaller and high-end applications, the quality of the bonding adhesion for wire bonding is very critical. Although aluminium has been the metallization of choice in integrated circuits, it can be easily oxidized during high temperature and pressure. On the other hand, Platinum metallization layer has high thermal coefficient resistance and inert to oxygen. This paper reports the correlation between surface roughness and the wettability in the form of contact angle for Platinum deposited wafer etched using Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). Surface roughness was measured using AFM while contact angle was obtained via droplet test. The results clearly suggested that both surface roughness and wettabily, calculated by its contact angle value has the same trend. Surface roughness is directly proportional to the contact angle. This indicates that surface roughness have great influence on the surface wettability. Therefore, the adhesion for wire bonding process on platinum metallization which can be used in high end applications can be controlled by its surface roughness and wettability.

Surface Roughness Scrutinizaton with RIE CF4+Argon Gaseous on Platinum Deposited Wafer

Aluminium metallization has a disadvantage when it comes to high-end applications as it cannot withstand the high temperature and pressure. This paper studies the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of CF4 and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-6.3608, -3.2858, and-5.394 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The ICP Power is the most influential factor followed by working pressure, and bias power.

Effect of High Temperature during Electroless Nickel Process

This paper presents the correlation between electroless process time, immersion gold process time and the bump height in electroless nickel immersion gold (ENIG). A certain bump height need to be achieved in order to create acceptable solder bumps for reflow process. The study was done using a full factorial design of experiment (DOE). The DOE matrix is made of two levels with two factors. Analysis was done by plotting the main effects plot for each factor. The results suggest that higher process time increases the plating rate where the temperature fixed at 100 °C. It can be concluded that electroless nickel time has more influence to the bump height compared to immersion gold time.

Quantitative Bump Height Analysis in ENIG Using Design of Experiment

Flip chip technology has grown by leaps and bounds and is getting even smaller in size. Optimization of process parameters in manufacturing is eminent due to reliability issues. This paper reports the parameters that affect the quality of the bump height in electroless nickel immersion gold (ENIG) and their relationships between each other. A total of four different combinations of parameters have been carried out for this investigation using the design of experiment (DOE) approach. It can be concluded that higher temperature of electroless nickel permits an increase of bump height where as the increment in immersion gold temperature does not nessasarily affect the value of bump height. All four samples recorded a higher value of bump height than the controlled bump height value. This implies reliability of the solder joint and assembly process robustness can be improved with an increase of bump height by increasing the time.

Wettability and Surface Roughness Study on RIE Treated Aluminium Deposited Surface

Design of Experiment (DOE) is a technique for optimizing process which has controllable inputs and measurable outputs. As a method of DOE, 24 Full Factorial design is used to study the effect of Reactive Ion Etch towards the surface roughness of aluminum pad and effect of the roughness produced towards the contact angle. Surface roughness analysis is done using Atomic Force Microscop (AFM). Contact angle is measured using AutoCad software from the images captured from droplet test. This contact angles must be more than 90° for non-wetting profile or less than 90° for wetting profile. This work is also done to understand the interaction between the process parameters and how each parameters will affect the etch rate. The results are analyzed which shows that the increase in surface roughness produces an increase on the contact angle and vice versa.